GB2166276A - Liquid crystal display apparatus - Google Patents
Liquid crystal display apparatus Download PDFInfo
- Publication number
- GB2166276A GB2166276A GB08525532A GB8525532A GB2166276A GB 2166276 A GB2166276 A GB 2166276A GB 08525532 A GB08525532 A GB 08525532A GB 8525532 A GB8525532 A GB 8525532A GB 2166276 A GB2166276 A GB 2166276A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- polycrystalline silicon
- liquid crystal
- silicon film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A liquid crystal display apparatus includes a display unit comprising a liquid crystal material 20 which is sealed between a pair of opposing electrodes 2, 18, and a thin-film drive transistor for controlling the voltage applied between the opposing electrodes 2, 18, wherein the drain or source region of the thin-film drive transistor and one of the opposing display electrodes 2 are commonly formed by a polycrystalline silicon film. The source and drain regions may preferably be formed by ion implantation. <IMAGE>
Description
SPECIFICATION
Liquid crystal display apparatus
This invention relates to liquid crystal display apparatus and to methods of making such apparatus.
A previously proposed liquid crystal display apparatus is manufactured by the method shown in
Figures 1A to 11 of the accompanying drawings.
As shown in Figure 1A, a polycrystalline silicon film 2 which has a predetermined shape is formed on a quartz substrate 1 by, for example, a low pressure chemical vapour deposition (LPCVD) method. Then as shown in Figure 1B, the upper surface is thermally oxidized so as to form a silicon dioxide (SiO2) film 3 on the surface of the polycrystalline silicon film 2 and to thin the polycrystalline silicon film 2 to a predetermined desired thickness.
Subsequently, a poly-crystalline silicon film 4 is formed over the entire surface as illustrated.
Then predetermined portions of the polycrystalline silicon film 4 and the SiO2 film 3 are sequentially removed by etching to form a gate insulating film 6 comprising a SiO2 film of a predetermined shape and a gate electrode 7 comprising a polycrystalline silicon film of a predetermined shape as shown in Figure 1C.
As shown in Figure 1D, a phosphor-silicate glass (PSG) film 8 is formed over the entire surface of the structure which is then heat-treated at a temperature of about 10000C so as to diffuse phosphorous (P) atoms which are contained in the PSG film 8 into the polycrystalline silicon film 2 thereby forming n+ type source and drain regions 10 and 11 in which phosphorous atoms are doped to a high concentration.
As shown in Figure 1E, a predetermined portion of the PSG film 8 is selectively removed by etching so as to form openings 8a and 8b. Then aluminium electrodes 12 and 13 are formed through the openings 8a and 8b.
As shown in Figure 1F, a silicon nitride (Si3N4) film 14 which forms an insulating inner layer is formed over the entire surface of the resulting structure using a plasma chemical vapour deposition (CVD) method, and is then etched to form an opening 14a.
As shown in Figure 1G, an indium-tin oxide (ITO) film is deposited over the overall surface of the structure at a temperature of about 300 C by sputtering and is then selectively removed by etching to form a transparent electrode 16 that has a predetermined shape. Subsequently, as shown in Figure 1H, a Si3N4 film 17 which serves as a passivation layer is formed over the entire surface of the structure. Then, as shown in Figure II, liquid crystal material 20 which forms the liquid crystal unit is sealed between the Si3N4 film 17 and an opposing electrode 18 which has been formed on one surface of a glass plate 19, thus completing the liquid crystal display apparatus.
In a liquid crystal display apparatus manufactured by this method, a thin-film transistor (TFT) formed by the gate insulating film 6, the gate electrode 7, and the source and drain regions 10 and 11 serves as a drive transistor. During switching operation of the drive transistor, voltages are applied between the ITO film 16 which is the transparent electrode and the opposing electrode 18 so as to control the light transmissivity of the liquid crystal material 20.
The liquid crystal display of Figure 11 has the following disadvantages. Since the transparent electrode at the side of the drive transistor for applying the voltage to the liquid crystal material 20 comprises the ITO film 16, the step of forming the
TFT and the step of forming the transpatent electrode are required. For this reason, not only the step of depositing the ITO film 16 and the step of forming the pattern in it are required, but also the step of forming the Si3N4fiIm 14 as the insulating inner layer, and the step of forming the opening 14a therein are also required.After forming the
TFT, since the sputtering process for forming the
ITO film 16 and the plasma CVD process for forming the Si3N4 film 17 are performed, the TFT may be damaged during these processes resulting in a decrease in the effective mobility ,uUff or an in- crease in the threshold voltage Vth. Thus, the drive transistor will have poor characteristics.
The TFT used in the above liquid crystal display apparatus is described in "The Japanese Society
Applied Physics" 45th Symposium articles (1984), page 407 and 408, nos. 14p-A4 to 14p-A6. The articles describe a polycrystalline silicon TFT in which transistor characteristics are improved by forming a very thin polycrystalline silicon film; a particle size growth effect and conduction characteristic of a polycrystalline silicon film which is formed so as to very thin by thermo oxidation; and an improvement in transistor characteristics by hydrogenization annealing at a temperature of 400 C after forming a Si3N4 film on a very thin polycrystalline silicon TFT by a plasma CVD method.
According to the present invention there is provided a liquid crystal display apparatus comprising: a display unit comprising a liquid crystal material sealed between a pair of opposing electrodes; and a thin-film drive transistor for controlling a voltage applied between said opposing electrodes; wherein a drain region of said thin-film drive transistor and one of said opposing electrodes connected to said drain region are formed by the same polycrystalline silicon film.
According to the present invention there is also provided a liquid crystal display apparatus comprising: first and second planar opposing electrodes; liquid crystal material sealed between said first and second electrodes; and a thin-film drive transistor for applying a voltage to said first and second electrodes and having a source and a drain; wherein one of said source and drain is integrally formed by a single layer of polycrystalline silicon film which also forms said first electrode.
According to the present invention there is also provided a method of making a liquid crystal display device comprising the steps of: forming a layer of polycrystalline silicon film on a planar insulating translucent substrate; forming a silicon dioxide film on said polycrystalline silicon film; forming a gate electrode for a thin-film transistor on said planar insulating substrate; forming a source electrode for said thin-film transistor on said planar insulating substrate; forming a conducting layer of polycrystalline silicon on said planar insulating substrate which forms a drain electrode for said thin-film transistor and a first planar electrode; forming a second planar electrode on a transparent plate; and sealing said transparent plate and said planar insulating substrate together with liquid crystal material therebetween.
The invention will now be described by way of example with reference to the accompanying drawings, throughout which like parts are referred to by like references, and in which:
Figures 1A to Il are sectional views illustrating the manufacture of a liquid crystal display apparatus;
Figures 2A to 2G are sectional views sequentially illustrating the manufacture of an embodiment of liquid crystal display apparatus according to the present invention; and
Figure 3 is a plan view of the liquid crystal display apparatus of Figure 2G.
As shown in Figure 2A, a polycrystalline silicon film 2 which has a size corresponding to one pixel and has a thickness of 700 x 10~1 m is formed on a quartz substrate 1 by, for example, a LPCVD method. As shown in Figure 3, the polycrystalline silicon film 2 has a substantially rectangular shape and a rectangular notched portion 2b, is formed in a corner of the film 2 and extends perpendicular to a side thereof. A thin-film transistor TFT is formed in a shallow rectangular portion 2a adjacent to the notched portion in a manner to be subsequently described.
As shown in Figure 2B, the structure is thermally oxidized so as to form a SiO2 film 3, and to make the polycrystalline silicon film 2 thinner than 200 x 10-10m. Then a layer of polycrystalline silicon 4 is formed over the structure as illustrated.
Then in a manner similar to that shown in Figures 1B and 1D, a gate insulating film 6 and a gate electrode 7 are formed as shown in Figure 2C.
Then as shown in Figure 2D, a PSG film 8 is formed over the surface and n type source and drain regions 10 and 11 are formed as shown in
Figures 2A to 2D. It is to be noted as shown in Figure 2C that the gate electrode 7 and the gate insulating film 6 are formed to cross the rectangular portion 2a formed in the corner of the polycrystalline silicon film 2.
As shown in Figure 2E, an opening 8a is formed in the PSG film 8 and an aluminium electrode 12 is formed through the opening 8a and connects to the source 10.
As shown in Figure 2F, a passivation film comprising a 5i3N4 film 17 is formed over the surface of the structure of Figure 2E. As shown in Figure 2G, liquid crystal material 20 is sealed between the 5i3N4 film 17 and an opposing electrode 18 which is formed on a glass plate 19 in the manner shown in Figure 11, thus completing a liquid crystal display apparatus which is shown in Figure 2G.
Figure 3 is a plan view of the liquid crystal display apparatus. Figure 2G is a sectional view taken along line A-A of Figure 3. It is to be noted that in
Figure 3 the 5i3N4 film 17, the glass plate 19 and the liquid crystal material 20 are not shown.
In the liquid crystal display apparatus of Figure 2G, the n+ type polycrystalline silicon film 2 having a 200 x 10-10m thickness which constitutes the drain region 11 also serves as the transparent electrode. The very thin polycrystalline silicon film 2 is substantially transparent to light of almost all wavelengths except short wavelengths (blue), which are absorbed.
Since the drain region 11 and the transparent electrode are formed by the common n type polycrystalline silicon film 2, the following advantages are obtained. Firstly, the ITO film 16 illustrated in
Figure 1 G need not be formed as the transparent electrode. Therefore, the 5i3N4 film illustrated in
Figure 1F is also not required to be formed as the insulating inner layer. For this reason, the embodiment described has a simpler structure. As a result, the steps of forming photoresist for forming the ITO film 16 and for forming the opening 15a of the Si3N4 film 14 are omitted. Therefore, the manufacturing steps are simplified.Also, since the ITO film 16 and the 5i3N4 film 14 need not be formed, damage to the TFT due to sputtering or plasma
CVD will be avoided, which results in a TFT having excellent characteristics.
Additional to the above advantages, since the
ITO film is not formed, the heat resistance will be improved and the ratio of the light transmitting area to that of one pixel (the opening ratio) can be increased.
Various modifications are of course possible. For example, oxygen (0), nitrogen (N) and carbon (C) ions can be ion implanted in a portion of the polycrystalline silicon film 2 forming the transparent electrode, or a number of openings can be formed in the polycrystalline silicon film 2 to improve the light transmittance as required. Also, the thickness of the polycrystalline silicon film can be freely selected as required. However, in order to obtain a
TFT with high effective mobility > eff, the thickness preferably falls within the range of 20 to 1000 x 10-10m. The thickness of the polycrystalline silicon 2 can be varied in the transparent electrode portion and in the TFT portion as required.
Also, an insulating transparent substrate such as a glass substrate can be used in place of the quartz substrate 1. When a glass substrate is used, since glass generally has a low melting point, the thickness of the polycrystalline silicon film 2 is not decreased by thermo oxidation and the polycrystalline silicon film 2 having a desired thickness is directly formed preferably by LPCVD which can form a film at low temperatures. Similarly, the source and drain regions 10 and 11 are preferably formed by ion implantation instead of using the
PSG film 8 method. As a further alternative, the source, instead of the drain, may be integral with one of the electrodes.
Claims (14)
1. A liquid crystal display apparatus comprising: a display unit comprising a liquid crystal material sealed between a pair of opposing electrodes; and a thin-film drive transistor for controlling a voltage applied between said opposing electrodes; wherein a drain region of said thin-film drive transistor and one of said opposing electrodes connected to said drain region are formed by the same polycrystalline silicon film.
2. Apparatus according to claim 1 wherein said polycrystalline silicon film is formed on an insulating transparent substrate.
3. Apparatus according to claim 2 wherein said insulating transparent substrate is a quartz substrate.
4. Apparatus according to claim 2 wherein said insulating transparent substrate is a glass substrate.
5. Apparatus according to any one of the preceding claims wherein an impurity doped into said drain region of said thin-film drive transistor is of the same conductivity type as that of an impurity doped into said one of said opposing electrodes.
6. Apparatus according to any one of claims 1 to 4 wherein said polycrystalline silicon film is an n type polycrystalline silicon film in which an n type impurity is droped to a high concentration.
7. Apparatus according to any one of claims 1 to 4 wherein a portion of said polycrystalline silicon film forming said one of said opposing electrodes contains at least one of oxygen, nitrogen and carbon.
8. Apparatus according to any one of the preceding claims wherein a plurality of openings are formed in the portion of said polycrystalline silicon film forming said one of said opposing electrode.
9. Apparatus according to any one of the preceding claims wherein the thickness of said polycrystalline silicon film is in the range 20 to 1000 x 1 0-10m.
10. A liquid crystal display apparatus comprising: first and second planar opposing electrodes; liquid crystal material sealed between said first and second electrodes; and a thin-film drive transistor for applying a voltage to said first and second electrodes and having a source and a drain; wherein one of said source and drain is integrally formed by a single layer of polycrystalline silicon film which also forms said first electrode.
11. Apparatus according to claim 10 wherein said polycrystalline film is attached to a translucent insulating substrate.
12. A method of making a liquid crystal display device comprising the steps of: forming a layer of polycrystalline silicon film on a planar insulating translucent substrate; forming a silicon dioxide film on said polycrystalline silicon film; forming a gate electrode for a thin-film transistor on said planar insulating substrate; forming a source electrode for said thin-film transistor on said planar insulating substrate; forming a conducting layer of polycrystalline silicon on said planar insulating substrate which forms a drain electrode of said thin-film transistor and a first planar electrode; forming a second planar electrode on a transparent plate; and sealing said transparent plate and said planar insulating substrate together with liquid crystal material therebetween.
13. A liquid crystal display apparatus substantially as hereinbefore described with reference to
Figures 2 and 3 of the accompanying drawings.
14. A method of making a liquid crystal display apparatus, the method being substantially as hereinbefore described with reference to Figures 2 and 3 of the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59224770A JPS61102628A (en) | 1984-10-25 | 1984-10-25 | Liquid crystal display device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8525532D0 GB8525532D0 (en) | 1985-11-20 |
| GB2166276A true GB2166276A (en) | 1986-04-30 |
| GB2166276B GB2166276B (en) | 1988-11-09 |
Family
ID=16818946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08525532A Expired GB2166276B (en) | 1984-10-25 | 1985-10-16 | Liquid crystal display apparatus |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS61102628A (en) |
| CN (1) | CN1005170B (en) |
| CA (1) | CA1269161A (en) |
| DE (1) | DE3538065A1 (en) |
| FR (1) | FR2572569B1 (en) |
| GB (1) | GB2166276B (en) |
| NL (1) | NL8502881A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0553847A1 (en) * | 1992-01-31 | 1993-08-04 | Sony Corporation | Substrate having an active element array |
| EP0560531A1 (en) * | 1992-03-11 | 1993-09-15 | Gec-Marconi Limited | Method for manufacturing a liquid crystal display device |
| EP1843194A1 (en) * | 2006-04-06 | 2007-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| US8338865B2 (en) | 2006-05-16 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2661320B2 (en) * | 1990-03-29 | 1997-10-08 | 松下電器産業株式会社 | Manufacturing method of liquid crystal display device |
| TW281786B (en) * | 1993-05-26 | 1996-07-21 | Handotai Energy Kenkyusho Kk | |
| JP3450376B2 (en) * | 1993-06-12 | 2003-09-22 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP2791435B2 (en) * | 1996-12-24 | 1998-08-27 | 株式会社日立製作所 | Liquid crystal display device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2126401A (en) * | 1982-07-12 | 1984-03-21 | Hosiden Electronics Co | Dot-matrix liquid crystal display |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893269A (en) * | 1981-11-30 | 1983-06-02 | Seiko Epson Corp | Active matrix substrate |
-
1984
- 1984-10-25 JP JP59224770A patent/JPS61102628A/en active Granted
-
1985
- 1985-10-09 CA CA000492586A patent/CA1269161A/en not_active Expired
- 1985-10-16 GB GB08525532A patent/GB2166276B/en not_active Expired
- 1985-10-22 NL NL8502881A patent/NL8502881A/en not_active Application Discontinuation
- 1985-10-24 CN CN85108619.5A patent/CN1005170B/en not_active Expired
- 1985-10-25 FR FR858515861A patent/FR2572569B1/en not_active Expired - Lifetime
- 1985-10-25 DE DE19853538065 patent/DE3538065A1/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2126401A (en) * | 1982-07-12 | 1984-03-21 | Hosiden Electronics Co | Dot-matrix liquid crystal display |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0553847A1 (en) * | 1992-01-31 | 1993-08-04 | Sony Corporation | Substrate having an active element array |
| US5349456A (en) * | 1992-01-31 | 1994-09-20 | Sony Corporation | Substrate having an active element array with low hydroxyl and chlorine |
| EP0560531A1 (en) * | 1992-03-11 | 1993-09-15 | Gec-Marconi Limited | Method for manufacturing a liquid crystal display device |
| US11442317B2 (en) | 2006-04-06 | 2022-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| US11921382B2 (en) | 2006-04-06 | 2024-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| US11644720B2 (en) | 2006-04-06 | 2023-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| US10684517B2 (en) | 2006-04-06 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| EP2924498A1 (en) * | 2006-04-06 | 2015-09-30 | Semiconductor Energy Laboratory Co, Ltd. | Liquid crystal desplay device, semiconductor device, and electronic appliance |
| US9207504B2 (en) | 2006-04-06 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| US9213206B2 (en) | 2006-04-06 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| EP1843194A1 (en) * | 2006-04-06 | 2007-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| US9958736B2 (en) | 2006-04-06 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| US11073729B2 (en) | 2006-04-06 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| US9709861B2 (en) | 2006-05-16 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
| US10509271B2 (en) | 2006-05-16 | 2019-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device comprising a semiconductor film having a channel formation region overlapping with a conductive film in a floating state |
| US11061285B2 (en) | 2006-05-16 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device comprising a dogleg-like shaped pixel electrode in a plane view having a plurality of dogleg-like shaped openings and semiconductor device |
| US10001678B2 (en) | 2006-05-16 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
| US11106096B2 (en) | 2006-05-16 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
| US11435626B2 (en) | 2006-05-16 | 2022-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
| US8872182B2 (en) | 2006-05-16 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
| US8841671B2 (en) | 2006-05-16 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
| US11726371B2 (en) | 2006-05-16 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | FFS-mode liquid crystal display device comprising a top-gate transistor and an auxiliary wiring connected to a common electrode in a pixel portion |
| US8338865B2 (en) | 2006-05-16 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1269161A (en) | 1990-05-15 |
| CN1005170B (en) | 1989-09-13 |
| FR2572569B1 (en) | 1991-04-12 |
| NL8502881A (en) | 1986-05-16 |
| GB2166276B (en) | 1988-11-09 |
| JPH0543095B2 (en) | 1993-06-30 |
| DE3538065A1 (en) | 1986-07-10 |
| JPS61102628A (en) | 1986-05-21 |
| FR2572569A1 (en) | 1986-05-02 |
| CN85108619A (en) | 1986-04-10 |
| GB8525532D0 (en) | 1985-11-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19961016 |