GB2000631B - Improvements relating to semiconductor lasers - Google Patents

Improvements relating to semiconductor lasers

Info

Publication number: GB2000631B
Authority: GB; United Kingdom
Prior art keywords: semiconductor lasers; improvements relating; relating; lasers; semiconductor
Prior art date: 1977-07-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB7827574A

Other versions

GB2000631A (en

Inventor

Michael R Matthews

David H Newman

David R Smith

Alan G Steventon

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Post Office

Original Assignee

Post Office

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-07-01

Filing date

1978-06-22

Publication date

1982-01-20

1978-06-22 Application filed by Post Office filed Critical Post Office

1978-06-22 Priority to GB7827574A priority Critical patent/GB2000631B/en

1979-01-10 Publication of GB2000631A publication Critical patent/GB2000631A/en

1982-01-20 Application granted granted Critical

1982-01-20 Publication of GB2000631B publication Critical patent/GB2000631B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Geometry (AREA)
Lasers (AREA)

GB7827574A 1977-07-01 1978-06-22 Improvements relating to semiconductor lasers Expired GB2000631B (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
GB7827574A GB2000631B (en)	1977-07-01	1978-06-22	Improvements relating to semiconductor lasers

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
GB2766677		1977-07-01
GB7827574A GB2000631B (en)	1977-07-01	1978-06-22	Improvements relating to semiconductor lasers

Publications (2)

Publication Number	Publication Date
GB2000631A GB2000631A (en)	1979-01-10
GB2000631B true GB2000631B (en)	1982-01-20

Family

ID=26258936

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB7827574A Expired GB2000631B (en)	1977-07-01	1978-06-22	Improvements relating to semiconductor lasers

Country Status (1)

Country	Link
GB (1)	GB2000631B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2156585B (en) *	1984-03-16	1987-10-21	Hitachi Ltd	Light-emitting device electrode

1978
- 1978-06-22 GB GB7827574A patent/GB2000631B/en not_active Expired

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number	Publication date
GB2000631A (en)	1979-01-10

Publication	Publication Date	Title
JPS5410672A (en)	1979-01-26	Semiconductor
JPS53136963A (en)	1978-11-29	Semiconductor
JPS5396683A (en)	1978-08-24	Semiconductor
ZA781443B (en)	1979-11-28	Improvements relating to 4-acylaminophenyl-ethanolamines
JPS53124982A (en)	1978-10-31	Semiconductor
YU288878A (en)	1982-10-31	Semiconductor arrangement
JPS5419688A (en)	1979-02-14	Semiconductor
JPS5410673A (en)	1979-01-26	Semiconductor
JPS5397384A (en)	1978-08-25	Semiconductor
JPS53135584A (en)	1978-11-27	Semiconductor
JPS5392680A (en)	1978-08-14	Semiconductor laser
JPS5414694A (en)	1979-02-03	Double heteroostructure semiconductor laser
JPS53145581A (en)	1978-12-18	Semiconductor
JPS5387184A (en)	1978-08-01	Semiconductor
JPS53105979A (en)	1978-09-14	Semiconductor
JPS53112683A (en)	1978-10-02	Semiconductor
JPS5438780A (en)	1979-03-23	Semiconductor
JPS53105978A (en)	1978-09-14	Semiconductor
JPS5421168A (en)	1979-02-17	Semiconductor
JPS53115180A (en)	1978-10-07	Semiconductor
GB2000631B (en)	1982-01-20	Improvements relating to semiconductor lasers
JPS53129987A (en)	1978-11-13	Semiconductor
JPS542051A (en)	1979-01-09	Semiconductor
ZA781085B (en)	1979-10-31	Improvements relating to triazolothienodiazepine-1-ones
JPS5413280A (en)	1979-01-31	Semiconductor

Legal Events

Date	Code	Title	Description
1987-04-15	732	Registration of transactions, instruments or events in the register (sect. 32/1977)
1998-07-15	PE20	Patent expired after termination of 20 years	Effective date: 19980621