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GB2162862B - A method of growing a thin film single crystalline semiconductor - Google Patents

A method of growing a thin film single crystalline semiconductor

Info

Publication number
GB2162862B
GB2162862B GB08518834A GB8518834A GB2162862B GB 2162862 B GB2162862 B GB 2162862B GB 08518834 A GB08518834 A GB 08518834A GB 8518834 A GB8518834 A GB 8518834A GB 2162862 B GB2162862 B GB 2162862B
Authority
GB
United Kingdom
Prior art keywords
growing
thin film
crystalline semiconductor
single crystalline
film single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08518834A
Other versions
GB8518834D0 (en
GB2162862A (en
Inventor
Junichi Nishizawa
Hitoshi Abe
Soubei Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59153977A external-priority patent/JPH0782991B2/en
Priority claimed from JP59153980A external-priority patent/JPH0715884B2/en
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of GB8518834D0 publication Critical patent/GB8518834D0/en
Publication of GB2162862A publication Critical patent/GB2162862A/en
Application granted granted Critical
Publication of GB2162862B publication Critical patent/GB2162862B/en
Priority to US08/077,119 priority Critical patent/US5693139A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H10P14/24—
    • H10P14/271—
    • H10P14/2911—
    • H10P14/3418—
    • H10P14/3421—
    • H10P14/3432—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
GB08518834A 1984-07-26 1985-07-25 A method of growing a thin film single crystalline semiconductor Expired GB2162862B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08/077,119 US5693139A (en) 1984-07-26 1993-06-15 Growth of doped semiconductor monolayers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59153977A JPH0782991B2 (en) 1984-07-26 1984-07-26 Method of growing compound semiconductor single crystal thin film
JP59153980A JPH0715884B2 (en) 1984-07-26 1984-07-26 Selective crystal growth method

Publications (3)

Publication Number Publication Date
GB8518834D0 GB8518834D0 (en) 1985-08-29
GB2162862A GB2162862A (en) 1986-02-12
GB2162862B true GB2162862B (en) 1988-10-19

Family

ID=26482431

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08518834A Expired GB2162862B (en) 1984-07-26 1985-07-25 A method of growing a thin film single crystalline semiconductor

Country Status (3)

Country Link
DE (1) DE3526824A1 (en)
FR (1) FR2578680B1 (en)
GB (1) GB2162862B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577550B2 (en) * 1986-11-20 1997-02-05 新技術事業団 Impurity doping of III-V compound semiconductor single crystal thin films
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPS61260622A (en) * 1985-05-15 1986-11-18 Res Dev Corp Of Japan Growth for gaas single crystal thin film
US4767494A (en) * 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor
JP2587623B2 (en) * 1986-11-22 1997-03-05 新技術事業団 Epitaxial crystal growth method for compound semiconductor
GB8629496D0 (en) * 1986-12-10 1987-01-21 British Petroleum Co Plc Silicon carbide
AU615469B2 (en) * 1987-08-24 1991-10-03 Canon Kabushiki Kaisha Crystal growth method
ATE112418T1 (en) * 1988-06-03 1994-10-15 Ibm PROCESS FOR MANUFACTURING HIGH-TEMPERATURE ARTIFICIAL SUPERCONDUCTORS WITH MULTILAYER STRUCTURE.
EP0387456B1 (en) * 1989-02-10 1993-09-22 Kabushiki Kaisha Toshiba Method for vapor-phase growth of an oxide thin film
DE4017966C2 (en) * 1990-06-05 1996-05-30 Ppm Pure Metals Gmbh Use of organic compounds for the separation from the gas phase
US5270247A (en) * 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
JP3298572B2 (en) 1997-09-30 2002-07-02 日本電気株式会社 Method for manufacturing optical semiconductor device
JP3045115B2 (en) * 1997-09-30 2000-05-29 日本電気株式会社 Method for manufacturing optical semiconductor device
TW515032B (en) * 1999-10-06 2002-12-21 Samsung Electronics Co Ltd Method of forming thin film using atomic layer deposition method
US6576053B1 (en) 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116C3 (en) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of high-purity monocrystalline layers consisting of silicon
SE393967B (en) * 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE
FI57975C (en) * 1979-02-28 1980-11-10 Lohja Ab Oy OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY
DD153899A5 (en) * 1980-02-26 1982-02-10 Lohja Ab Oy METHOD AND DEVICE FOR IMPLEMENTING THE GROWTH OF COMPOSED DUNY LAYERS
JPS5898917A (en) * 1981-12-09 1983-06-13 Seiko Epson Corp Atomic layer epitaxial device

Also Published As

Publication number Publication date
DE3526824A1 (en) 1986-02-06
DE3526824C2 (en) 1990-04-05
FR2578680A1 (en) 1986-09-12
GB8518834D0 (en) 1985-08-29
FR2578680B1 (en) 1990-10-26
GB2162862A (en) 1986-02-12

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 20050724