GB2044533B - Semiconductor device and method of manufactguring same - Google Patents
Semiconductor device and method of manufactguring sameInfo
- Publication number
- GB2044533B GB2044533B GB8007004A GB8007004A GB2044533B GB 2044533 B GB2044533 B GB 2044533B GB 8007004 A GB8007004 A GB 8007004A GB 8007004 A GB8007004 A GB 8007004A GB 2044533 B GB2044533 B GB 2044533B
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufactguring
- same
- semiconductor device
- semiconductor
- manufactguring same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/6923—
-
- H10P14/662—
-
- H10P14/69433—
-
- H10P95/00—
-
- H10W20/092—
-
- H10P14/6334—
-
- H10P14/6682—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1710079A | 1979-03-05 | 1979-03-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2044533A GB2044533A (en) | 1980-10-15 |
| GB2044533B true GB2044533B (en) | 1983-12-14 |
Family
ID=21780714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8007004A Expired GB2044533B (en) | 1979-03-05 | 1980-02-29 | Semiconductor device and method of manufactguring same |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS55121669A (en) |
| DE (1) | DE3007500A1 (en) |
| FR (1) | FR2451103A1 (en) |
| GB (1) | GB2044533B (en) |
| IT (1) | IT1140645B (en) |
| NL (1) | NL8001310A (en) |
| YU (1) | YU61180A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4542037A (en) * | 1980-04-28 | 1985-09-17 | Fairchild Camera And Instrument Corporation | Laser induced flow of glass bonded materials |
| CA1174285A (en) * | 1980-04-28 | 1984-09-11 | Michelangelo Delfino | Laser induced flow of integrated circuit structure materials |
| JPS581878A (en) * | 1981-06-26 | 1983-01-07 | Fujitsu Ltd | Production of bubble memory device |
| DE3130666A1 (en) * | 1981-08-03 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Method for fabricating integrated MOS field effect transistors having a phosphosilicate glass layer as an intermediary oxide layer |
| DE3131050A1 (en) * | 1981-08-05 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Process for fabricating integrated MOS field effect transistors, employing a surface layer consisting of phosphosilicate glass on the intermediary oxide between polysilicon plane and metal conductor track plane |
| DE3133516A1 (en) * | 1981-08-25 | 1983-03-17 | Siemens AG, 1000 Berlin und 8000 München | Process for rounding the intermediary oxide between the polysilicon plane and metal conductor track plane when fabricating integrated n-type channel MOS field-effect transistors |
| JPS5898934A (en) * | 1981-12-08 | 1983-06-13 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| US4686000A (en) * | 1985-04-02 | 1987-08-11 | Heath Barbara A | Self-aligned contact process |
| JPH088246A (en) * | 1994-06-21 | 1996-01-12 | Nippon Motorola Ltd | Method for forming metal wiring of semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3627598A (en) * | 1970-02-05 | 1971-12-14 | Fairchild Camera Instr Co | Nitride passivation of mesa transistors by phosphovapox lifting |
| US3917495A (en) * | 1970-06-01 | 1975-11-04 | Gen Electric | Method of making improved planar devices including oxide-nitride composite layer |
| US3943621A (en) * | 1974-03-25 | 1976-03-16 | General Electric Company | Semiconductor device and method of manufacture therefor |
| US4005240A (en) * | 1975-03-10 | 1977-01-25 | Aeronutronic Ford Corporation | Germanium device passivation |
| US4273805A (en) * | 1978-06-19 | 1981-06-16 | Rca Corporation | Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer |
-
1980
- 1980-02-19 IT IT20023/80A patent/IT1140645B/en active
- 1980-02-28 DE DE19803007500 patent/DE3007500A1/en not_active Withdrawn
- 1980-02-29 GB GB8007004A patent/GB2044533B/en not_active Expired
- 1980-03-04 JP JP2787680A patent/JPS55121669A/en active Pending
- 1980-03-04 FR FR8004843A patent/FR2451103A1/en not_active Withdrawn
- 1980-03-04 NL NL8001310A patent/NL8001310A/en not_active Application Discontinuation
- 1980-03-05 YU YU00611/80A patent/YU61180A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2044533A (en) | 1980-10-15 |
| DE3007500A1 (en) | 1980-09-18 |
| NL8001310A (en) | 1980-09-09 |
| IT1140645B (en) | 1986-10-01 |
| FR2451103A1 (en) | 1980-10-03 |
| IT8020023A1 (en) | 1981-08-19 |
| IT8020023A0 (en) | 1980-02-19 |
| YU61180A (en) | 1983-02-28 |
| JPS55121669A (en) | 1980-09-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |