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GB1524521A - Growing of crystals - Google Patents

Growing of crystals

Info

Publication number
GB1524521A
GB1524521A GB4479274A GB4479274A GB1524521A GB 1524521 A GB1524521 A GB 1524521A GB 4479274 A GB4479274 A GB 4479274A GB 4479274 A GB4479274 A GB 4479274A GB 1524521 A GB1524521 A GB 1524521A
Authority
GB
United Kingdom
Prior art keywords
plate
passage
order
crystal
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4479274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Metals Research Ltd
Original Assignee
Metals Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metals Research Ltd filed Critical Metals Research Ltd
Priority to GB4479274A priority Critical patent/GB1524521A/en
Priority to DE19752546246 priority patent/DE2546246C2/en
Priority to US05/622,464 priority patent/US4264385A/en
Priority to IT2834575A priority patent/IT1044681B/en
Priority to CH1342275A priority patent/CH613637A5/en
Priority to JP12389175A priority patent/JPS5164482A/en
Priority to US05/800,866 priority patent/US4167554A/en
Publication of GB1524521A publication Critical patent/GB1524521A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

On a melt (44) of crystallisable material a plate (16) is allowed to float which has a central passage (18) into which a preferably rotating seed crystal is lowered and then retracted, in order to generate an interface (24) between solid and liquid. The buoyancy of the plate (16) and the thermal conditions are set in such a way, that said interface (24) remains within the passage (18) at all times. In order to avoid sticking and jamming, at least the inner surface of the passage (18) consists of a material which is not wettable by the melt (44). The stresses in the growing crystal can be minimised by the passage (18) being centred with respect to the axis of rotation of the mechanism (22) which rotates and raises the growing crystal. The plate (16) is preferably symmetric, and elongated fingers (28) project downwards from a support (30) fastened to the crystal raising and rotating mechanism (22) and are in contact with points on the perimeter of the plate (16) in order to align the plate (16) axially with the axis of rotation of the mechanism (22). <IMAGE>
GB4479274A 1974-10-16 1974-10-16 Growing of crystals Expired GB1524521A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB4479274A GB1524521A (en) 1974-10-16 1974-10-16 Growing of crystals
DE19752546246 DE2546246C2 (en) 1974-10-16 1975-10-15 Method and apparatus for pulling a rod-shaped single crystal
US05/622,464 US4264385A (en) 1974-10-16 1975-10-15 Growing of crystals
IT2834575A IT1044681B (en) 1974-10-16 1975-10-16 CRYSTAL GROWTH
CH1342275A CH613637A5 (en) 1974-10-16 1975-10-16 Process for growing a crystal
JP12389175A JPS5164482A (en) 1974-10-16 1975-10-16 Ketsushokeiseihoho oyobisochi
US05/800,866 US4167554A (en) 1974-10-16 1977-05-26 Crystallization apparatus having floating die member with tapered aperture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4479274A GB1524521A (en) 1974-10-16 1974-10-16 Growing of crystals

Publications (1)

Publication Number Publication Date
GB1524521A true GB1524521A (en) 1978-09-13

Family

ID=10434765

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4479274A Expired GB1524521A (en) 1974-10-16 1974-10-16 Growing of crystals

Country Status (5)

Country Link
JP (1) JPS5164482A (en)
CH (1) CH613637A5 (en)
DE (1) DE2546246C2 (en)
GB (1) GB1524521A (en)
IT (1) IT1044681B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539173A (en) * 1983-03-17 1985-09-03 Commissariat A L'energie Atomique Process for preparing plates of a metallic or semimetallic material from a liquid mass
CN112663140A (en) * 2020-12-07 2021-04-16 山东大学 Mold device for preparing quaternary halide crystal and preparation method

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material
DE2830695C3 (en) * 1977-07-14 1982-05-13 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Apparatus for pulling a III / V compound single crystal from a melt
JPS5418816A (en) * 1977-07-14 1979-02-13 Tokyo Shibaura Electric Co Sintered members having good corrosionn resistance to gallium phosphide and gallium arsenide
FR2509637A1 (en) * 1981-07-17 1983-01-21 Commissariat Energie Atomique METHOD OF SUSTAINING, POSITIONING AND CONTACTLESS MOLDING LIQUID MASSES FOR FORMING SOLIDIFICATION OF MATERIALS AND APPLYING SAID METHOD TO SHAPING MICROGRAVITE MATERIALS
US4605468A (en) * 1984-07-10 1986-08-12 Hughes Aircraft Company Shaped crystal fiber growth method
US5078830A (en) * 1989-04-10 1992-01-07 Mitsubishi Metal Corporation Method for growing single crystal
FR2742366B1 (en) * 1995-12-19 1998-01-09 Commissariat Energie Atomique PROCESS AND INSTALLATION FOR SUSTAINING A LIQUID MASS BY A GAS LAYER

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1286510B (en) * 1962-11-23 1969-01-09 Siemens Ag Process for the production of band-shaped single crystals consisting of semiconductor material by pulling from a melt
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
DE2007200A1 (en) * 1970-02-17 1971-08-26 Siemens Ag Semiconductor rods from melts
JPS5238513B2 (en) * 1973-02-19 1977-09-29

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539173A (en) * 1983-03-17 1985-09-03 Commissariat A L'energie Atomique Process for preparing plates of a metallic or semimetallic material from a liquid mass
CN112663140A (en) * 2020-12-07 2021-04-16 山东大学 Mold device for preparing quaternary halide crystal and preparation method

Also Published As

Publication number Publication date
CH613637A5 (en) 1979-10-15
JPS5164482A (en) 1976-06-03
DE2546246A1 (en) 1976-04-29
IT1044681B (en) 1980-04-21
DE2546246C2 (en) 1982-08-26
JPS5527040B2 (en) 1980-07-17

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Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee