GB1412879A - Shcottky barrier semiconductor device - Google Patents
Shcottky barrier semiconductor deviceInfo
- Publication number
- GB1412879A GB1412879A GB1070473A GB1070473A GB1412879A GB 1412879 A GB1412879 A GB 1412879A GB 1070473 A GB1070473 A GB 1070473A GB 1070473 A GB1070473 A GB 1070473A GB 1412879 A GB1412879 A GB 1412879A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- march
- chromium
- gold
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H10P95/00—
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
1412879 Schottky diodes RCA CORPORATION 6 March 1973 [10 March 1972] 10704/73 Heading H1K A Schottky diode comprises a first semiconductor layer 14 e.g. of N type, a superposed apertured layer of opposite conductivity type 16, and a metal layer 20 forming a Schottky barrier with the layer exposed in the aperture and an ohmic contact with the other layer 16 which acts as a guard ring. In the device shown layers 14 and 16 are deposited epitaxially on low resistivity substrate 12 the layer 16 being subsequently reduced to annular form with tapering inner and outer peripheries by photoresist and etching techniques. Electrode layer 20 which may be chromium, aluminium, or rhodium if the semiconductor is silicon, gold or chromium if it is germanium, or gold if it is gallium arsenide, is deposited by vacuum evaporation, pyrolytic decomposition of a compound, or sputtering.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23369372A | 1972-03-10 | 1972-03-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1412879A true GB1412879A (en) | 1975-11-05 |
Family
ID=22878317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1070473A Expired GB1412879A (en) | 1972-03-10 | 1973-03-06 | Shcottky barrier semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5132541B2 (en) |
| BE (1) | BE796577A (en) |
| CA (1) | CA973978A (en) |
| DE (1) | DE2311170A1 (en) |
| FR (1) | FR2175889A1 (en) |
| GB (1) | GB1412879A (en) |
| IT (1) | IT981160B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249432A (en) * | 2017-02-14 | 2019-09-17 | 三菱电机株式会社 | Power semiconductor device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51138147U (en) * | 1975-04-30 | 1976-11-08 | ||
| US4119446A (en) * | 1977-08-11 | 1978-10-10 | Motorola Inc. | Method for forming a guarded Schottky barrier diode by ion-implantation |
| JPS6038780U (en) * | 1983-08-24 | 1985-03-18 | 西川 忠蔵 | slide photo mount |
| JP2008177369A (en) * | 2007-01-18 | 2008-07-31 | Sumitomo Electric Ind Ltd | Schottky barrier diode |
| JP2016139698A (en) * | 2015-01-27 | 2016-08-04 | フェニテックセミコンダクター株式会社 | Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device |
-
1973
- 1973-02-05 CA CA162,906A patent/CA973978A/en not_active Expired
- 1973-03-06 IT IT21245/73A patent/IT981160B/en active
- 1973-03-06 GB GB1070473A patent/GB1412879A/en not_active Expired
- 1973-03-07 DE DE19732311170 patent/DE2311170A1/en active Pending
- 1973-03-09 BE BE128632A patent/BE796577A/en unknown
- 1973-03-09 FR FR7308622A patent/FR2175889A1/fr not_active Withdrawn
- 1973-03-09 JP JP48028446A patent/JPS5132541B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249432A (en) * | 2017-02-14 | 2019-09-17 | 三菱电机株式会社 | Power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2175889A1 (en) | 1973-10-26 |
| JPS48103275A (en) | 1973-12-25 |
| CA973978A (en) | 1975-09-02 |
| IT981160B (en) | 1974-10-10 |
| BE796577A (en) | 1973-07-02 |
| DE2311170A1 (en) | 1973-09-13 |
| JPS5132541B2 (en) | 1976-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |