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GB201900832D0 - Organic field-effect transistors - Google Patents

Organic field-effect transistors

Info

Publication number
GB201900832D0
GB201900832D0 GBGB1900832.5A GB201900832A GB201900832D0 GB 201900832 D0 GB201900832 D0 GB 201900832D0 GB 201900832 A GB201900832 A GB 201900832A GB 201900832 D0 GB201900832 D0 GB 201900832D0
Authority
GB
United Kingdom
Prior art keywords
effect transistors
organic field
organic
field
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1900832.5A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Manchester
Original Assignee
University of Manchester
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Manchester filed Critical University of Manchester
Priority to GBGB1900832.5A priority Critical patent/GB201900832D0/en
Publication of GB201900832D0 publication Critical patent/GB201900832D0/en
Priority to PCT/GB2020/050117 priority patent/WO2020152449A1/en
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/311Phthalocyanine

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Thin Film Transistor (AREA)
GBGB1900832.5A 2019-01-21 2019-01-21 Organic field-effect transistors Ceased GB201900832D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB1900832.5A GB201900832D0 (en) 2019-01-21 2019-01-21 Organic field-effect transistors
PCT/GB2020/050117 WO2020152449A1 (en) 2019-01-21 2020-01-20 Organic field-effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1900832.5A GB201900832D0 (en) 2019-01-21 2019-01-21 Organic field-effect transistors

Publications (1)

Publication Number Publication Date
GB201900832D0 true GB201900832D0 (en) 2019-03-13

Family

ID=65656003

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1900832.5A Ceased GB201900832D0 (en) 2019-01-21 2019-01-21 Organic field-effect transistors

Country Status (2)

Country Link
GB (1) GB201900832D0 (en)
WO (1) WO2020152449A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113711373A (en) * 2019-05-02 2021-11-26 美光科技公司 Semiconductor device including transistor including electrolyte, electronic system, and related methods

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112531113B (en) * 2020-12-14 2023-04-07 电子科技大学 Nitrogen dioxide sensor based on organic field effect transistor and preparation method thereof
CN112531115B (en) * 2020-12-14 2022-08-02 电子科技大学 A kind of nitrogen dioxide sensor based on organic field effect transistor and preparation method thereof
CN112666239A (en) * 2021-01-13 2021-04-16 长春工业大学 Preparation method of OFET gas sensor based on polymer blend dielectric layer
CN113147106A (en) * 2021-03-22 2021-07-23 长春工业大学 Preparation method of room temperature gas sensor with high moisture resistance and stability

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7632703B2 (en) * 2005-12-22 2009-12-15 Xerox Corporation Organic thin-film transistors
EP2790238B1 (en) * 2013-04-10 2018-08-22 Novaled GmbH Organic field effect transistor and method for production
WO2017064243A1 (en) * 2015-10-15 2017-04-20 Basf Se Use of phthalocyanine compounds with aryl or hetaryl substituents in gas sensors
US10559754B2 (en) * 2016-05-19 2020-02-11 The Regents Of The University Of California Organic semiconductor solution blends for switching ambipolar transport to N-type transport

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113711373A (en) * 2019-05-02 2021-11-26 美光科技公司 Semiconductor device including transistor including electrolyte, electronic system, and related methods

Also Published As

Publication number Publication date
WO2020152449A1 (en) 2020-07-30

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)