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GB2029083B - Semiconductor waveguide devices - Google Patents

Semiconductor waveguide devices

Info

Publication number
GB2029083B
GB2029083B GB7833856A GB7833856A GB2029083B GB 2029083 B GB2029083 B GB 2029083B GB 7833856 A GB7833856 A GB 7833856A GB 7833856 A GB7833856 A GB 7833856A GB 2029083 B GB2029083 B GB 2029083B
Authority
GB
United Kingdom
Prior art keywords
waveguide devices
semiconductor waveguide
semiconductor
devices
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7833856A
Other versions
GB2029083A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB7833856A priority Critical patent/GB2029083B/en
Priority to AU49778/79A priority patent/AU4977879A/en
Priority to DE19792933149 priority patent/DE2933149A1/en
Priority to NZ191335A priority patent/NZ191335A/en
Publication of GB2029083A publication Critical patent/GB2029083A/en
Application granted granted Critical
Publication of GB2029083B publication Critical patent/GB2029083B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
GB7833856A 1978-08-18 1978-08-18 Semiconductor waveguide devices Expired GB2029083B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB7833856A GB2029083B (en) 1978-08-18 1978-08-18 Semiconductor waveguide devices
AU49778/79A AU4977879A (en) 1978-08-18 1979-08-10 Semiconductor waveguide
DE19792933149 DE2933149A1 (en) 1978-08-18 1979-08-16 WAVE-CONDUCTING SEMICONDUCTOR COMPONENT
NZ191335A NZ191335A (en) 1978-08-18 1979-08-17 Ii-v semiconductor optical waveguide device with lateral photoelectric waveguiding construction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7833856A GB2029083B (en) 1978-08-18 1978-08-18 Semiconductor waveguide devices

Publications (2)

Publication Number Publication Date
GB2029083A GB2029083A (en) 1980-03-12
GB2029083B true GB2029083B (en) 1982-08-11

Family

ID=10499146

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7833856A Expired GB2029083B (en) 1978-08-18 1978-08-18 Semiconductor waveguide devices

Country Status (4)

Country Link
AU (1) AU4977879A (en)
DE (1) DE2933149A1 (en)
GB (1) GB2029083B (en)
NZ (1) NZ191335A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663761A (en) * 1983-10-12 1987-05-05 The General Electric Company, P.L.C. Semiconductor diode lasers
US4733927A (en) * 1984-11-14 1988-03-29 Hughes Aircraft Company Stress waveguides in bulk crystalline materials
DE3856396T2 (en) * 1988-01-06 2000-08-31 Telstra Corp. Ltd., Melbourne POWER INJECTION LASER
DE3903120A1 (en) * 1989-02-02 1990-08-16 Licentia Gmbh Semiconductor waveguide having strain-matched wave confinement
AU764799B2 (en) * 1997-12-29 2003-08-28 Coretek, Inc. Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
US6584126B2 (en) 1998-06-26 2003-06-24 Coretek, Inc. Tunable Fabry-Perot filter and tunable vertical cavity surface emitting laser
DE102017112242B4 (en) * 2016-06-20 2019-10-24 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser
CN109361140B (en) * 2018-12-14 2023-09-01 中国地质大学（武汉） A 2μm Dissipative Soliton Resonant Mode-Locked Fiber Laser
TWI767598B (en) * 2020-03-20 2022-06-11 德商通快光電器件有限公司 Method of forming an optical aperture of a vertical cavity surface emitting laser and vertical cavity surface emitting laser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures

Also Published As

Publication number Publication date
AU4977879A (en) 1980-02-21
GB2029083A (en) 1980-03-12
NZ191335A (en) 1981-12-15
DE2933149A1 (en) 1980-02-21

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930818