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GB1543845A - Production of a narrow opening to a surface of a material - Google Patents

Production of a narrow opening to a surface of a material

Info

Publication number
GB1543845A
GB1543845A GB18186/76A GB1818676A GB1543845A GB 1543845 A GB1543845 A GB 1543845A GB 18186/76 A GB18186/76 A GB 18186/76A GB 1818676 A GB1818676 A GB 1818676A GB 1543845 A GB1543845 A GB 1543845A
Authority
GB
United Kingdom
Prior art keywords
production
narrow opening
narrow
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18186/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/619,735 external-priority patent/US4063992A/en
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of GB1543845A publication Critical patent/GB1543845A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • H10D44/466Three-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • H10D44/464Two-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0198Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P95/00
    • H10W20/40
GB18186/76A 1975-05-27 1976-05-04 Production of a narrow opening to a surface of a material Expired GB1543845A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58138975A 1975-05-27 1975-05-27
US05/619,735 US4063992A (en) 1975-05-27 1975-10-06 Edge etch method for producing narrow openings to the surface of materials

Publications (1)

Publication Number Publication Date
GB1543845A true GB1543845A (en) 1979-04-11

Family

ID=27078310

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18186/76A Expired GB1543845A (en) 1975-05-27 1976-05-04 Production of a narrow opening to a surface of a material

Country Status (6)

Country Link
JP (1) JPS51145274A (en)
CA (1) CA1076934A (en)
DE (1) DE2622790A1 (en)
FR (1) FR2312856A1 (en)
GB (1) GB1543845A (en)
NL (1) NL7605549A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939488A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
DE2939456A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
EP0068846A1 (en) * 1981-06-26 1983-01-05 Fujitsu Limited Forming a pattern of metal elements on a substrate
US7863654B2 (en) 1998-12-21 2011-01-04 Megica Corporation Top layers of metal for high performance IC's

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544570A (en) * 1977-06-13 1979-01-13 Nec Corp Production of semiconductor devices
JPS5533064A (en) * 1978-08-29 1980-03-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
FR2454698A1 (en) * 1979-04-20 1980-11-14 Radiotechnique Compelec METHOD FOR PRODUCING INTEGRATED CIRCUITS USING A MULTILAYER MASK AND DEVICES OBTAINED BY THIS METHOD
US4317690A (en) 1980-06-18 1982-03-02 Signetics Corporation Self-aligned double polysilicon MOS fabrication
US4318759A (en) * 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits
US5126811A (en) * 1990-01-29 1992-06-30 Mitsubishi Denki Kabushiki Kaisha Charge transfer device with electrode structure of high transfer efficiency
RU2112300C1 (en) * 1995-03-10 1998-05-27 Институт физики полупроводников СО РАН Protective mask manufacturing process for nanolithography

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7005296A (en) * 1969-04-15 1970-10-19
JPS4874178A (en) * 1971-12-29 1973-10-05
MX3855E (en) * 1975-03-21 1981-08-20 Western Electric Co IMPROVEMENTS IN THE METHOD FOR MANUFACTURING TRANSISTOR STRUCTURES

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939488A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
DE2939456A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
EP0068846A1 (en) * 1981-06-26 1983-01-05 Fujitsu Limited Forming a pattern of metal elements on a substrate
US7863654B2 (en) 1998-12-21 2011-01-04 Megica Corporation Top layers of metal for high performance IC's
US7884479B2 (en) 1998-12-21 2011-02-08 Megica Corporation Top layers of metal for high performance IC's
US7999384B2 (en) 1998-12-21 2011-08-16 Megica Corporation Top layers of metal for high performance IC's
US8022545B2 (en) 1998-12-21 2011-09-20 Megica Corporation Top layers of metal for high performance IC's
US8415800B2 (en) 1998-12-21 2013-04-09 Megica Corporation Top layers of metal for high performance IC's
US8471384B2 (en) 1998-12-21 2013-06-25 Megica Corporation Top layers of metal for high performance IC's
US8531038B2 (en) 1998-12-21 2013-09-10 Megica Corporation Top layers of metal for high performance IC's

Also Published As

Publication number Publication date
AU1437576A (en) 1977-12-01
DE2622790A1 (en) 1976-12-09
FR2312856B1 (en) 1982-11-05
CA1076934A (en) 1980-05-06
JPS51145274A (en) 1976-12-14
FR2312856A1 (en) 1976-12-24
NL7605549A (en) 1976-11-30
JPS5711505B2 (en) 1982-03-04

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee