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GB2007021A - High temperature amorphous semiconductor member and method of making it - Google Patents

High temperature amorphous semiconductor member and method of making it

Info

Publication number
GB2007021A
GB2007021A GB7839177A GB7839177A GB2007021A GB 2007021 A GB2007021 A GB 2007021A GB 7839177 A GB7839177 A GB 7839177A GB 7839177 A GB7839177 A GB 7839177A GB 2007021 A GB2007021 A GB 2007021A
Authority
GB
United Kingdom
Prior art keywords
matrix
amorphous semiconductor
carbon
boron
modifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7839177A
Other versions
GB2007021B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/841,369 external-priority patent/US4177474A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of GB2007021A publication Critical patent/GB2007021A/en
Application granted granted Critical
Publication of GB2007021B publication Critical patent/GB2007021B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Glass Compositions (AREA)

Abstract

An amorphous semiconductor member capable of withstanding high temperatures and having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality of elements, including one of the low atomic weight elements boron, carbon, germanium, nitrogen or oxygen, forming a host matrix having structural configurations with local order and electronic configurations providing an energy gap and an electrical activation energy. Added to the matrix is a modifier material such as a transition metal or rare earth element, having orbitals which interact with the matrix to form electronic states in the energy gap which modify substantially the electronic configurations of the matrix. When the matrix is formed from boron, carbon, silicon or germanium boron or carbon may be the modifier. The forming of the matrix and addition of the modifier material is preferably done by co- sputtering.
GB7839177A 1977-10-12 1978-10-03 High temperature amorphous semiconductor member and method of making the same Expired GB2007021B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/841,369 US4177474A (en) 1977-05-18 1977-10-12 High temperature amorphous semiconductor member and method of making the same

Publications (2)

Publication Number Publication Date
GB2007021A true GB2007021A (en) 1979-05-10
GB2007021B GB2007021B (en) 1982-05-06

Family

ID=25284694

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7839177A Expired GB2007021B (en) 1977-10-12 1978-10-03 High temperature amorphous semiconductor member and method of making the same

Country Status (7)

Country Link
JP (1) JPS5464981A (en)
AU (1) AU523107B2 (en)
CA (1) CA1123525A (en)
DE (1) DE2844070A1 (en)
ES (1) ES474153A1 (en)
FR (1) FR2454186A1 (en)
GB (1) GB2007021B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490018A1 (en) * 1980-09-09 1982-03-12 Energy Conversion Devices Inc METHOD AND DEVICE FOR CALIBRATING BAND INTERVALS OF AMORPHOUS SEMICONDUCTOR ALLOYS AND ALLOYS OBTAINED
EP0058543A1 (en) * 1981-02-12 1982-08-25 Energy Conversion Devices, Inc. Photoresponsive amorphous semiconductor alloys
EP0053402A3 (en) * 1980-12-03 1983-03-30 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
GB2124826A (en) * 1982-04-28 1984-02-22 Energy Conversion Devices Inc Amorphous semiconductor materials
EP0139409A1 (en) * 1983-08-26 1985-05-02 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
EP0111247A3 (en) * 1982-12-14 1986-08-13 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Photovoltaic device
EP0070509A3 (en) * 1981-07-17 1986-08-27 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor and amorphous silicon photovoltaic device
US9564583B2 (en) * 2003-03-20 2017-02-07 Sony Corporation Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPH03188682A (en) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd High potential amorphous semiconductor/amorphous silicon heterojunction photovoltaic element
JPS5814583A (en) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd Amorphous semiconductor and amorphous semiconductor- amorphous silicon heterojunction photo voltaic element
EP0072221B1 (en) * 1981-08-07 1987-11-11 The British Petroleum Company p.l.c. Non-volatile electrically programmable memory device
JPS62162366A (en) * 1981-09-17 1987-07-18 Semiconductor Energy Lab Co Ltd Composite having carbon coat
JPH07105507B2 (en) * 1982-02-25 1995-11-13 プラズマ・フィジクス・コ−ポレ−ション Photovoltaic device
JPS5957407A (en) * 1982-09-27 1984-04-03 Sanyo Electric Co Ltd Photovoltaic device
JPS58180074A (en) * 1983-03-28 1983-10-21 Shunpei Yamazaki Photoelectric conversion semiconductor device
ES8602301A1 (en) * 1983-07-18 1985-11-01 Energy Conversion Devices Inc Enhanced narrow band gap alloys for photovoltaic applications.
JPS62162367A (en) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd Composite having carbon coat
JPS6316678A (en) * 1986-12-26 1988-01-23 Shunpei Yamazaki Aphotoelectric converter
JP2648733B2 (en) * 1993-11-18 1997-09-03 プラズマ・フィジクス・コーポレーション Semiconductor device
JPH077168A (en) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd Photoeletcric conversion semiconductor device
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490018A1 (en) * 1980-09-09 1982-03-12 Energy Conversion Devices Inc METHOD AND DEVICE FOR CALIBRATING BAND INTERVALS OF AMORPHOUS SEMICONDUCTOR ALLOYS AND ALLOYS OBTAINED
EP0053402A3 (en) * 1980-12-03 1983-03-30 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
EP0058543A1 (en) * 1981-02-12 1982-08-25 Energy Conversion Devices, Inc. Photoresponsive amorphous semiconductor alloys
EP0070509A3 (en) * 1981-07-17 1986-08-27 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor and amorphous silicon photovoltaic device
GB2124826A (en) * 1982-04-28 1984-02-22 Energy Conversion Devices Inc Amorphous semiconductor materials
EP0111247A3 (en) * 1982-12-14 1986-08-13 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Photovoltaic device
EP0139409A1 (en) * 1983-08-26 1985-05-02 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
US9564583B2 (en) * 2003-03-20 2017-02-07 Sony Corporation Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer

Also Published As

Publication number Publication date
FR2454186A1 (en) 1980-11-07
CA1123525A (en) 1982-05-11
ES474153A1 (en) 1979-10-16
GB2007021B (en) 1982-05-06
DE2844070A1 (en) 1979-04-26
AU4023778A (en) 1980-04-03
DE2844070C2 (en) 1990-02-01
AU523107B2 (en) 1982-07-15
JPS5464981A (en) 1979-05-25
JPS6230512B2 (en) 1987-07-02
FR2454186B1 (en) 1984-08-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921003