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GB2154820B - Photovoltaic relay - Google Patents

Photovoltaic relay

Info

Publication number
GB2154820B
GB2154820B GB08501283A GB8501283A GB2154820B GB 2154820 B GB2154820 B GB 2154820B GB 08501283 A GB08501283 A GB 08501283A GB 8501283 A GB8501283 A GB 8501283A GB 2154820 B GB2154820 B GB 2154820B
Authority
GB
United Kingdom
Prior art keywords
stack
bosfet
wafers
photovoltaic
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08501283A
Other versions
GB2154820A (en
GB8501283D0 (en
Inventor
Daniel M Kinzer
Howard William Collins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/581,784 external-priority patent/US4777387A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB8501283D0 publication Critical patent/GB8501283D0/en
Publication of GB2154820A publication Critical patent/GB2154820A/en
Application granted granted Critical
Publication of GB2154820B publication Critical patent/GB2154820B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Light Receiving Elements (AREA)

Abstract

A high voltage bidirectional output semiconductor field effect transistor (BOSFET) 24 is disclosed which is turned on from the electrical output of a photovoltaic stack 19 which is energized from an LED 21. The process for manufacture of the device is also disclosed. The BOSFET device consists of two lateral field effect transistors 30, 31 formed in an implanted N( - ) region (71) in a P( - ) substrate (70). A diode 35, PNP transistor 36 and resistor 37 are integrated into the same chip containing the lateral BOSFET device to form a solid state relay circuit having characteristics similar to a reed relay. A photovoltaic isolator 20 consists of a stack of semiconductor wafers (320) which are alloyed together by an aluminum silicon alloy foil (43). Each of the wafers consists of a P-type body having P + and N + diffusions on its opposite surfaces. The wafers are stacked with the same forward conduction polarity. Individual photoisolator stacks (345) are sliced from the completed stack to any desired dimension. Each individual stack is mounted with a light source (360), preferably an LED, which is arranged to illuminate the edge of each wafer within the stack. <IMAGE>
GB08501283A 1984-01-23 1985-01-18 Photovoltaic relay Expired GB2154820B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57330584A 1984-01-23 1984-01-23
US58178584A 1984-02-21 1984-02-21
US06/581,784 US4777387A (en) 1984-02-21 1984-02-21 Fast turn-off circuit for photovoltaic driven MOSFET

Publications (3)

Publication Number Publication Date
GB8501283D0 GB8501283D0 (en) 1985-02-20
GB2154820A GB2154820A (en) 1985-09-11
GB2154820B true GB2154820B (en) 1988-05-25

Family

ID=27416151

Family Applications (3)

Application Number Title Priority Date Filing Date
GB08501283A Expired GB2154820B (en) 1984-01-23 1985-01-18 Photovoltaic relay
GB08700583A Expired GB2185164B (en) 1984-01-23 1987-01-12 Photovoltaic relay with past switching circuit
GB08700582A Expired GB2184602B (en) 1984-01-23 1987-01-12 Photovoltaic isolator

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB08700583A Expired GB2185164B (en) 1984-01-23 1987-01-12 Photovoltaic relay with past switching circuit
GB08700582A Expired GB2184602B (en) 1984-01-23 1987-01-12 Photovoltaic isolator

Country Status (5)

