GB201711138D0 - Single photon detector - Google Patents
Single photon detectorInfo
- Publication number
- GB201711138D0 GB201711138D0 GBGB1711138.6A GB201711138A GB201711138D0 GB 201711138 D0 GB201711138 D0 GB 201711138D0 GB 201711138 A GB201711138 A GB 201711138A GB 201711138 D0 GB201711138 D0 GB 201711138D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- single photon
- photon detector
- detector
- photon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1711138.6A GB201711138D0 (en) | 2017-07-11 | 2017-07-11 | Single photon detector |
| PCT/GB2018/051972 WO2019012276A1 (en) | 2017-07-11 | 2018-07-11 | Single photon detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1711138.6A GB201711138D0 (en) | 2017-07-11 | 2017-07-11 | Single photon detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB201711138D0 true GB201711138D0 (en) | 2017-08-23 |
Family
ID=59676711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1711138.6A Ceased GB201711138D0 (en) | 2017-07-11 | 2017-07-11 | Single photon detector |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB201711138D0 (en) |
| WO (1) | WO2019012276A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11424376B2 (en) * | 2019-04-09 | 2022-08-23 | Peng DU | Superlattice absorber for detector |
| GB201916784D0 (en) * | 2019-11-18 | 2020-01-01 | Univ Sheffield | An avalanche photodiode structure |
| JP2023140824A (en) * | 2022-03-23 | 2023-10-05 | 浙江焜騰紅外科技有限公司 | Type 2 superlattice photodetector with small absorption region thickness |
-
2017
- 2017-07-11 GB GBGB1711138.6A patent/GB201711138D0/en not_active Ceased
-
2018
- 2018-07-11 WO PCT/GB2018/051972 patent/WO2019012276A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019012276A1 (en) | 2019-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AT | Applications terminated before publication under section 16(1) |