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GB201517167D0 - Growing epitaxial 3C-SiC on single -crystal silicon - Google Patents

Growing epitaxial 3C-SiC on single -crystal silicon

Info

Publication number
GB201517167D0
GB201517167D0 GBGB1517167.1A GB201517167A GB201517167D0 GB 201517167 D0 GB201517167 D0 GB 201517167D0 GB 201517167 A GB201517167 A GB 201517167A GB 201517167 D0 GB201517167 D0 GB 201517167D0
Authority
GB
United Kingdom
Prior art keywords
sic
crystal silicon
growing epitaxial
epitaxial
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1517167.1A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Warwick
Original Assignee
University of Warwick
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Warwick filed Critical University of Warwick
Priority to GBGB1517167.1A priority Critical patent/GB201517167D0/en
Publication of GB201517167D0 publication Critical patent/GB201517167D0/en
Priority to CN201680042627.0A priority patent/CN107849730A/en
Priority to KR1020187002169A priority patent/KR20180042228A/en
Priority to RU2018105878A priority patent/RU2764040C2/en
Priority to US15/743,879 priority patent/US10907273B2/en
Priority to AU2016296147A priority patent/AU2016296147A1/en
Priority to EP16753686.1A priority patent/EP3325695A1/en
Priority to JP2017566293A priority patent/JP2018522412A/en
Priority to PCT/GB2016/052244 priority patent/WO2017013445A1/en
Priority to TW105123538A priority patent/TW201716647A/en
Ceased legal-status Critical Current

Links

GBGB1517167.1A 2015-07-23 2015-09-29 Growing epitaxial 3C-SiC on single -crystal silicon Ceased GB201517167D0 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GBGB1517167.1A GB201517167D0 (en) 2015-09-29 2015-09-29 Growing epitaxial 3C-SiC on single -crystal silicon
PCT/GB2016/052244 WO2017013445A1 (en) 2015-07-23 2016-07-22 Growing expitaxial 3c-sic on single-crystal silicon
US15/743,879 US10907273B2 (en) 2015-07-23 2016-07-22 Growing epitaxial 3C-SiC on single-crystal silicon
KR1020187002169A KR20180042228A (en) 2015-07-23 2016-07-22 Growing epitaxial 3C-SiC on single-crystal silicon
RU2018105878A RU2764040C2 (en) 2015-07-23 2016-07-22 Growing epitaxial 3c-sic on monocrystalline silicon
CN201680042627.0A CN107849730A (en) 2015-07-23 2016-07-22 Growth of epitaxial 3C‑SiC on single crystal silicon
AU2016296147A AU2016296147A1 (en) 2015-07-23 2016-07-22 Growing expitaxial 3C-siC on single-crystal silicon
EP16753686.1A EP3325695A1 (en) 2015-07-23 2016-07-22 Growing expitaxial 3c-sic on single-crystal silicon
JP2017566293A JP2018522412A (en) 2015-07-23 2016-07-22 Growth of epitaxial 3C-SiC on single crystal silicon
TW105123538A TW201716647A (en) 2015-07-23 2016-07-25 Growth of triple C structure tantalum carbide (3C-SiC) epitaxial growth on single crystal germanium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1517167.1A GB201517167D0 (en) 2015-09-29 2015-09-29 Growing epitaxial 3C-SiC on single -crystal silicon

Publications (1)

Publication Number Publication Date
GB201517167D0 true GB201517167D0 (en) 2015-11-11

Family

ID=54544252

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1517167.1A Ceased GB201517167D0 (en) 2015-07-23 2015-09-29 Growing epitaxial 3C-SiC on single -crystal silicon

Country Status (1)

Country Link
GB (1) GB201517167D0 (en)

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)