Country Link
JP (2) JPH0645530A (en)
KR (1) KR900000829B1 (en)
DE (2) DE3502180A1 (en)
GB (3) GB2154820B (en)
IT (1) IT1183281B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224548A (en) * 1985-03-28 1986-10-06 Toshiba Corp telephone
FR2590750B1 (en) * 1985-11-22 1991-05-10 Telemecanique Electrique SEMICONDUCTOR POWER SWITCHING DEVICE AND ITS USE FOR REALIZING A STATIC RELAY IN AC
CA1285033C (en) * 1985-12-04 1991-06-18 Shigeki Kobayashi Solid state relay having a thyristor discharge circuit
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
US4859875A (en) * 1987-08-28 1989-08-22 Siemens Aktiengesellschaft Optocoupler for power FET
JPS6481522A (en) * 1987-09-24 1989-03-27 Agency Ind Science Techn Optical control circuit and semiconductor device constituting said circuit
US4864126A (en) * 1988-06-17 1989-09-05 Hewlett-Packard Company Solid state relay with optically controlled shunt and series enhancement circuit
DE4005835C2 (en) * 1989-02-23 1996-10-10 Agency Ind Science Techn Method for operating a photoelectric converter and photoelectric converter for carrying out the method
DE4206393C2 (en) * 1992-02-29 1995-05-18 Smi Syst Microelect Innovat Solid state relay and method for its manufacture
JP2001053597A (en) * 1999-08-06 2001-02-23 Matsushita Electric Works Ltd Illumination sensor and electronic automatic switch
KR100864918B1 (en) 2001-12-26 2008-10-22 엘지디스플레이 주식회사 Data driving device of liquid crystal display
RU2369007C2 (en) * 2007-06-27 2009-09-27 Ставропольский военный институт связи ракетных войск Interface device based on optoelectronic switch
US9214935B2 (en) * 2012-05-17 2015-12-15 Rockwell Automation Technologies, Inc. Output module for industrial control with sink and source capability and low heat dissipation
US10411150B2 (en) * 2016-12-30 2019-09-10 Texas Instruments Incorporated Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422527A (en) * 1965-06-21 1969-01-21 Int Rectifier Corp Method of manufacture of high voltage solar cell
GB1254302A (en) * 1968-03-11 1971-11-17 Associated Semiconductor Mft Improvements in insulated gate field effect transistors
JPS4936515B1 (en) * 1970-06-10 1974-10-01
JPS5116112B2 (en) * 1971-08-04 1976-05-21
JPS5522947B2 (en) * 1973-04-25 1980-06-19
FR2311452A1 (en) * 1975-05-16 1976-12-10 Thomson Csf SEMICONDUCTOR DEVICE FOR QUICK POWER SWITCHING AND DEVICE CONTAINING SUCH A DEVICE
JPS5284982A (en) * 1976-01-06 1977-07-14 Sharp Corp High dielectric strength field effect semiconductor device
JPS5289083A (en) * 1976-01-19 1977-07-26 Matsushita Electric Ind Co Ltd Production of semiconductor photoelectric converting element
GB1602889A (en) * 1978-05-30 1981-11-18 Lidorenko N S Semiconductor photovoltaic generator and a method of manufacturing same
JPS554948A (en) * 1978-06-28 1980-01-14 Hitachi Ltd Mis resistance circuit
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
JPS5615079A (en) * 1979-07-16 1981-02-13 Mitsubishi Electric Corp Insulated gate field effect transistor couple
US4296331A (en) * 1979-08-09 1981-10-20 Theta-Corporation Optically coupled electric power relay
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS616711Y2 (en) * 1980-05-12 1986-02-28
US4423341A (en) * 1981-01-02 1983-12-27 Sperry Corporation Fast switching field effect transistor driver circuit
US4419586A (en) * 1981-08-27 1983-12-06 Motorola, Inc. Solid-state relay and regulator
JPS5842269A (en) * 1981-09-05 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Mis-type variable resistor
US4492883A (en) * 1982-06-21 1985-01-08 Eaton Corporation Unpowered fast gate turn-off FET
US4481434A (en) * 1982-06-21 1984-11-06 Eaton Corporation Self regenerative fast gate turn-off FET
US4500801A (en) * 1982-06-21 1985-02-19 Eaton Corporation Self-powered nonregenerative fast gate turn-off FET
US4540893A (en) * 1983-05-31 1985-09-10 General Electric Company Controlled switching of non-regenerative power semiconductors

Also Published As

Publication number Publication date
JPH0613648A (en) 1994-01-21
KR900000829B1 (en) 1990-02-17
GB8700582D0 (en) 1987-02-18
GB2184602A (en) 1987-06-24
GB2185164A (en) 1987-07-08
GB2154820A (en) 1985-09-11
KR850005737A (en) 1985-08-28
IT1183281B (en) 1987-10-22
GB8501283D0 (en) 1985-02-20
DE3502180A1 (en) 1985-08-01
GB2185164B (en) 1988-05-25
DE3546524C2 (en) 1991-05-02
JPH0645530A (en) 1994-02-18
IT8519170A0 (en) 1985-01-21
GB2184602B (en) 1988-05-25
IT8519170A1 (en) 1986-07-21
GB8700583D0 (en) 1987-02-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19960118