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GB2170044A - Semiconductor laser - Google Patents

Semiconductor laser Download PDF

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Publication number
GB2170044A
GB2170044A GB08531215A GB8531215A GB2170044A GB 2170044 A GB2170044 A GB 2170044A GB 08531215 A GB08531215 A GB 08531215A GB 8531215 A GB8531215 A GB 8531215A GB 2170044 A GB2170044 A GB 2170044A
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United Kingdom
Prior art keywords
semiconductor laser
materials
thickness
layer
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08531215A
Other versions
GB8531215D0 (en
GB2170044B (en
Inventor
Toshitami Hara
Yoshinobu Sekiguchi
Seiichi Miyazawa
Hidetoshi Nojiri
Akira Shimizu
Isao Hakamada
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Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB8531215D0 publication Critical patent/GB8531215D0/en
Publication of GB2170044A publication Critical patent/GB2170044A/en
Application granted granted Critical
Publication of GB2170044B publication Critical patent/GB2170044B/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H01S5/2013—MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Description

1 GB 2 170 044 A 1
SPECIFICATION
Semiconductor laser Background of the invention 5
Field of the invention
The present invention relates to a semiconductor laser and, more particularly, to a semiconductor laser having a super lattice structure near an active layer.
Description of the prior art 10
A well-known conventional semiconductor laser using a super lattice of this type has a conduction band having an MQW (Multi-Quantum-Well) structure. Figure 1 shows a conduction band (C13) typically used in such a semiconductor laser. The constituting materials have three bandgaps. Materials 31, 32 and 33 have bandgaps having sized larger in the order of 31, 32 and 33. The material 31 having a largest bandgap in GaAs.AI.Ga,As systems is, e.g., AI.Ga,As (e.g., x = 0.4) having a large value of X. The mate- 15 rial 31 is called a wide gap material with respect to the material 33 (consisting of GaAs) having a minimum bandgap. The material 32 consists of AlGa,.xAs (x 0.2), and is a wide gap material with respect to the material 33.
A layer 34 is an activeloptical confinement layer. In the layer 34, a material (the material 32 in Figure 1) having a wider bandgap is called a 'wide gap material', and a material (the material 33 in Figure 1) having a narrower bandgap is called a 'narrow gap material'. The thickness of the two materials are repre sented by LB and LW, respectively. In the MOW structure, LB is normally about 20 to 40 A, and LW is selected to be 30 to 150 A. A semiconductor layer having such a structure is known to oscillate at a low threshold current.
Figure 2 shows a conduction band (C13) of a semiconductor laser having a similar super lattice struc- 25 ture called GRIN-SCH (Graded-Index Waveguide and Separate Carrier and Optical Confinement Heteros tructure) structure. Materials 41 and 43 respectively have the same compositions as the materials 31 and 32 in Figure 1. When a GaAs.AIGaAs system is used, the material 42 has a composition such that x in AI.Ga,As gradually decreases toward the material or active layer 43. Electrons and holes are recombined mainly in the active layer 43 and emit light. The light emitted by electron-hole recombination is confined 30 in the region of the material 42 mainly by the diffraction effect. Therefore, the structure shown in Figure 2 is considered to have an oscillation threshold current lower than that of the MQW structure. The struc ture in Figure 2 has an active/optical confinement layer 44.
In the above-described conventional semiconductor layer (GRIN-SCH structure, the composition in the optical confinement layer (material 42) must be gradually changed. In order to achieve this, the crucible 35 temperature of a deposition source must be increased/decreased within a short period of time. Tempera ture control for this has been difficult to actually perform.
Summary of the invention
It is an object of the present invention to provide a semiconductor layer wherein an effect equivalent to 40 that obtained with a GRIN-SCH structure can be obtained by controlling only film thickness with a super lattice structure, and variations in film quality are reduced by digitally controlling the film composition, so that yield is improved.
In order to achieve the above object of the present invention, an optical confinement layer in a super lattice structure region is formed such that a wide gap material (thickness LB) and narrow gap material 45 (thickness LW) are alternately stacked, and the value of thickness LB is gradually decreased within the entire region toward an active layer, that is, the value of (LB/LW) gradually decreases toward the active layer.
According to a semiconductor laser having a super lattice structure region with an active layer, the ratio (LB/LW) of the thicknesses of the adjacent wide and narrow gap materials of the super lattice struc- 50 ture region decreases within the entire region toward the active layer.
Brief description of the drawings
Figures 1 and2 show conduction bands of semiconductor lasers having conventional super lattice structures, i.e., the MOW and GRIN-SCH structures; 55 Figure 3 shows a multilayer structure as a characteristic feature of a semiconductor laser according to the present invention; and Figure 4 shows a basic structure of the semiconductor layer shown in Figure 1.
Detailed description of the preferred embodiment 60
The preferred embodiment of the present invention will be described with reference to the accompany ing drawings.
Figure 4 shows the basic structure of a semiconductor layer according to the present invention. Al though the present invention will be described with reference to a semiconductor layer using GaAs.AIGaAs, the present invention is similarly applicable to other semiconductor lasers using other ma- 65 2 GB 2 170 044 A 2 terials such as InGaAsP.Inp.
An n-type (Si-Doped) GaAs layer 22 is grown on an n-type GaAs substrate 21 by the molecular beam epitaxy method. After growing an n-type Al.Gal,As layer 23 to a thickness of 2Lm (x = 0.4), a GaAs layer (thickness LW) 24a and A'0.4Ga,,.,As layer (thickness LB) 24b are alternately grown by the molecular beam epitaxy method to form an active/optical confinement layer 24. A[, Ga, and As deposition sources are 5 arranged in the molecular beam epitaxy apparatus, and the two types of semiconductor layers are formed by opening1closing a shutter arranged at the A[ deposition source. The thickness of the two semi conductor layers are controlled by changing the open/close times of the shutter. Doping in the layer 24b (60 A) is not excuted.
The layer 24a is an active layer and the layer 24b is an optical confinement layer. Subsequently, a p- 10 type (Be-doped) Al.Ga,-,As layer 25 (x = 0.4; 2Lrn thick) and a p-type GaAs layer 26 (0.1 Rm thick) are formed.
Figure 3 shows a stacked state of the super lattice structure, i.e. an active layer 11 and an optical con finement layer 12. The active layer 11 and the optical confinement layer 12 correspond to the layers 24a and 24b in Figure 2. LB and LW are thickness of the wide and narrow gap materials, as has been de- 15 scribed above.
Table 1 shows the stacking procedures from '11' to '1168' for activeloptical confinement layer 24. Proce dures '166' to '329' are reverse procedures to the procedures '11' to '164'. LW is preferably 20 A or less so that injected electrons will not be trapped, and is more preferably 10 A or less. In this embodiment, LW is constant (5 A). However, LW need not be constant and can vary among 7, 6 and 3 A, etc. 20 The requirement for the semiconductor laser of the present invention is as follows. The optical confine ment layer 12 is formed so that the ratio (LB/LW) of the thicknesses LB and LW of the adjacent wide and narrow gap materials in the super lattice structure is gradually decreased toward the center (active layer 11).
In this embodiment, as shown in Table 1, 164 sets of layers (one set is LB + LW) sandwich the active 25 layer 11 (LW = 60 A of "165'). However, the effect of the present invention can be obtained with only about 40 such sets.
With the laser of this embodiment, an Au-Ge electrode was deposited on the side of the n-type GaAs substrate 21 and a Cr-Au electrode was deposited on the side of the p- type GaAs layer 26 to prepare a broad area laser having a size of 400 x 300 lim. When the oscillation threshold current density jth was 30 measured, an excellent value of 250 A/cM2 was obtained. This value is equivalent to the value of jth when the A[ composition was set by precise temperature control to achieve a potential distribution as shown in Figure 2. This means that the laser of the embodiment has levels of potentials of electrons and holes and the optical confinement effect which are equivalent to the GRIN- SCH structure shown in Figure 2. 35 As described above, according to the present invention, the periods of the two types of materials (wide and narrow gap materials) in a super lattice structure region are gradually changed to allow easy control.
Although control is easy, the prepared film can have uniform quality to improve manufacturing yield, and laser oscillation at a low threshold current density can be performed. Table 1 shows the stacking proce dures of the super lattice structure according to the present invention. 40 In the above embodiment, two types of materials are used to obtain a film of uniform quality and con tinuous bandgaps. However, the same effect can be obtained with three or more materials, 3 GB 2 170 044 A 3 TABLE 1
LB (A) Lw (A) LB (A) Lw (A) ill 5 W' 24 5 7 50 31 " 5 3" 5 3T' 23 10 4' 48 33" 5 9' 5 M 22 W 46 35" 5 15 7' 5 36" 21 W 44 37' 5 20 911 5 3W 20 1011 42 39' 5 1111 5 4W 19 25 17 40 41 " 5 1W 5 47 18 30 14" 38 4X 5 15" 5 44" 17 1W 36 4W' 5 35 17' 5 4T' 16 1811 34 47' 5 40 19H 5 4W 15 20" 32 49' 5 21 " 5 W' 14 45 27' 30 51 " 5 2Y 5 5T' 13.5 50 2C 28 5W 5 2W 5 W 13 W' 26 W' 5 55 27' 5 W' 12.5 2W 25 57' 5 60 29' 5 5W 12 4 GB 2 170 044 A 4 TABLE 1 (continued) LB (A) Lw (A) LB (A) Lw (A) 59' 5 8811 8.6 5 6W 11.75 8911 5 61 " 5 9011 8.4 6Z 11.5 9111 5 10 63" 5 97' 8.2 64" 11.25 9W 5 15 69' 5 94!' 8.1 W' 11 95,' 5 67' 5 9W 8.0 20 6W 10.75 97' 5 69' 5 9811 7.9 25 7T 10.5 991f 5 71 " 5 10011 7.8 77' 10.25 10111 5 30 7X 5 102" 7.7 M' 10 1OW 5 35 7W 5 1W 7.6 76" 9.8 1OW 5 77' 5 106" 7.5 40 7W 9.6 107' 5 79' 5 10811 7.4 45 8011 9.4 10911 5 81 " 5 11011 7.3 87' 9.2 11111 5 50 83" 5 112" 7.2 8C 9.0 11X 5 55 85" 5 1W 7.1 8W 8.8 5 60 8T' 5 11W 7.0 GB 2 170 044 A 5 TABLE 1 (continued) LB (A) LW (A) LB (A) LW (A) 117' 5 146' 5.6 5 118" 7.0 147' 5 11911 5 148" 5.4 120" 6.8 149' 5 10 121 " 5 150" 5.4 12T' 6.8 151" 5 15 12X 5 152" 5.4 124" 6.6 15X 5 125" 5 154" 5.2 20 126" 6.6 159' 5 127' 5 156" 5.2 25 128" 6.4 157' 5 129' 5 158" 5.2 130" 6.4 159' 5 13V 5 16W' 5.0 132" 6.2 16V 5 35 13Y 5 162" 5.0 134" 6.2 16X 5 40 135" 5 164u 5.0 136" 6.0 165" 60 137' 5 166" 5.0 45 138" 6.0 167' 5 139' 5 168" 5.0 50 140" 5.8 141" 5 14T' 5.8 55 143" 5 327' 5 14C 5.6 329' 50 60 145" 5 329' 5 6 GB 2 170 044 A 6

