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GB1505165A - Composition of matter - Google Patents

Composition of matter

Info

Publication number
GB1505165A
GB1505165A GB21488/75A GB2148875A GB1505165A GB 1505165 A GB1505165 A GB 1505165A GB 21488/75 A GB21488/75 A GB 21488/75A GB 2148875 A GB2148875 A GB 2148875A GB 1505165 A GB1505165 A GB 1505165A
Authority
GB
United Kingdom
Prior art keywords
refractory metal
oxidized product
sputtered
oxidation
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21488/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1505165A publication Critical patent/GB1505165A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5893—Mixing of deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • H10P95/00—
    • H10W74/43—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

1505165 Oxide material for use in semiconductor devices RCA CORPORATION 20 May 1975 [13 June 1974] 21488/75 Heading H1K A novel material comprises the oxidized product of a composition consisting of Si and a refractory metal (e.g. Pt, Mo, W, Rh or Re) which reacts with Si to form a silicide. The Si/refractory metal composition comprises a layer sputtered on to a. substrate, e.g. of Si, glass, SiO2 or Si3N4 and, being conductive (to a degree determined by the substrate temperature during sputtering and by any subsequent annealing step), may constitute an electrode or a conductive track in an integrated circuit. The oxidized product thereof is insulating and may serve insulation, dielectric or masking functions. Suitable etchants therefor are disclosed. The oxidation step is preferably effected at 400-600‹ C., the oxygen content of the oxidizing atmosphere being lower at the higher temperatures in order to obtain a satisfactory oxidized product. All or part only of the thickness of the sputtered Si/refractory metal layer may be subjected to oxidation.
GB21488/75A 1974-06-13 1975-05-20 Composition of matter Expired GB1505165A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47904974A 1974-06-13 1974-06-13

Publications (1)

Publication Number Publication Date
GB1505165A true GB1505165A (en) 1978-03-30

Family

ID=23902455

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21488/75A Expired GB1505165A (en) 1974-06-13 1975-05-20 Composition of matter

Country Status (9)

Country Link
JP (1) JPS5112773A (en)
AU (1) AU8195575A (en)
BE (1) BE830034A (en)
DE (1) DE2525482A1 (en)
FR (1) FR2274579A1 (en)
GB (1) GB1505165A (en)
IN (1) IN143383B (en)
NL (1) NL7507015A (en)
SE (1) SE7506733L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
JPS5493990A (en) * 1978-01-06 1979-07-25 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
DE3141567C2 (en) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Process for producing layers consisting of tantalum, tungsten or molybdenum at low temperatures and using these layers
US4432035A (en) * 1982-06-11 1984-02-14 International Business Machines Corp. Method of making high dielectric constant insulators and capacitors using same
JPS596577A (en) * 1982-07-05 1984-01-13 Toshiba Corp Semiconductor device and manufacture thereof
JPS63265448A (en) * 1987-11-27 1988-11-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of mos type semiconductor device
GB9307846D0 (en) * 1993-04-15 1993-06-02 Secr Defence Pyrothechnic material
GB2291642B (en) * 1993-04-15 1997-06-04 Secr Defence Pyrotechnic material
DE10207130B4 (en) * 2002-02-20 2007-09-27 Infineon Technologies Ag A method of manufacturing a device and device comprising a noble metal layer, a noble metal silicide layer and an oxidized silicide layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices

Also Published As

Publication number Publication date
BE830034A (en) 1975-10-01
FR2274579A1 (en) 1976-01-09
NL7507015A (en) 1975-12-16
DE2525482A1 (en) 1976-01-02
JPS5112773A (en) 1976-01-31
AU8195575A (en) 1976-12-16
IN143383B (en) 1977-11-12
SE7506733L (en) 1975-12-15

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed