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GB2019091B - Semiconductor store - Google Patents

Semiconductor store

Info

Publication number
GB2019091B
GB2019091B GB7912246A GB7912246A GB2019091B GB 2019091 B GB2019091 B GB 2019091B GB 7912246 A GB7912246 A GB 7912246A GB 7912246 A GB7912246 A GB 7912246A GB 2019091 B GB2019091 B GB 2019091B
Authority
GB
United Kingdom
Prior art keywords
semiconductor store
semiconductor
store
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7912246A
Other versions
GB2019091A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB2019091A publication Critical patent/GB2019091A/en
Application granted granted Critical
Publication of GB2019091B publication Critical patent/GB2019091B/en
Expired legal-status Critical Current

Links

Classifications

    • H10W20/4451—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10P95/00—
    • H10W20/066—
GB7912246A 1978-04-11 1979-04-06 Semiconductor store Expired GB2019091B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2815605A DE2815605C3 (en) 1978-04-11 1978-04-11 Semiconductor memory with control lines of high conductivity

Publications (2)

Publication Number Publication Date
GB2019091A GB2019091A (en) 1979-10-24
GB2019091B true GB2019091B (en) 1982-07-07

Family

ID=6036700

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7912246A Expired GB2019091B (en) 1978-04-11 1979-04-06 Semiconductor store

Country Status (3)

Country Link
DE (1) DE2815605C3 (en)
FR (1) FR2423030A1 (en)
GB (1) GB2019091B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364166A (en) 1979-03-01 1982-12-21 International Business Machines Corporation Semiconductor integrated circuit interconnections

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
DE2926874A1 (en) * 1979-07-03 1981-01-22 Siemens Ag METHOD FOR PRODUCING LOW-RESISTANT, DIFFUSED AREAS IN SILICON GATE TECHNOLOGY
US4285761A (en) * 1980-06-30 1981-08-25 International Business Machines Corporation Process for selectively forming refractory metal silicide layers on semiconductor devices
JPS5832789B2 (en) * 1980-07-18 1983-07-15 富士通株式会社 semiconductor memory
JPS5780739A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
DE3046218C2 (en) * 1980-12-08 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Method for producing a single transistor memory cell using double silicon technology
US4403394A (en) * 1980-12-17 1983-09-13 International Business Machines Corporation Formation of bit lines for ram device
JPS57159055A (en) * 1981-03-25 1982-10-01 Toshiba Corp Manufacture of semiconductor device
DE3250096C2 (en) * 1981-05-27 1997-09-11 Hitachi Ltd Semiconductor dynamic random access memory
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
JPS57207556A (en) * 1981-06-12 1982-12-20 Nippon Denso Co Ltd Electric dust collector
JPS5873156A (en) * 1981-10-28 1983-05-02 Hitachi Ltd Semiconductor device
JPS5893347A (en) * 1981-11-30 1983-06-03 Toshiba Corp Metal oxide semiconductor type semiconductor device and its manufacture
DE3304651A1 (en) * 1983-02-10 1984-08-16 Siemens AG, 1000 Berlin und 8000 München DYNAMIC SEMICONDUCTOR MEMORY CELL WITH OPTIONAL ACCESS (DRAM) AND METHOD FOR THEIR PRODUCTION
GB2139418A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices and conductors therefor
JPS60136337A (en) * 1983-12-22 1985-07-19 モノリシツク・メモリ−ズ・インコ−ポレイテツド Method of forming hillock suppressing layer in double layer process and its structure
JPS60134466A (en) * 1983-12-23 1985-07-17 Hitachi Ltd Semiconductor device and manufacture thereof
JPS60263455A (en) * 1984-06-04 1985-12-26 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Polysilicon structure
KR940002772B1 (en) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 Semiconductor integrated circuit device and manufacturing method thereof
US5362662A (en) * 1989-08-11 1994-11-08 Ricoh Company, Ltd. Method for producing semiconductor memory device having a planar cell structure
JP2869090B2 (en) * 1989-08-11 1999-03-10 株式会社リコー Semiconductor memory device and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2164745C3 (en) * 1971-12-27 1981-07-30 geb. Avvakumova Evdokija Kirillovna Moskva Šergold Semiconductor diode matrix
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364166A (en) 1979-03-01 1982-12-21 International Business Machines Corporation Semiconductor integrated circuit interconnections

Also Published As

Publication number Publication date
DE2815605A1 (en) 1979-10-18
FR2423030A1 (en) 1979-11-09
DE2815605B2 (en) 1980-06-26
GB2019091A (en) 1979-10-24
DE2815605C3 (en) 1981-04-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee