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GB1402998A - Apparatus and process for forming p-n junction semiconductor units - Google Patents

Apparatus and process for forming p-n junction semiconductor units

Info

Publication number
GB1402998A
GB1402998A GB6106571A GB6106571A GB1402998A GB 1402998 A GB1402998 A GB 1402998A GB 6106571 A GB6106571 A GB 6106571A GB 6106571 A GB6106571 A GB 6106571A GB 1402998 A GB1402998 A GB 1402998A
Authority
GB
United Kingdom
Prior art keywords
dopant
ions
semi
conductor
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6106571A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATOMIC ENERGY RESEARCH INST
Japan Atomic Energy Agency
Original Assignee
ATOMIC ENERGY RESEARCH INST
Japan Atomic Energy Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATOMIC ENERGY RESEARCH INST, Japan Atomic Energy Research Institute filed Critical ATOMIC ENERGY RESEARCH INST
Priority to GB6106571A priority Critical patent/GB1402998A/en
Publication of GB1402998A publication Critical patent/GB1402998A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P30/204—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H10P30/214—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

1402998 Semi-conductor device manufacture; ion implantation apparatus ATOMIC ENERGY RESEARCH INSTITUTE 30 June 1972 61065/71 Headings H1K and H1D An apparatus for implanting dopant ions into a semi-conductor body comprises a resistively heated carrier 16 for the dopant-coated silicon body 21 and pairs of electrodes 27, 28; 13, 14; between which an RF and a pulsating direct voltage respectively are applied to cause a discharge in the evacuated chamber 10 providing a beam of positive nitrogen and oxygen ions which pass through the mesh form negative electrode 14, which is attached to a water-cooled heat sink, and bombard the silicon which is held at a temperature of 400-500‹ C. The ions, by creating lattice vacancies, accelerate the diffusion of dopant ions from the layer and impose a limit on diffusion or depth. The dopant layer, e.g. of antimony where the semi-conductor is P type silicon may lie under or over a patterned ion-impervious metal or silica mask. Ion beam density is greatest when the RMS value of the direct voltage is greater than that of the RF. The influence of variation in the mesh size of electrode 14 is discussed.
GB6106571A 1972-06-30 1972-06-30 Apparatus and process for forming p-n junction semiconductor units Expired GB1402998A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB6106571A GB1402998A (en) 1972-06-30 1972-06-30 Apparatus and process for forming p-n junction semiconductor units

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6106571A GB1402998A (en) 1972-06-30 1972-06-30 Apparatus and process for forming p-n junction semiconductor units

Publications (1)

Publication Number Publication Date
GB1402998A true GB1402998A (en) 1975-08-13

Family

ID=10486566

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6106571A Expired GB1402998A (en) 1972-06-30 1972-06-30 Apparatus and process for forming p-n junction semiconductor units

Country Status (1)

Country Link
GB (1) GB1402998A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475068A1 (en) * 1980-02-01 1981-08-07 Commissariat Energie Atomique METHOD FOR DOPING SEMICONDUCTORS
FR2505881A1 (en) * 1981-05-12 1982-11-19 Siemens Ag METHOD AND DEVICE FOR DOPING SEMICONDUCTOR MATERIAL
FR2506344A2 (en) * 1980-02-01 1982-11-26 Commissariat Energie Atomique SEMICONDUCTOR DOPING PROCESS
GB2224752A (en) * 1988-11-10 1990-05-16 Stc Plc Patterned film deposition from perforated
WO2012068088A1 (en) * 2010-11-15 2012-05-24 Varian Semiconductor Equipment Associates, Inc. Doping of planar or three-dimensional structures at elevated temperatures

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475068A1 (en) * 1980-02-01 1981-08-07 Commissariat Energie Atomique METHOD FOR DOPING SEMICONDUCTORS
FR2506344A2 (en) * 1980-02-01 1982-11-26 Commissariat Energie Atomique SEMICONDUCTOR DOPING PROCESS
EP0067090A1 (en) * 1980-02-01 1982-12-15 Commissariat à l'Energie Atomique Process for doping semiconductors
US4368083A (en) 1980-02-01 1983-01-11 Commissariat A L'energie Atomique Process for doping semiconductors
EP0033696B1 (en) * 1980-02-01 1984-01-18 COMMISSARIAT A L'ENERGIE ATOMIQUE Etablissement de Caractère Scientifique Technique et Industriel Process for the doping of semiconductors
US4452644A (en) * 1980-02-01 1984-06-05 Commissariat A L'energie Atomique Process for doping semiconductors
FR2505881A1 (en) * 1981-05-12 1982-11-19 Siemens Ag METHOD AND DEVICE FOR DOPING SEMICONDUCTOR MATERIAL
GB2224752A (en) * 1988-11-10 1990-05-16 Stc Plc Patterned film deposition from perforated
GB2224752B (en) * 1988-11-10 1992-08-05 Stc Plc Film deposition
WO2012068088A1 (en) * 2010-11-15 2012-05-24 Varian Semiconductor Equipment Associates, Inc. Doping of planar or three-dimensional structures at elevated temperatures

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees