GB201112144D0 - Switching circuits - Google Patents
Switching circuitsInfo
- Publication number
- GB201112144D0 GB201112144D0 GBGB1112144.9A GB201112144A GB201112144D0 GB 201112144 D0 GB201112144 D0 GB 201112144D0 GB 201112144 A GB201112144 A GB 201112144A GB 201112144 D0 GB201112144 D0 GB 201112144D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- switching circuits
- circuits
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1112144.9A GB201112144D0 (en) | 2011-07-15 | 2011-07-15 | Switching circuits |
| PCT/GB2012/051673 WO2013011289A2 (en) | 2011-07-15 | 2012-07-13 | Switching circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1112144.9A GB201112144D0 (en) | 2011-07-15 | 2011-07-15 | Switching circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB201112144D0 true GB201112144D0 (en) | 2011-08-31 |
Family
ID=44586622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1112144.9A Ceased GB201112144D0 (en) | 2011-07-15 | 2011-07-15 | Switching circuits |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB201112144D0 (en) |
| WO (1) | WO2013011289A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114839499A (en) * | 2022-03-02 | 2022-08-02 | 西安电子科技大学 | Power device junction temperature on-line monitoring system based on dynamic threshold voltage |
| CN116015268A (en) * | 2021-10-22 | 2023-04-25 | 上海岭芯微电子有限公司 | A switch circuit based on power MOSFET |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6470284B2 (en) * | 2013-11-15 | 2019-02-13 | 日本テキサス・インスツルメンツ合同会社 | Method and circuit element for controlling a depletion mode transistor |
| US9479159B2 (en) * | 2014-08-29 | 2016-10-25 | Infineon Technologies Austria Ag | System and method for a switch having a normally-on transistor and a normally-off transistor |
| US10290566B2 (en) * | 2014-09-23 | 2019-05-14 | Infineon Technologies Austria Ag | Electronic component |
| KR102745458B1 (en) * | 2017-09-07 | 2024-12-20 | 비식 테크놀로지스 엘티디. | High-voltage fast switching devices |
| CN209676204U (en) * | 2019-05-14 | 2019-11-22 | 湖南大学 | Series DC protection switch based on SiC JFET |
| KR102726797B1 (en) * | 2019-06-17 | 2024-11-05 | 현대자동차주식회사 | System and method for controlling the driving of switching element for current converter |
| CN110365324B (en) * | 2019-07-22 | 2024-03-15 | 无锡安趋电子有限公司 | Grid driving circuit of power tube |
| EP3799307B1 (en) * | 2019-09-24 | 2024-04-17 | ABB Schweiz AG | System for providing bi-directional power flow and power conditioning for low to high-voltage applications |
| CN110830015B (en) * | 2019-11-08 | 2025-08-19 | 清华大学 | Drive protection circuit of power semiconductor element and control method thereof |
| CN112636455B (en) * | 2020-12-29 | 2025-12-23 | 日晷科技(上海)有限公司 | Power supply device for conference terminal and conference terminal equipment |
| CN113054956A (en) * | 2021-01-15 | 2021-06-29 | 清华大学 | Pulse decomposition method for silicon carbide MOSFET switch transient process frequency domain analysis |
| KR102872408B1 (en) | 2021-10-29 | 2025-10-17 | 비식 테크놀로지스 엘티디. | Power switch containing a normally-on transistor |
| CN114614803B (en) * | 2022-05-11 | 2022-08-05 | 合肥安赛思半导体有限公司 | Multi-stage SiC-MOSFET drive circuit and control method |
| EP4333305A1 (en) * | 2022-08-31 | 2024-03-06 | Nexperia B.V. | A voltage gate driver for a semiconductor-based transistor, as well as a power switch device, and a corresponding method |
| CN117040512B (en) * | 2023-10-10 | 2024-02-06 | 广东致能科技有限公司 | Driving circuit of depletion transistor |
| US20250317138A1 (en) * | 2024-04-05 | 2025-10-09 | Semiconductor Components Industries, Llc | Power switching device operable to reduce on-resistance and extend short circuit withstand time |
| CN118739813B (en) * | 2024-06-21 | 2025-06-03 | 北京怀柔实验室 | Driving circuit and driving method of power device and power device |
| CN118611640B (en) * | 2024-06-21 | 2025-05-27 | 北京怀柔实验室 | Drive protection circuit, drive protection method and application of power semiconductor device |
| CN119727681B (en) * | 2024-12-20 | 2025-12-05 | 西安交通大学 | A protection circuit, device, and method for a high-voltage silicon carbide MOSFET. |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006029928B3 (en) * | 2006-06-29 | 2007-09-06 | Siemens Ag | Electronic switching device for switching high electric current, has isolating unit connected between control connection of switching unit and load supply of another switching unit, where isolation unit decouples switching units |
| FR2911736B1 (en) * | 2007-01-23 | 2009-03-20 | Schneider Toshiba Inverter | DEVICE FOR CONTROLLING A POWER SWITCH AND DRIVER COMPRISING SUCH A DIPOSITIVE. |
-
2011
- 2011-07-15 GB GBGB1112144.9A patent/GB201112144D0/en not_active Ceased
-
2012
- 2012-07-13 WO PCT/GB2012/051673 patent/WO2013011289A2/en not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116015268A (en) * | 2021-10-22 | 2023-04-25 | 上海岭芯微电子有限公司 | A switch circuit based on power MOSFET |
| CN114839499A (en) * | 2022-03-02 | 2022-08-02 | 西安电子科技大学 | Power device junction temperature on-line monitoring system based on dynamic threshold voltage |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013011289A2 (en) | 2013-01-24 |
| WO2013011289A3 (en) | 2013-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AT | Applications terminated before publication under section 16(1) |