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GB2008318A - Integrated logic circuits - Google Patents

Integrated logic circuits

Info

Publication number
GB2008318A
GB2008318A GB7844334A GB7844334A GB2008318A GB 2008318 A GB2008318 A GB 2008318A GB 7844334 A GB7844334 A GB 7844334A GB 7844334 A GB7844334 A GB 7844334A GB 2008318 A GB2008318 A GB 2008318A
Authority
GB
United Kingdom
Prior art keywords
transistor
inverter
auxiliary
integrated logic
incorporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7844334A
Other versions
GB2008318B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7712649A external-priority patent/NL7712649A/en
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2008318A publication Critical patent/GB2008318A/en
Application granted granted Critical
Publication of GB2008318B publication Critical patent/GB2008318B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)

Abstract

An integrated logic circuit in which the gates have a current source which is connected to the base of a planar inverter transistor (33, 34, 22) and several Schottky diodes (16) which are integrated in or on the collector region (22) of the transistor. In the inverter transistor (33, 34, 22) an auxiliary transistor (31, 34, 80) is incorporated having a collector (80) which is provided in the base zone (34) of the inverter transistor and which is preferably short-circuited with said base zone (34). A lateral and/or vertical complementary auxiliary transistor (34, 31, 71, 29) is preferably also incorporated. The auxiliary transistors restrict the extent to which the conductive inverter transistors (33, 34, 22) become saturated and minimize the storage of free charge carriers. <IMAGE>
GB7844334A 1977-11-17 1978-11-14 Integrated logic circuits Expired GB2008318B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7712649A NL7712649A (en) 1977-11-17 1977-11-17 INTEGRATED CIRCUIT.
NL7800407A NL7800407A (en) 1977-11-17 1978-01-13 INTEGRATED LOGICAL CIRCUIT.

Publications (2)

Publication Number Publication Date
GB2008318A true GB2008318A (en) 1979-05-31
GB2008318B GB2008318B (en) 1982-03-31

Family

ID=26645363

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7844334A Expired GB2008318B (en) 1977-11-17 1978-11-14 Integrated logic circuits

Country Status (10)

Country Link
JP (1) JPS5478988A (en)
BR (1) BR7807497A (en)
CA (1) CA1129973A (en)
CH (1) CH637788A5 (en)
DE (1) DE2848632C2 (en)
ES (1) ES475105A1 (en)
FR (1) FR2409599A1 (en)
GB (1) GB2008318B (en)
IT (1) IT1100262B (en)
NL (1) NL7800407A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161923C (en) * 1969-04-18 1980-03-17 Philips Nv SEMICONDUCTOR DEVICE.
GB1490631A (en) * 1975-01-10 1977-11-02 Plessey Co Ltd Transistor arrangement having low charge storage

Also Published As

Publication number Publication date
NL7800407A (en) 1979-05-21
IT7829768A0 (en) 1978-11-14
BR7807497A (en) 1979-07-17
IT1100262B (en) 1985-09-28
DE2848632A1 (en) 1979-05-23
JPS5478988A (en) 1979-06-23
GB2008318B (en) 1982-03-31
FR2409599B1 (en) 1985-01-18
CA1129973A (en) 1982-08-17
CH637788A5 (en) 1983-08-15
DE2848632C2 (en) 1985-12-19
FR2409599A1 (en) 1979-06-15
JPS5719866B2 (en) 1982-04-24
ES475105A1 (en) 1979-04-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921114