Claims (6)

1. A semiconductor laser having a super lattice structure near an active layer, wherein the super lat tice structure consists of at least two types of materials which have different bandgaps, the materials are regularly and alternately arranged, and thickness of adjacent layers of the materials change such that a 5 ratio of the thickness changes within said super lattice structure toward an active layer.
2. A semiconductor laser according to Claim 1, wherein said super lattice structure consists of two materials which have different bandgaps.
3. A semiconductor laser according to Claim 2, wherein a thickness of one of the two layers is con stant. 10
4. A semiconductor laser according to Claim 2, wherein the two types of materials have compositions GaAs and AI.Ga,.As (x 1 0).
5. A semiconductor laser according to Claim 2, wherein a thickness of the material of the two types of materials which has a larger bandgap is gradually decrease toward said active layer in comparison with a thickness of the material having a smaller bandgap. 15
6. A semiconductor laser substantially as herein described with reference to Figure 3 of the accompa nying drawings.
Printed in the UK for HMSO, D8818935, 6186, 7102.
Published by The Patent Office, 25 Southampton Buildings, London, WC2A lAY, from which copies may be obtained.
GB08531215A 1984-12-18 1985-12-18 Semiconductor laser Expired GB2170044B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59265375A JPH0632339B2 (en) 1984-12-18 1984-12-18 Semiconductor laser

Publications (3)

Publication Number Publication Date
GB8531215D0 GB8531215D0 (en) 1986-01-29
GB2170044A true GB2170044A (en) 1986-07-23
GB2170044B GB2170044B (en) 1989-01-11

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Country Status (3)

