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GB2011710A - Semiconductor structures - Google Patents

Semiconductor structures

Info

Publication number
GB2011710A
GB2011710A GB7848675A GB7848675A GB2011710A GB 2011710 A GB2011710 A GB 2011710A GB 7848675 A GB7848675 A GB 7848675A GB 7848675 A GB7848675 A GB 7848675A GB 2011710 A GB2011710 A GB 2011710A
Authority
GB
United Kingdom
Prior art keywords
transistor
groove
region
planar
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7848675A
Other versions
GB2011710B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Company PLC
Original Assignee
General Electric Company PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company PLC filed Critical General Electric Company PLC
Priority to GB7848675A priority Critical patent/GB2011710B/en
Publication of GB2011710A publication Critical patent/GB2011710A/en
Application granted granted Critical
Publication of GB2011710B publication Critical patent/GB2011710B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H03K19/09445—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors with active depletion transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A semiconductor structure for use in logic circuits comprising a planar insulated- gate field-effect transistor (5- 13) and at least one V-groove insulated- gate field-effect transistor 23-33 formed on a common substrate (1, 3) the drain of the V-groove transistor being constituted by a region (23 or 25) of the same conductivity type as the substrate formed within the drain region (7) of the planar transistor so that the substrate forms the V-groove transistor source region and part (31 or 33) of the drain region of the planar transistor forms the V-groove transistor channel region. The structure is adapted for use as a so- called integrated-injection logic (I<2>L) structure. <IMAGE>
GB7848675A 1977-12-28 1978-12-15 Semiconductor structures Expired GB2011710B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7848675A GB2011710B (en) 1977-12-28 1978-12-15 Semiconductor structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB5393177 1977-12-28
GB7848675A GB2011710B (en) 1977-12-28 1978-12-15 Semiconductor structures

Publications (2)

Publication Number Publication Date
GB2011710A true GB2011710A (en) 1979-07-11
GB2011710B GB2011710B (en) 1982-04-07

Family

ID=26267384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7848675A Expired GB2011710B (en) 1977-12-28 1978-12-15 Semiconductor structures

Country Status (1)

Country Link
GB (1) GB2011710B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130790A (en) * 1982-10-26 1984-06-06 Plessey Co Plc Integrated injection logic device
EP0158401A1 (en) * 1984-04-09 1985-10-16 Koninklijke Philips Electronics N.V. Semiconductor device comprising insulated gate field effect transistors
DE19501556A1 (en) * 1994-01-20 1995-07-27 Mitsubishi Electric Corp Semiconductor component with trench structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130790A (en) * 1982-10-26 1984-06-06 Plessey Co Plc Integrated injection logic device
EP0158401A1 (en) * 1984-04-09 1985-10-16 Koninklijke Philips Electronics N.V. Semiconductor device comprising insulated gate field effect transistors
US4695865A (en) * 1984-04-09 1987-09-22 U.S. Philips Corporation Integrated logic circuit having insulated gate field effect transistors
DE19501556A1 (en) * 1994-01-20 1995-07-27 Mitsubishi Electric Corp Semiconductor component with trench structure
US5541425A (en) * 1994-01-20 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having trench structure
US5795792A (en) * 1994-01-20 1998-08-18 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a trench structure
DE19501556C2 (en) * 1994-01-20 1999-03-04 Mitsubishi Electric Corp Semiconductor device with a trench structure, use of a semiconductor device with a trench structure and method for producing a semiconductor device with a trench structure

Also Published As

Publication number Publication date
GB2011710B (en) 1982-04-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee