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GB2019243A - Die for EFG crystal growth - Google Patents

Die for EFG crystal growth

Info

Publication number
GB2019243A
GB2019243A GB7908542A GB7908542A GB2019243A GB 2019243 A GB2019243 A GB 2019243A GB 7908542 A GB7908542 A GB 7908542A GB 7908542 A GB7908542 A GB 7908542A GB 2019243 A GB2019243 A GB 2019243A
Authority
GB
United Kingdom
Prior art keywords
die
crystal growth
efg crystal
efg
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7908542A
Other versions
GB2019243B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Publication of GB2019243A publication Critical patent/GB2019243A/en
Application granted granted Critical
Publication of GB2019243B publication Critical patent/GB2019243B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The apparatus is an improved apparatus for use in a system for growing crystalline bodies from the melt. The apparatus has a novel capillary die in which the die capillaries are defined by one or more slots or grooves 36 formed in a side wall surface of the die. <IMAGE>
GB7908542A 1978-04-24 1979-03-12 Die for efg crystal growth Expired GB2019243B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89949778A 1978-04-24 1978-04-24

Publications (2)

Publication Number Publication Date
GB2019243A true GB2019243A (en) 1979-10-31
GB2019243B GB2019243B (en) 1982-06-16

Family

ID=25411088

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7908542A Expired GB2019243B (en) 1978-04-24 1979-03-12 Die for efg crystal growth

Country Status (9)

Country Link
JP (1) JPS6033799B2 (en)
AU (1) AU527424B2 (en)
CA (1) CA1116985A (en)
DE (1) DE2916389A1 (en)
FR (1) FR2424060A1 (en)
GB (1) GB2019243B (en)
IL (1) IL56786A (en)
IN (1) IN151094B (en)
NL (1) NL7902358A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003033780A1 (en) * 2001-10-16 2003-04-24 Utar Scientific Inc. Method of growing piezoelectric lanthanide gallium crystals
EP4053310A4 (en) * 2019-10-28 2023-12-13 AGC Inc. SINGLE CRYSTAL INGOT, CRYSTAL GROWTH MATRIX, AND METHOD FOR PRODUCING SINGLE CRYSTAL

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3366718D1 (en) * 1983-02-09 1986-11-13 Commissariat Energie Atomique Method of producing plates of metallic or semiconducting material by moulding without direct contact with the walls of the mould

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003033780A1 (en) * 2001-10-16 2003-04-24 Utar Scientific Inc. Method of growing piezoelectric lanthanide gallium crystals
EP4053310A4 (en) * 2019-10-28 2023-12-13 AGC Inc. SINGLE CRYSTAL INGOT, CRYSTAL GROWTH MATRIX, AND METHOD FOR PRODUCING SINGLE CRYSTAL

Also Published As

Publication number Publication date
IL56786A (en) 1981-10-30
AU4487179A (en) 1979-11-01
CA1116985A (en) 1982-01-26
JPS6033799B2 (en) 1985-08-05
JPS54142180A (en) 1979-11-06
AU527424B2 (en) 1983-03-03
FR2424060B1 (en) 1984-08-24
GB2019243B (en) 1982-06-16
FR2424060A1 (en) 1979-11-23
IN151094B (en) 1983-02-19
NL7902358A (en) 1979-10-26
DE2916389A1 (en) 1979-10-31

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee