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GB202217962D0 - Electronic device - Google Patents

Electronic device

Info

Publication number
GB202217962D0
GB202217962D0 GBGB2217962.6A GB202217962A GB202217962D0 GB 202217962 D0 GB202217962 D0 GB 202217962D0 GB 202217962 A GB202217962 A GB 202217962A GB 202217962 D0 GB202217962 D0 GB 202217962D0
Authority
GB
United Kingdom
Prior art keywords
electronic device
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB2217962.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pragmatic Semiconductor Ltd
Original Assignee
Pragmatic Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pragmatic Semiconductor Ltd filed Critical Pragmatic Semiconductor Ltd
Priority to GBGB2217962.6A priority Critical patent/GB202217962D0/en
Publication of GB202217962D0 publication Critical patent/GB202217962D0/en
Priority to EP23832792.8A priority patent/EP4627633A1/en
Priority to GB2417597.8A priority patent/GB2634833A/en
Priority to CN202380092777.2A priority patent/CN120642597A/en
Priority to JP2025530604A priority patent/JP2025538644A/en
Priority to TW112146393A priority patent/TW202427810A/en
Priority to KR1020257021340A priority patent/KR20250116074A/en
Priority to PCT/GB2023/053083 priority patent/WO2024115895A1/en
Priority to GB2318200.9A priority patent/GB2627043A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
GBGB2217962.6A 2022-11-29 2022-11-29 Electronic device Ceased GB202217962D0 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GBGB2217962.6A GB202217962D0 (en) 2022-11-29 2022-11-29 Electronic device
EP23832792.8A EP4627633A1 (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture
GB2417597.8A GB2634833A (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture
CN202380092777.2A CN120642597A (en) 2022-11-29 2023-11-29 Integrated circuit and method for manufacturing the same
JP2025530604A JP2025538644A (en) 2022-11-29 2023-11-29 Integrated circuits and related manufacturing methods
TW112146393A TW202427810A (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture
KR1020257021340A KR20250116074A (en) 2022-11-29 2023-11-29 Integrated circuits and related manufacturing methods
PCT/GB2023/053083 WO2024115895A1 (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture
GB2318200.9A GB2627043A (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB2217962.6A GB202217962D0 (en) 2022-11-29 2022-11-29 Electronic device

Publications (1)

Publication Number Publication Date
GB202217962D0 true GB202217962D0 (en) 2023-01-11

Family

ID=84889298

Family Applications (3)

Application Number Title Priority Date Filing Date
GBGB2217962.6A Ceased GB202217962D0 (en) 2022-11-29 2022-11-29 Electronic device
GB2318200.9A Pending GB2627043A (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture
GB2417597.8A Pending GB2634833A (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB2318200.9A Pending GB2627043A (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture
GB2417597.8A Pending GB2634833A (en) 2022-11-29 2023-11-29 Integrated circuit and associated method of manufacture

Country Status (7)

Country Link
EP (1) EP4627633A1 (en)
JP (1) JP2025538644A (en)
KR (1) KR20250116074A (en)
CN (1) CN120642597A (en)
GB (3) GB202217962D0 (en)
TW (1) TW202427810A (en)
WO (1) WO2024115895A1 (en)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
WO2010032386A1 (en) * 2008-09-17 2010-03-25 シャープ株式会社 Semiconductor device
CN102822981B (en) * 2010-04-07 2014-03-12 夏普株式会社 Circuit board and display device
GB2489682B (en) 2011-03-30 2015-11-04 Pragmatic Printing Ltd Electronic device and its method of manufacture
US9564478B2 (en) * 2013-08-26 2017-02-07 Apple Inc. Liquid crystal displays with oxide-based thin-film transistors
EP3113226B1 (en) * 2014-02-25 2019-05-08 LG Display Co., Ltd. Display backplane and method for manufacturing same
KR102658874B1 (en) * 2014-12-31 2024-04-17 엘지디스플레이 주식회사 Display backplane having multiple types of thin-film-transistors
US10020354B2 (en) * 2015-04-17 2018-07-10 Apple Inc. Organic light-emitting diode displays with silicon and semiconducting oxide thin-film transistors
CN107799521A (en) * 2017-10-10 2018-03-13 深圳市华星光电半导体显示技术有限公司 CMOS inverter and array base palte
KR20220085418A (en) * 2020-12-15 2022-06-22 엘지디스플레이 주식회사 Organic light emitting display device

Also Published As

Publication number Publication date
EP4627633A1 (en) 2025-10-08
GB2634833A (en) 2025-04-23
TW202427810A (en) 2024-07-01
GB202417597D0 (en) 2025-01-15
WO2024115895A1 (en) 2024-06-06
GB202318200D0 (en) 2024-01-10
CN120642597A (en) 2025-09-12
JP2025538644A (en) 2025-11-28
GB2627043A (en) 2024-08-14
GB2634833A8 (en) 2025-06-25
KR20250116074A (en) 2025-07-31

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)