GB2037000A - Light guide - Google Patents
Light guide Download PDFInfo
- Publication number
- GB2037000A GB2037000A GB7939559A GB7939559A GB2037000A GB 2037000 A GB2037000 A GB 2037000A GB 7939559 A GB7939559 A GB 7939559A GB 7939559 A GB7939559 A GB 7939559A GB 2037000 A GB2037000 A GB 2037000A
- Authority
- GB
- United Kingdom
- Prior art keywords
- laser
- pipe
- laser beam
- substrate
- diffuser according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011022 opal Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 27
- 239000002019 doping agent Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ROTPTZPNGBUOLZ-UHFFFAOYSA-N arsenic boron Chemical compound [B].[As] ROTPTZPNGBUOLZ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- -1 ferrous metals Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B2006/0098—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings for scanning
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12169—Annealing
- G02B2006/12171—Annealing using a laser beam
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Lasers (AREA)
Abstract
A laser beam diffuser for use in laser beam annealing comprises a silica laser beam guiding pipe (3), having a diffusing surface (6) or layer at one end and a polished surface (12) at the other end. The diffusing surface (6) may be a ground surface. A bend (8) or bends removes axial component of speckle produced by the ground surface. Adjacent the polished end (12) the pipe may be of reduced cross section (10, 11). <IMAGE>
Description
SPECIFICATION
Laser beam annealing
This invention concerns the annealing of semiconductor material by beams of laser radiation, in particular it provides a diffuser for a laser beam.
Laser beam annealing is described in.Science,
Vol. 201, 28 July, 1978, pages 333-335.
One use of !aser beam annealing is the annealing of ion-implanted semiconductor layers to electrically activate the implanted dopant.
Typically the dopant is implanted to 3 depth of 0.05-0.4 ym. Substrates may be annealed by heating in an oven but this may take an hour or so for each sample batch. In contrast laser annealing is quick and can be selective, i.e. portions of a substrate can be annealed leaving unannealed portions and the substrate is heated to a depth of typically less than 10 ,um. Laser radiation in the form of short e.g. 30 ns pulses can heat the surface sufficiently quickly to melt only approximately the top Mm. Unfortunately the energy applied to the substrate must be far more uniform than that present in a laser beam. It has been found that the energy intensity varies considerably across a beam of laser radiation i.e.
the mode pattern. This results in parts of a substrate receiving energy greatly in excess of that required with consequential erosion of the substrate, whilst other parts receive only the required energy density to anneal correctly.
Attempts to overcome this have used a diffusing ground glass screen between laser and substrate.
Unfortunately due to the wide angle dispersion introduced by the screen the available power density distribution at the substrate is of rounded
Gaussian forms with insufficient amplitude at the edges of the beam. Also the screen may induce speckle which gives rise to locally intense radiation on the substrate and consequential pitting of the surface.
According to this invention a laser beam diffuser for use in laser beam annealing comprises
a laser beam guiding pipe having at one end a diffusing surface and at its other end a polished surface.
The diffusing surface may be a ground surface in which case the pipe is provided with a bend, typically a 900 bend, to remove especially the axial component of the speckle produced by the ground surface. The bend may be a simple bend in a single plane or a bend or bends in more than one plane, eg. a part of a spiral. The bend or
bends should be -sufficient to prevent a direct, straight line, passage of light between the two ends of the pipe. Alternatively a diffusing layer,
e.g. of opal, may be fixed to the end of the pipe.
Adjacent the polished end the pipe may be tapered to concentrate the laser beam power and to increase the laser beam divergence so improving the homogenization process.
The pipe may be silica of a high optical transparency at the laser wavelength or another glass with suitable tranmission properties. The guide should have a smooth curved surface to internally reflect the laser light during its passage from the diffusing to the polished end.
Apparatus for laser beam annealing comprises a laser whose output is directed onto the diffusing end of the light pipe, and a table for mounting a substrate close to the polished end of the pipe. The laser may be used in either pulse#d or CW modes.
The invention will now be described by way of example only with reference to the accompanying drawings in which:
Figure 1 shows apparatus for laser beam annealing, and
Figure 2 shows to an enlarged scale the diffuser in Figure 1.
As shown a Q switched Nd-YAG or Ruby laster
1 is arranged to direct its output beam 2 into a silica light pipe 3. A substrate 4 to be annealed is placed close to the pipe 3 on a movable table 5.
The laser used depends on the absorption of the substrate relative to the laser wavelength. A typical Nd-YAG or Ruby laser gives an output radiation energy density in the range 0.1 - 1 Joule/cm2.
The end of the pipe 3 nearest the laser 1 , the input end 6, is ground flat with diamond compound (typically 6 or 1 4cm). From the diffusing end 6 the pipe of 1 cm diameter extends straight for about 10 cm and is then bent into a 900 bend 8 of about 4 cm radus. Very small (~1 cm) radii of curvature give unacceptable loss of light through the side-wall. The purpose of the bend 8 is to give random multiple reflections from the walls to remove especially axial speckle generated by the ground end surface 6. Beyond the bend 8 the pipe extends at 9 for about 6 cm and is then tapered 10 smoothly over a length of about 1 cm to reduce the pipe diameter to about 0.65 cm.This reduced diameter 1 1 continues for about 6 cm and terminates in an optically polished end 12, which may have a flat or slightly curved face.
The tapered section 9 increases the power density to compensate for losses in the pipe, typically 37%. Final laser spot intensity variations can be less than -5%.
The reduced diameter portion 10 must be short enough to avoid build up of intensity on the pipe axis but not too short, otherwise reflections from the tapered section 9 can cause focussing and final homogenisation will be incomplete.
Alternatively, additional guide curvature may be introduced to suppress residual radiation inhomogeneities.
It is necessary to position the substrate 4 close e.g. T mm to the pipe output end 11 to give a uniform intensity of laser beam onto the substrate. Alternatively the output spot can be projected onto the substrate by use of a suitable lens system.
In use a substrate is doped by conventional ion implantation techniques and placed on the table 5.
Such implantation produces a highly damaged or amorphous surface layer due to the atom displacements caused by the penetration of ions into the crystal lattice. The laser 1 is repetitively fired and the substrate moved between successive bursts of the laser beam. By this means selected areas of the substrate are annealed to remove damage caused by the ion implantation and restore the substrate to a crystalline state and e.g.
provide electrically conducting path amongst an insulating non-annealed substrate.
Alternatively the laser may be fired repetitively onto one spot on the substrate to effect a segregation of dopant to the surface as the substrate cools between each firing.
Examples of materials that can be laser annealed are ion implanted silicon germanium or diamond where the ions are implanted by conventional techniques to a typical depth of about 0.2 #m. The dopant ions may be phosphorus, boron arsenic, aluminium, gallium, indium, copper, iron, nickel, gold and platinum.
the laser power received on the substrate for single shot annealing is about 0.5 to 3 Joule/cm2 for about 30 nano secs to anneal to a depth of about less than 1 mum. For repetitive laser firing onto a spot the laser power may be reduced below 0.5 Joule/cm2. This may not melt the amorphous layer but heat it sufficiently to cause recrystallisation after repeated heating.
Resolidification of a melted substrate surface takes place in about 1 us.
Other materials suitable for laser annealing include indium phosphide, gallium arsenide and indium\arsenide doped with ions of sulphur, selenium tellurium, zinc, cadmium, silicon, germanium, tin or argon; the compound alloy cadmium mercury telluride doped with e.g.
aluminium, mercury, or protons of hydrogen bombardment. For single shot annealing of InP typical laser power on the substrate is between 0.1 to 1 Joule/cm2 and less for multi shot operation.
Some Ill-V compounds cannot be conventionally annealed because some constituents preferentially evaporate off on heating. However the short period of heating provided by the laser beam enables annealing to be performed with reduced loss of volatile component.
For example InP when heated in an oven preferentially evaporates phosphorus to leave an indium rich surface. Laser beam annealing for small number of laser bursts, does not allow significant amounts of phosphorus to evaporate.
Repeated applications of the laser may result in appreciable evaporation of phosphorus. In these cases the substrate may be coated with a layer of silicon nitride to prevent phosphorus evaporation.
Also some dopants e.g. nickel cannot be conventionally annealed because the dopant
diffuses too widely. Laser annealing allows annealing with minimal diffusion.
Laser annealing may also be applied to the surface annealing of metals e.g. to relieve surface stress in ferrous or non ferrous metals and alloys of such metals.
The light pipe 3 may be any other suitable size, circular or other cross section, and with or without a reduced diameter end. The relevant sizes are determined by the laser beam 2 diameter and power available, and size of annealing spot required. For example two other pipes had the following dimensions:~
(i) pipe diameter at 7, 0.5 cm, length 7, 7 cm, length 9, 3 cm, taper length 10, 2 cm, length 11, 3 cm, diameter at 12,0.17cm; (ii) pipe diameter at 7, 0.5 cm, length 7, 5 cm, length 9, 2 cm, taper length 10, 1 cm, length 22, 4 cm, diameter at 12, 0.12 cm.
The polished end 12 may be coated with an anti-reflection coating e.g. MgF. Also the pipe 3 may be coated in part or whole to provide
maximum internal reflection of the laser light When the diffuser end 6 of the pipe is a ground
surface the speckle produced can be removed by a
bend 7 which for some cases is about 90 ; increasing the amount of bend does not improve the homogeneity of the laser beam and only absorbs laser power. Reducing the bend below
900 is possible but values much lower than 900 can allow speckle to pass through the pipe 3 and damage the substrate. However, adding a second
curve can once again reduce speckle intensity.
To overcome speckle a layer of e.g. opal may be fixed on the end 6 to provide a speckle free diffuser. In this case the end 6 is not ground and the bend 7 may not be required.
Claims (10)
1. A laser beåm diffuser for use in laser beam annealing characterised by a laser beam guiding pipe (3) having at one end a diffusing surface (6) and at the other end a polished surface (12).
2. A diffuser according to claim 1 characterised in that the diffusing surface (6) is a ground surface.
3. A diffuser according to claim 2 characterised by a bend (8) between the two ends (6, 12).
4. A diffuser according to claim 3 characterised by bends (8) in more than one plane.
5. A diffuser according to claim 1 characterised by a tapered portion (10) leading to a reduced cross section portion (1 1).
6. A diffuser according to claim 1 characterised by a pipe (3) of silica having a high optical
transparency at a laser wavelength.
7. A diffuser according to claim 1 characterised
in that the diffusing surface (6) is a layer of diffusing material.
8. A diffuser according to claim 7 characterised by a diffusing layer of opal material.
9. A diffuser according to claim 1 characterised by antireflection coating on the polished end 12.
10. A diffuser according to claim 1 characterised by antireflection coating on the surface between the two ends (6, 12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7939559A GB2037000B (en) | 1978-11-24 | 1979-11-15 | Light guide |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7846015 | 1978-11-24 | ||
| GB7939559A GB2037000B (en) | 1978-11-24 | 1979-11-15 | Light guide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2037000A true GB2037000A (en) | 1980-07-02 |
| GB2037000B GB2037000B (en) | 1982-11-03 |
Family
ID=26269731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7939559A Expired GB2037000B (en) | 1978-11-24 | 1979-11-15 | Light guide |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2037000B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0048514A1 (en) * | 1980-09-18 | 1982-03-31 | L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique | Process for crystallising films, and films thus obtained |
| GB2154017A (en) * | 1984-02-03 | 1985-08-29 | Gen Electric | Laser material processing through a fiber optic |
| GB2180363A (en) * | 1985-09-13 | 1987-03-25 | Stc Plc | UV laser beam homogeniser comprising bent tubular waveguide |
| FR2651508A1 (en) * | 1989-09-05 | 1991-03-08 | Centre Nat Rech Scient | DEVICE FOR PROCESSING LASER SHOCK PARTS. |
| WO2002084237A1 (en) * | 2001-04-11 | 2002-10-24 | Rio Grande Medical Technologies, Inc. | Illumination device and method for spectroscopic analysis |
| DE102010020156B4 (en) * | 2009-05-15 | 2025-12-31 | Günther Nath | Lighting device with radiation homogenization |
-
1979
- 1979-11-15 GB GB7939559A patent/GB2037000B/en not_active Expired
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0048514A1 (en) * | 1980-09-18 | 1982-03-31 | L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique | Process for crystallising films, and films thus obtained |
| GB2154017A (en) * | 1984-02-03 | 1985-08-29 | Gen Electric | Laser material processing through a fiber optic |
| GB2180363A (en) * | 1985-09-13 | 1987-03-25 | Stc Plc | UV laser beam homogeniser comprising bent tubular waveguide |
| GB2180363B (en) * | 1985-09-13 | 1989-09-06 | Stc Plc | Beam homogeniser |
| FR2651508A1 (en) * | 1989-09-05 | 1991-03-08 | Centre Nat Rech Scient | DEVICE FOR PROCESSING LASER SHOCK PARTS. |
| EP0416988A1 (en) * | 1989-09-05 | 1991-03-13 | Centre National De La Recherche Scientifique (Cnrs) | Device for laser shock treatment of work pieces |
| WO2002084237A1 (en) * | 2001-04-11 | 2002-10-24 | Rio Grande Medical Technologies, Inc. | Illumination device and method for spectroscopic analysis |
| US6862091B2 (en) | 2001-04-11 | 2005-03-01 | Inlight Solutions, Inc. | Illumination device and method for spectroscopic analysis |
| DE102010020156B4 (en) * | 2009-05-15 | 2025-12-31 | Günther Nath | Lighting device with radiation homogenization |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2037000B (en) | 1982-11-03 |
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