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US (1) US4794611A (en)
JP (1) JPH0632339B2 (en)
GB (1) GB2170044B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2182492A (en) * 1985-10-24 1987-05-13 Sharp Kk A semiconductor laser device and a method for the production of the same
GB2196789A (en) * 1986-02-19 1988-05-05 Sharp Kk A semiconductor laser device
GB2181299B (en) * 1985-09-30 1989-03-15 Gen Electric Plc Semiconductor devices
EP0547044A3 (en) * 1986-07-25 1993-08-11 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser device

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US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
JPH0750795B2 (en) * 1985-03-28 1995-05-31 キヤノン株式会社 Light emitting element
JPH0666519B2 (en) * 1986-08-14 1994-08-24 東京工業大学長 Superlattice structure
US4908678A (en) * 1986-10-08 1990-03-13 Semiconductor Energy Laboratory Co., Ltd. FET with a super lattice channel
US4914488A (en) * 1987-06-11 1990-04-03 Hitachi, Ltd. Compound semiconductor structure and process for making same
JP2543551B2 (en) * 1987-12-28 1996-10-16 キヤノン株式会社 Semiconductor laser
US4930132A (en) * 1987-12-28 1990-05-29 Canon Kabushiki Kaisha Second harmonic wave generating device having active layer and second harmonic wave generating layer on same substrate
US4974036A (en) * 1988-02-09 1990-11-27 Bell Communications Research, Inc. Semiconductor superlattice heterostructures on nonplanar substrates
JPH01222430A (en) * 1988-03-01 1989-09-05 Fujitsu Ltd Distorted superlattice buffer
US4882734A (en) * 1988-03-09 1989-11-21 Xerox Corporation Quantum well heterostructure lasers with low current density threshold and higher TO values
JPH01241192A (en) * 1988-03-23 1989-09-26 Fujitsu Ltd Semiconductor device
US5033053A (en) * 1989-03-30 1991-07-16 Canon Kabushiki Kaisha Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
US4974044A (en) * 1989-04-21 1990-11-27 At&T Bell Laboratories Devices having asymmetric delta-doping
US4975567A (en) * 1989-06-29 1990-12-04 The United States Of America As Represented By The Secretary Of The Navy Multiband photoconductive detector based on layered semiconductor quantum wells
JPH04291304A (en) * 1991-03-20 1992-10-15 Fujitsu Ltd Optical waveguide and control method for light signal
EP0564915B1 (en) * 1992-03-26 2001-10-04 Canon Kabushiki Kaisha Methods for growing compound semiconductor layers
EP0582986B1 (en) * 1992-08-10 1999-01-20 Canon Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US5600667A (en) * 1993-04-05 1997-02-04 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
US5753545A (en) * 1994-12-01 1998-05-19 Hughes Electronics Corporation Effective constant doping in a graded compositional alloy
JPH11354884A (en) * 1998-06-08 1999-12-24 Sumitomo Electric Ind Ltd Semiconductor laser and method of manufacturing semiconductor laser
US20020114366A1 (en) * 2000-12-26 2002-08-22 Junji Yoshida Semiconductor laser device
US7801194B2 (en) * 2002-07-01 2010-09-21 Sharp Kabushiki Kaisha Semiconductor laser device and optical disk unit using the same
GB2406968B (en) * 2003-10-11 2006-12-06 Intense Photonics Ltd Control of output beam divergence in a semiconductor waveguide device
KR100718129B1 (en) * 2005-06-03 2007-05-14 삼성전자주식회사 III-V group compound compound semiconductor device

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2181299B (en) * 1985-09-30 1989-03-15 Gen Electric Plc Semiconductor devices
GB2182492A (en) * 1985-10-24 1987-05-13 Sharp Kk A semiconductor laser device and a method for the production of the same
GB2182492B (en) * 1985-10-24 1989-04-26 Sharp Kk A semiconductor laser device and a method for the production of same
US4841533A (en) * 1985-10-24 1989-06-20 Sharp Kabushiki Kaisha Semiconductor laser device having a graded index waveguide
GB2196789A (en) * 1986-02-19 1988-05-05 Sharp Kk A semiconductor laser device
US4750183A (en) * 1986-02-19 1988-06-07 Sharp Kabushiki Kaisha Semiconductor laser device
GB2196789B (en) * 1986-02-19 1989-12-20 Sharp Kk A semiconductor laser device
EP0547044A3 (en) * 1986-07-25 1993-08-11 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser device

Also Published As

Publication number Publication date
GB8531215D0 (en) 1986-01-29
GB2170044B (en) 1989-01-11
JPS61144089A (en) 1986-07-01
US4794611A (en) 1988-12-27
JPH0632339B2 (en) 1994-04-27

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