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GB2061243B - Method of making semiconductor devices - Google Patents

Method of making semiconductor devices

Info

Publication number
GB2061243B
GB2061243B GB8029199A GB8029199A GB2061243B GB 2061243 B GB2061243 B GB 2061243B GB 8029199 A GB8029199 A GB 8029199A GB 8029199 A GB8029199 A GB 8029199A GB 2061243 B GB2061243 B GB 2061243B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
making semiconductor
making
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8029199A
Other versions
GB2061243A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB7931618A external-priority patent/GB2058731A/en
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority to GB8029199A priority Critical patent/GB2061243B/en
Publication of GB2061243A publication Critical patent/GB2061243A/en
Application granted granted Critical
Publication of GB2061243B publication Critical patent/GB2061243B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H10P14/6682—
    • H10P14/6924—
    • H10P14/6334—
    • H10P14/69215—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
GB8029199A 1979-09-12 1980-09-10 Method of making semiconductor devices Expired GB2061243B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8029199A GB2061243B (en) 1979-09-12 1980-09-10 Method of making semiconductor devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7931618A GB2058731A (en) 1979-09-12 1979-09-12 Method of making semiconductor devices
GB8029199A GB2061243B (en) 1979-09-12 1980-09-10 Method of making semiconductor devices

Publications (2)

Publication Number Publication Date
GB2061243A GB2061243A (en) 1981-05-13
GB2061243B true GB2061243B (en) 1983-05-18

Family

ID=26272847

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8029199A Expired GB2061243B (en) 1979-09-12 1980-09-10 Method of making semiconductor devices

Country Status (1)

Country Link
GB (1) GB2061243B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0289246A1 (en) * 1987-04-27 1988-11-02 Seiko Instruments Inc. Method of manufacturing MOS devices
NL9001770A (en) * 1990-08-06 1992-03-02 Philips Nv METHOD FOR APPLYING A SILICON DIOXIDE LAYER TO A SUBSTRATE BY CHEMICAL REACTION FROM THE VAPOR PHASE AT REDUCED PRESSURE (LPCVD).
WO2000063958A1 (en) * 1999-04-16 2000-10-26 Advanced Micro Devices, Inc. In situ, controlled ambient deposition of ono for application to flash eprom
EP1160838B1 (en) * 2000-05-31 2007-12-05 Tokyo Electron Limited Heat treatment system and method
FR3052161B1 (en) * 2016-06-02 2018-06-29 Sgd S.A. METHOD FOR FORMING A BARRIER COATING ON THE SURFACE OF A CONTAINER AND RELATED INSTALLATION

Also Published As

Publication number Publication date
GB2061243A (en) 1981-05-13

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee