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GB2006268A - Preparation of semiconductor films on electrically conductive substrates - Google Patents

Preparation of semiconductor films on electrically conductive substrates

Info

Publication number
GB2006268A
GB2006268A GB7840152A GB7840152A GB2006268A GB 2006268 A GB2006268 A GB 2006268A GB 7840152 A GB7840152 A GB 7840152A GB 7840152 A GB7840152 A GB 7840152A GB 2006268 A GB2006268 A GB 2006268A
Authority
GB
United Kingdom
Prior art keywords
preparation
electrically conductive
conductive substrates
semiconductor films
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7840152A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Queensland UQ
Original Assignee
University of Queensland UQ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Queensland UQ filed Critical University of Queensland UQ
Publication of GB2006268A publication Critical patent/GB2006268A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/619—Amorphous layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10P14/265—
    • H10P14/2923—
    • H10P14/3421—
    • H10P14/3428—
    • H10P14/3432—
    • H10P14/3441—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemically Coating (AREA)
  • Photovoltaic Devices (AREA)

Abstract

This invention relates to the preparation of II-VI and III-V semiconductor films of formula RX on electrically conductive substrates wherein a solution containing as a soluble compound of R and a soluble compound of X is electrolysed using the substrate as the cathode. The semiconductor species on reduction is deposited on the cathode as electrolysis proceeds.
GB7840152A 1977-10-14 1978-10-11 Preparation of semiconductor films on electrically conductive substrates Withdrawn GB2006268A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU205277 1977-10-14
AU278277 1977-12-15
AU402978 1978-04-14

Publications (1)

Publication Number Publication Date
GB2006268A true GB2006268A (en) 1979-05-02

Family

ID=27151417

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7840152A Withdrawn GB2006268A (en) 1977-10-14 1978-10-11 Preparation of semiconductor films on electrically conductive substrates

Country Status (4)

Country Link
DE (1) DE2844712A1 (en)
FR (1) FR2423061A1 (en)
GB (1) GB2006268A (en)
NL (1) NL7810342A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376016A (en) 1981-11-16 1983-03-08 Tdc Technology Development Corporation Baths for electrodeposition of metal chalconide films
US4376682A (en) * 1980-04-07 1983-03-15 Tdc Technology Development Corporation Method for producing smooth coherent metal chalconide films
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
EP0152197A3 (en) * 1984-02-03 1986-04-02 Sohio Commercial Development Co. Thin film heterojunction photovoltaic devices that utilize cd rich hg1-x cdx te and method of electrodeposition of same
US4608750A (en) * 1983-08-01 1986-09-02 Union Oil Company Of California Preparation of photovoltaic device by electrochemical deposition
EP0195152A1 (en) * 1985-03-22 1986-09-24 Siemens Solar Industries L.P. Process of forming a compound semiconductive material
US4626322A (en) * 1983-08-01 1986-12-02 Union Oil Company Of California Photoelectrochemical preparation of a solid-state semiconductor photonic device
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
GB2259098A (en) * 1991-08-30 1993-03-03 Univ Cardiff Electrochemical preparation of single phase lead telluride
GB2400725A (en) * 2003-04-17 2004-10-20 Univ Sheffield Hallam Electrodeposited semiconductors

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell
IL57908A0 (en) * 1979-07-07 1979-11-30 Yeda Res & Dev Photovoltaic materials
US4261802A (en) * 1980-02-21 1981-04-14 Ametek, Inc. Method of making a photovoltaic cell
US4256544A (en) * 1980-04-04 1981-03-17 Bell Telephone Laboratories, Incorporated Method of making metal-chalcogenide photosensitive devices
GB2117775A (en) * 1981-11-25 1983-10-19 Secr Defence Organometallic adducts and their use in the preparation of compound semiconductor materials
AT515522B1 (en) * 2014-08-05 2015-10-15 Happy Plating Gmbh METHOD FOR ELECTROCHEMICAL DEPOSITION OF SEMICONDUCTED MATERIALS AND ELECTROLYTS THEREFOR

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376682A (en) * 1980-04-07 1983-03-15 Tdc Technology Development Corporation Method for producing smooth coherent metal chalconide films
US4376016A (en) 1981-11-16 1983-03-08 Tdc Technology Development Corporation Baths for electrodeposition of metal chalconide films
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
US4608750A (en) * 1983-08-01 1986-09-02 Union Oil Company Of California Preparation of photovoltaic device by electrochemical deposition
US4626322A (en) * 1983-08-01 1986-12-02 Union Oil Company Of California Photoelectrochemical preparation of a solid-state semiconductor photonic device
EP0152197A3 (en) * 1984-02-03 1986-04-02 Sohio Commercial Development Co. Thin film heterojunction photovoltaic devices that utilize cd rich hg1-x cdx te and method of electrodeposition of same
EP0195152A1 (en) * 1985-03-22 1986-09-24 Siemens Solar Industries L.P. Process of forming a compound semiconductive material
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
GB2259098A (en) * 1991-08-30 1993-03-03 Univ Cardiff Electrochemical preparation of single phase lead telluride
GB2259098B (en) * 1991-08-30 1995-01-18 Univ Cardiff Preparation of lead telluride
GB2400725A (en) * 2003-04-17 2004-10-20 Univ Sheffield Hallam Electrodeposited semiconductors
GB2400725B (en) * 2003-04-17 2005-11-16 Univ Sheffield Hallam Electrodeposited semiconductors

Also Published As

Publication number Publication date
DE2844712A1 (en) 1979-04-26
NL7810342A (en) 1979-04-18
FR2423061A1 (en) 1979-11-09

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)