GB2010010A - Charge couple devices - Google Patents
Charge couple devicesInfo
- Publication number
- GB2010010A GB2010010A GB7846127A GB7846127A GB2010010A GB 2010010 A GB2010010 A GB 2010010A GB 7846127 A GB7846127 A GB 7846127A GB 7846127 A GB7846127 A GB 7846127A GB 2010010 A GB2010010 A GB 2010010A
- Authority
- GB
- United Kingdom
- Prior art keywords
- register section
- electrode
- output means
- input
- relation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/452—Input structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/454—Output structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
A bulk-channel charge coupled device, wherein the input or output means whereby electric charge is injected into or extracted from the register section of the device is constructed so as to be capable of handling charge packets at least as great as those that can be handled by the register section of the device without requiring input or output means control potentials differing from those utilised by the register section. For the input means this is achieved by appropriately dimensioning the first register section electrode (21') and the adjacent input means electrode (29) in relation to the buried channel (37) and the other register section electrodes (21, 23, 25). For the output means this is achieved by appropriately dimensioning the final register section electrode (25') in relation to the other register section electrodes (21, 23, 25) and the output means electrode (31) adjacent the final register section electrode (25'). <IMAGE>
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7846127A GB2010010B (en) | 1977-10-19 | 1978-11-27 | Charge coupled devices |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4354777 | 1977-10-19 | ||
| GB7846127A GB2010010B (en) | 1977-10-19 | 1978-11-27 | Charge coupled devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2010010A true GB2010010A (en) | 1979-06-20 |
| GB2010010B GB2010010B (en) | 1982-02-17 |
Family
ID=26265189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7846127A Expired GB2010010B (en) | 1977-10-19 | 1978-11-27 | Charge coupled devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2010010B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2511545A1 (en) * | 1981-06-05 | 1983-02-18 | Philips Nv | SEMICONDUCTOR DEVICE COMPRISING A FOUR-PHASE CHARGE COUPLING DEVICE |
| US4546368A (en) * | 1981-09-17 | 1985-10-08 | Nippon Electric Co., Ltd. | Charge transfer device having a precisely controlled injection rate |
| US4728622A (en) * | 1984-02-23 | 1988-03-01 | Nec Corporation | Charge transfer device having a width changing channel |
| US4839911A (en) * | 1986-04-18 | 1989-06-13 | Thomson-Lsf | Charger transfer shift register with voltage sensing device using a floating-potential diode |
-
1978
- 1978-11-27 GB GB7846127A patent/GB2010010B/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2511545A1 (en) * | 1981-06-05 | 1983-02-18 | Philips Nv | SEMICONDUCTOR DEVICE COMPRISING A FOUR-PHASE CHARGE COUPLING DEVICE |
| US4546368A (en) * | 1981-09-17 | 1985-10-08 | Nippon Electric Co., Ltd. | Charge transfer device having a precisely controlled injection rate |
| US4728622A (en) * | 1984-02-23 | 1988-03-01 | Nec Corporation | Charge transfer device having a width changing channel |
| US4782374A (en) * | 1984-02-23 | 1988-11-01 | Nec Corporation | Charge transfer device having a width changing channel |
| US4839911A (en) * | 1986-04-18 | 1989-06-13 | Thomson-Lsf | Charger transfer shift register with voltage sensing device using a floating-potential diode |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2010010B (en) | 1982-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PE20 | Patent expired after termination of 20 years |
Effective date: 19981126 |