GB1570131A - Manufacture of silicon - Google Patents
Manufacture of silicon Download PDFInfo
- Publication number
- GB1570131A GB1570131A GB1708977A GB1708977A GB1570131A GB 1570131 A GB1570131 A GB 1570131A GB 1708977 A GB1708977 A GB 1708977A GB 1708977 A GB1708977 A GB 1708977A GB 1570131 A GB1570131 A GB 1570131A
- Authority
- GB
- United Kingdom
- Prior art keywords
- reactor
- temperature
- silicon
- deposition
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 72
- 239000010703 silicon Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000008021 deposition Effects 0.000 claims description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 239000007789 gas Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 61
- 239000008187 granular material Substances 0.000 claims description 43
- 239000012159 carrier gas Substances 0.000 claims description 34
- 150000003377 silicon compounds Chemical class 0.000 claims description 25
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 18
- 239000005049 silicon tetrachloride Substances 0.000 claims description 18
- 238000000354 decomposition reaction Methods 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 12
- 239000005052 trichlorosilane Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000011144 upstream manufacturing Methods 0.000 claims description 9
- 239000002826 coolant Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 239000007792 gaseous phase Substances 0.000 claims description 4
- 239000002912 waste gas Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762620739 DE2620739A1 (de) | 1976-05-11 | 1976-05-11 | Verfahren zur herstellung von hochreinem silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1570131A true GB1570131A (en) | 1980-06-25 |
Family
ID=5977608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1708977A Expired GB1570131A (en) | 1976-05-11 | 1977-04-25 | Manufacture of silicon |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS52136831A (de) |
| BE (1) | BE854394A (de) |
| DE (1) | DE2620739A1 (de) |
| DK (1) | DK204377A (de) |
| FR (1) | FR2351051A1 (de) |
| GB (1) | GB1570131A (de) |
| IT (1) | IT1079005B (de) |
| NL (1) | NL7703799A (de) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2185008A (en) * | 1985-12-28 | 1987-07-08 | Korea Res Inst Chem Tech | Method of preparing a high-purity polycrystalline silicon |
| WO2001027029A1 (de) * | 1999-10-11 | 2001-04-19 | Solarworld Aktiengesellschaft | Verfahren zur herstellung von hochreinem, granularem silizium bei niedrigem druck |
| WO2004013044A1 (en) * | 2002-07-22 | 2004-02-12 | Lord Stephen M | Methods for heating a fluidized bed silicon manufacture apparatus |
| WO2012087628A3 (en) * | 2010-12-23 | 2012-08-09 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
| WO2013049325A1 (en) * | 2011-09-30 | 2013-04-04 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| US9114997B2 (en) | 2011-09-30 | 2015-08-25 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2028289B (en) * | 1978-08-18 | 1982-09-02 | Schumacher Co J C | Producing silicon |
| JPS63222011A (ja) * | 1987-03-11 | 1988-09-14 | Mitsubishi Metal Corp | 多結晶シリコンの製造方法 |
| UA112063C2 (uk) * | 2010-10-07 | 2016-07-25 | Рокстар Текнолоджіз ЛЛС | Реакторні системи механічного псевдозрідження шару й способи, придатні для виробництва кремнію |
| US8871153B2 (en) | 2012-05-25 | 2014-10-28 | Rokstar Technologies Llc | Mechanically fluidized silicon deposition systems and methods |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1498266A (en) * | 1974-05-13 | 1978-01-18 | Texas Instruments Inc | Method of silicon production |
-
1976
- 1976-05-11 DE DE19762620739 patent/DE2620739A1/de not_active Withdrawn
-
1977
- 1977-04-06 NL NL7703799A patent/NL7703799A/xx not_active Application Discontinuation
- 1977-04-25 GB GB1708977A patent/GB1570131A/en not_active Expired
- 1977-05-09 IT IT4931877A patent/IT1079005B/it active
- 1977-05-09 BE BE177379A patent/BE854394A/xx unknown
- 1977-05-10 DK DK204377A patent/DK204377A/da not_active Application Discontinuation
- 1977-05-11 JP JP5418777A patent/JPS52136831A/ja active Pending
- 1977-05-11 FR FR7714384A patent/FR2351051A1/fr not_active Withdrawn
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2185008A (en) * | 1985-12-28 | 1987-07-08 | Korea Res Inst Chem Tech | Method of preparing a high-purity polycrystalline silicon |
| WO2001027029A1 (de) * | 1999-10-11 | 2001-04-19 | Solarworld Aktiengesellschaft | Verfahren zur herstellung von hochreinem, granularem silizium bei niedrigem druck |
| WO2004013044A1 (en) * | 2002-07-22 | 2004-02-12 | Lord Stephen M | Methods for heating a fluidized bed silicon manufacture apparatus |
| WO2012087628A3 (en) * | 2010-12-23 | 2012-08-09 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
| CN103384642A (zh) * | 2010-12-23 | 2013-11-06 | Memc电子材料有限公司 | 通过在流化床反应器中使二氯硅烷热分解而生产多晶硅 |
| US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
| CN103384642B (zh) * | 2010-12-23 | 2017-04-05 | Memc电子材料有限公司 | 通过在流化床反应器中使二氯硅烷热分解而生产多晶硅 |
| WO2013049325A1 (en) * | 2011-09-30 | 2013-04-04 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| US9114996B2 (en) | 2011-09-30 | 2015-08-25 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| US9114997B2 (en) | 2011-09-30 | 2015-08-25 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| US10442694B2 (en) | 2011-09-30 | 2019-10-15 | Corner Star Limited | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| US10442695B2 (en) | 2011-09-30 | 2019-10-15 | Corner Star Limited | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| DK204377A (da) | 1977-11-12 |
| DE2620739A1 (de) | 1977-12-01 |
| NL7703799A (nl) | 1977-11-15 |
| BE854394A (fr) | 1977-11-09 |
| IT1079005B (it) | 1985-05-08 |
| FR2351051A1 (fr) | 1977-12-09 |
| JPS52136831A (en) | 1977-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CSNS | Application of which complete specification have been accepted and published, but patent is not sealed |