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GB2021861B - Field effect transistors - Google Patents

Field effect transistors

Info

Publication number
GB2021861B
GB2021861B GB7918077A GB7918077A GB2021861B GB 2021861 B GB2021861 B GB 2021861B GB 7918077 A GB7918077 A GB 7918077A GB 7918077 A GB7918077 A GB 7918077A GB 2021861 B GB2021861 B GB 2021861B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
transistors
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7918077A
Other versions
GB2021861A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/909,886 external-priority patent/US4277881A/en
Priority claimed from US05/913,258 external-priority patent/US4231051A/en
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of GB2021861A publication Critical patent/GB2021861A/en
Application granted granted Critical
Publication of GB2021861B publication Critical patent/GB2021861B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D64/0113—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
    • H10P14/6308—
    • H10P76/40—
GB7918077A 1978-05-26 1979-05-24 Field effect transistors Expired GB2021861B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/909,886 US4277881A (en) 1978-05-26 1978-05-26 Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US05/913,258 US4231051A (en) 1978-06-06 1978-06-06 Process for producing minimal geometry devices for VSLI applications utilizing self-aligned gates and self-aligned contacts, and resultant structures

Publications (2)

Publication Number Publication Date
GB2021861A GB2021861A (en) 1979-12-05
GB2021861B true GB2021861B (en) 1982-09-29

Family

ID=27129542

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7918077A Expired GB2021861B (en) 1978-05-26 1979-05-24 Field effect transistors

Country Status (1)

Country Link
GB (1) GB2021861B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0054102A3 (en) * 1980-12-11 1983-07-27 Rockwell International Corporation Very high density cells comprising a rom and method of manufacturing same
US4404581A (en) * 1980-12-15 1983-09-13 Rockwell International Corporation ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells
AT387474B (en) * 1980-12-23 1989-01-25 Philips Nv METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
CA1198226A (en) * 1982-06-01 1985-12-17 Eliezer Kinsbron Method for manufacturing a semiconductor device
US5340762A (en) * 1985-04-01 1994-08-23 Fairchild Semiconductor Corporation Method of making small contactless RAM cell
CA1258320A (en) * 1985-04-01 1989-08-08 Madhukar B. Vora Small contactless ram cell
JP2904533B2 (en) * 1989-03-09 1999-06-14 株式会社東芝 Method for manufacturing semiconductor device
US6483144B2 (en) * 1999-11-30 2002-11-19 Agere Systems Guardian Corp. Semiconductor device having self-aligned contact and landing pad structure and method of forming same

Also Published As

Publication number Publication date
GB2021861A (en) 1979-12-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee