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GB201420038D0 - Gate boost - Google Patents

Gate boost

Info

Publication number
GB201420038D0
GB201420038D0 GBGB1420038.0A GB201420038A GB201420038D0 GB 201420038 D0 GB201420038 D0 GB 201420038D0 GB 201420038 A GB201420038 A GB 201420038A GB 201420038 D0 GB201420038 D0 GB 201420038D0
Authority
GB
United Kingdom
Prior art keywords
gate boost
boost
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB1420038.0A
Other versions
GB2532215A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maschinenfabrik Reinhausen GmbH
Original Assignee
Amantys Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amantys Ltd filed Critical Amantys Ltd
Priority to GB1420038.0A priority Critical patent/GB2532215A/en
Publication of GB201420038D0 publication Critical patent/GB201420038D0/en
Priority to EP15790971.4A priority patent/EP3219010B1/en
Priority to JP2017525372A priority patent/JP2017534237A/en
Priority to PCT/EP2015/076003 priority patent/WO2016075056A1/en
Priority to US15/515,982 priority patent/US10199916B2/en
Priority to KR1020177015887A priority patent/KR102404605B1/en
Priority to CN201580061190.0A priority patent/CN107112887B/en
Publication of GB2532215A publication Critical patent/GB2532215A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
GB1420038.0A 2014-11-11 2014-11-11 Gate boost Withdrawn GB2532215A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB1420038.0A GB2532215A (en) 2014-11-11 2014-11-11 Gate boost
EP15790971.4A EP3219010B1 (en) 2014-11-11 2015-11-09 Resistor emulation and gate boost
JP2017525372A JP2017534237A (en) 2014-11-11 2015-11-09 Resistor emulation and gate boost
PCT/EP2015/076003 WO2016075056A1 (en) 2014-11-11 2015-11-09 Resistor emulation and gate boost
US15/515,982 US10199916B2 (en) 2014-11-11 2015-11-09 Resistor emulation and gate boost
KR1020177015887A KR102404605B1 (en) 2014-11-11 2015-11-09 Resistor emulation and gate boost
CN201580061190.0A CN107112887B (en) 2014-11-11 2015-11-09 Resistor Simulation and Gate Boost

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1420038.0A GB2532215A (en) 2014-11-11 2014-11-11 Gate boost

Publications (2)

Publication Number Publication Date
GB201420038D0 true GB201420038D0 (en) 2014-12-24
GB2532215A GB2532215A (en) 2016-05-18

Family

ID=52118309

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1420038.0A Withdrawn GB2532215A (en) 2014-11-11 2014-11-11 Gate boost

Country Status (1)

Country Link
GB (1) GB2532215A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109565272A (en) * 2016-06-16 2019-04-02 法雷奥西门子新能源汽车(德国)有限公司 Power semiconductor circuits
CN110350769A (en) * 2018-04-05 2019-10-18 株式会社电装 Driving circuit for switch
CN111313874A (en) * 2020-03-18 2020-06-19 上海海事大学 Current detection device for SiC MOSFET and short-circuit protection method
CN114977106A (en) * 2017-09-07 2022-08-30 英飞凌科技奥地利有限公司 Circuit and method for protecting a power switch

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201609907D0 (en) 2016-06-07 2016-07-20 Rolls Royce Plc Method for estimating power system health
WO2018225083A1 (en) * 2017-06-08 2018-12-13 INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT Madras) Digitally controlled switched current source active gate driver for silicon carbide mosfet with line current sensing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112007002874T5 (en) * 2006-11-29 2010-02-18 Continental Automotive Systems US, Inc., Auburn Hills Operation and control of insulated gate bipolar transistors in high speed failure mode situations
FI120812B (en) * 2007-04-30 2010-03-15 Vacon Oyj Power Semiconductor Switch Control
GB2497967B (en) * 2011-12-23 2018-02-21 Reinhausen Maschf Scheubeck Fault-tolerant control systems
JP5761215B2 (en) * 2013-01-21 2015-08-12 株式会社デンソー Gate drive circuit
CN103973277B (en) * 2013-02-05 2017-06-09 通用电气公司 The short-circuit protection circuit and method of insulated gate bipolar transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109565272A (en) * 2016-06-16 2019-04-02 法雷奥西门子新能源汽车(德国)有限公司 Power semiconductor circuits
CN114977106A (en) * 2017-09-07 2022-08-30 英飞凌科技奥地利有限公司 Circuit and method for protecting a power switch
CN110350769A (en) * 2018-04-05 2019-10-18 株式会社电装 Driving circuit for switch
CN110350769B (en) * 2018-04-05 2024-03-26 株式会社电装 Driving circuit for switch
CN111313874A (en) * 2020-03-18 2020-06-19 上海海事大学 Current detection device for SiC MOSFET and short-circuit protection method

Also Published As

Publication number Publication date
GB2532215A (en) 2016-05-18

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Legal Events

Date Code Title Description
COOA Change in applicant's name or ownership of the application

Owner name: MASCHINENFABRIK REINHAUSEN GMBH

Free format text: FORMER OWNER: AMANTYS LTD

WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)