GB2035684B - Subdividing semiconductor wafers - Google Patents

Subdividing semiconductor wafers

Info

Publication number: GB2035684B
Authority: GB; United Kingdom
Prior art keywords: subdividing; semiconductor wafers; wafers; semiconductor; subdividing semiconductor
Prior art date: 1978-10-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB7935539A

Other versions

GB2035684A (en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

ExxonMobil Technology and Engineering Co

Original Assignee

Exxon Research and Engineering Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-10-13

Filing date

1979-10-12

Publication date

1983-08-03

1978-10-13 Priority claimed from US05/951,074 external-priority patent/US4236296A/en

1978-10-13 Priority claimed from US05/951,064 external-priority patent/US4237601A/en

1979-10-12 Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co

1980-06-18 Publication of GB2035684A publication Critical patent/GB2035684A/en

1983-08-03 Application granted granted Critical

1983-08-03 Publication of GB2035684B publication Critical patent/GB2035684B/en

Status Expired legal-status Critical Current

Classifications

- H10P95/00—
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10P50/648—
- H10P54/00—
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Dicing (AREA)
Semiconductor Lasers (AREA)
Led Devices (AREA)

GB7935539A 1978-10-13 1979-10-12 Subdividing semiconductor wafers Expired GB2035684B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US05/951,074 US4236296A (en)	1978-10-13	1978-10-13	Etch method of cleaving semiconductor diode laser wafers
US05/951,064 US4237601A (en)	1978-10-13	1978-10-13	Method of cleaving semiconductor diode laser wafers

Publications (2)

Publication Number	Publication Date
GB2035684A GB2035684A (en)	1980-06-18
GB2035684B true GB2035684B (en)	1983-08-03

Family

ID=27130309

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB7935539A Expired GB2035684B (en)	1978-10-13	1979-10-12	Subdividing semiconductor wafers

Country Status (8)

Country	Link
CA (1)	CA1140661A (en)
DE (1)	DE2941476A1 (en)
FR (1)	FR2438914A1 (en)
GB (1)	GB2035684B (en)
IL (1)	IL58443A0 (en)
IT (1)	IT1123839B (en)
NL (1)	NL7907625A (en)
SE (1)	SE7908485L (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6041478B2 (en) *	1979-09-10	1985-09-17	富士通株式会社	Manufacturing method of semiconductor laser device
CA1201520A (en) *	1982-09-10	1986-03-04	Charles A. Burrus, Jr.	Fabrication of cleaved semiconductor lasers
DE3435306A1 (en) *	1984-09-26	1986-04-03	Siemens AG, 1000 Berlin und 8000 München	METHOD FOR PRODUCING LASER DIODES WITH JUTTED INTEGRATED HEAT SINK
JPH01280388A (en) *	1988-05-06	1989-11-10	Sharp Corp	Manufacture of semiconductor element
DE3826736A1 (en) *	1988-08-05	1990-02-08	Siemens Ag	METHOD FOR SEPARATING LED CHIP ARRANGEMENTS MONOLITHICALLY PRODUCED ON A SEMICONDUCTOR SUB Wafer
JPH07176827A (en) *	1993-08-20	1995-07-14	Mitsubishi Electric Corp	Manufacturing method of semiconductor laser device with modulator
US5418190A (en) *	1993-12-30	1995-05-23	At&T Corp.	Method of fabrication for electro-optical devices
DE102017117136B4 (en)	2017-07-28	2022-09-22	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Method of manufacturing a plurality of laser diodes and laser diode
DE102017012441B4 (en) *	2017-07-28	2025-08-07	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Method for producing a plurality of laser diodes and laser diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3471923A (en) *	1966-12-09	1969-10-14	Rca Corp	Method of making diode arrays

1979
- 1979-10-12 IT IT26486/79A patent/IT1123839B/en active
- 1979-10-12 FR FR7925411A patent/FR2438914A1/fr active Pending
- 1979-10-12 GB GB7935539A patent/GB2035684B/en not_active Expired
- 1979-10-12 SE SE7908485A patent/SE7908485L/en not_active Application Discontinuation
- 1979-10-12 CA CA000337513A patent/CA1140661A/en not_active Expired
- 1979-10-12 IL IL58443A patent/IL58443A0/en unknown
- 1979-10-12 DE DE19792941476 patent/DE2941476A1/en not_active Withdrawn
- 1979-10-15 NL NL7907625A patent/NL7907625A/en not_active Application Discontinuation

Also Published As

Publication number	Publication date
IT7926486A0 (en)	1979-10-12
GB2035684A (en)	1980-06-18
SE7908485L (en)	1980-04-14
IT1123839B (en)	1986-04-30
IL58443A0 (en)	1980-01-31
FR2438914A1 (en)	1980-05-09
NL7907625A (en)	1980-04-15
DE2941476A1 (en)	1980-04-24
CA1140661A (en)	1983-02-01

Publication	Publication Date	Title
JPS54109780A (en)	1979-08-28	Semiconductor
JPS54129886A (en)	1979-10-08	Semiconductor
JPS54144874A (en)	1979-11-12	Semiconductor device
JPS54133090A (en)	1979-10-16	Semiconductor device
JPS54141592A (en)	1979-11-02	Semiconductor device
GB2018511B (en)	1982-04-28	Semiconductor device
GB2035684B (en)	1983-08-03	Subdividing semiconductor wafers
GB2014362B (en)	1982-02-24	Semiconductor devices
GB2026240B (en)	1982-12-01	Semiconductor devices
GB2027272B (en)	1983-03-23	Semiconductor devices
GB2038088B (en)	1983-05-25	Semiconductor structures
JPS54114985A (en)	1979-09-07	Semiconductor
GB2064869B (en)	1983-05-18	Semiconductor device
JPS54104779A (en)	1979-08-17	Semiconductor device
GB2023926B (en)	1983-03-16	Conductors for semiconductor devices
GB2014363B (en)	1982-06-03	Semiconductor devices
JPS54115083A (en)	1979-09-07	Semiconductor
JPS54128673A (en)	1979-10-05	Semiconductor
JPS54105463A (en)	1979-08-18	Semiconductor
JPS54123880A (en)	1979-09-26	Semiconductor
JPS5452479A (en)	1979-04-25	Semiconductor
GB2033149B (en)	1983-03-30	Semiconductor device
JPS54134576A (en)	1979-10-19	Semiconductor device
JPS54137277A (en)	1979-10-24	Semiconductor device
JPS5494289A (en)	1979-07-25	Semiconductor

Legal Events

Date	Code	Title	Description
1983-04-27	732	Registration of transactions, instruments or events in the register (sect. 32/1977)
1985-06-12	PCNP	Patent ceased through non-payment of renewal fee