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GB1498459A - Growing semiconductor epitaxial films - Google Patents

Growing semiconductor epitaxial films

Info

Publication number
GB1498459A
GB1498459A GB52701/75A GB5270175A GB1498459A GB 1498459 A GB1498459 A GB 1498459A GB 52701/75 A GB52701/75 A GB 52701/75A GB 5270175 A GB5270175 A GB 5270175A GB 1498459 A GB1498459 A GB 1498459A
Authority
GB
United Kingdom
Prior art keywords
substrate
pbsnte
hgcdte
cdte
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52701/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PHIZI I IM P N LEBEDEVA AN SSS
Original Assignee
PHIZI I IM P N LEBEDEVA AN SSS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PHIZI I IM P N LEBEDEVA AN SSS filed Critical PHIZI I IM P N LEBEDEVA AN SSS
Priority to GB52701/75A priority Critical patent/GB1498459A/en
Publication of GB1498459A publication Critical patent/GB1498459A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/8603—Binary Group II-VI materials wherein cadmium is the Group II element, e.g. CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/862—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
    • H10P14/2905—
    • H10P14/2917—
    • H10P14/2919—
    • H10P14/2921—
    • H10P14/3411—
    • H10P14/3432—
    • H10P14/3436—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1498459 SiC; CdTe; PbSnTe; HgCdTe PHIZICHE INST IM P N LEBEDEVA AKAD NAUK SSSR 23 Dec 1975 52701/75 Heading C1A [Also in Division H1] An epitaxial film is grown on a substrate 12 by vapour phase epitaxy, by exposing the substrate 12 to a luminous flux which provides a light intensity of 10-10<SP>4</SP> w/cm<SP>2</SP> on the substrate 12 to clean its surface and heat it to a critical epitaxy temperature (about 0À7 of the substrate melting point), and supplying a source material in gas form to the substrate 12 while it is irradiated. The substrate 12 is supported in a quartz chamber which is flushed with a neutral or reducing agent, by a movable support 25 which, in one extreme position, divides the chamber into two sealed spaces I, II, the space I containing source material 26 to be vapourized and the space II communicating with a coolant source 32 which cools the unexposed surface of the substrate 12 to establish a thermal gradient across it. The apparatus also includes a thermocouple well 27 and one or more Knudsen cells 28 containing a volatile element 29 for adjusting the composition of the grown film. The semi-conductor materials may be A 2 B 6 or A 4 B 6 compounds such as CdTe, PbSnTe, HgCdTe or SiC, the dopants may be In, Cl or Bi, and the substrate may be sapphire or spinel. A method of fusing on a Au-Sb electrode is described.
GB52701/75A 1975-12-23 1975-12-23 Growing semiconductor epitaxial films Expired GB1498459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB52701/75A GB1498459A (en) 1975-12-23 1975-12-23 Growing semiconductor epitaxial films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52701/75A GB1498459A (en) 1975-12-23 1975-12-23 Growing semiconductor epitaxial films

Publications (1)

Publication Number Publication Date
GB1498459A true GB1498459A (en) 1978-01-18

Family

ID=10464940

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52701/75A Expired GB1498459A (en) 1975-12-23 1975-12-23 Growing semiconductor epitaxial films

Country Status (1)

Country Link
GB (1) GB1498459A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009558A1 (en) * 1978-08-21 1980-04-16 International Business Machines Corporation Method and device for modifying a surface by means of a plasma
US4395433A (en) 1979-11-22 1983-07-26 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having regions of different thermal conductivity
GB2163181A (en) * 1984-07-16 1986-02-19 Japan Res Dev Corp Method of manufacturing GaAs single crystals
GB2203757A (en) * 1987-04-16 1988-10-26 Philips Electronic Associated Deposition of alternate cdte and hgte layers in electronic device manufacture
US7955645B2 (en) 2004-11-24 2011-06-07 Sensirion Ag Method for applying selectively a layer to a structured substrate by the usage of a temperature gradient in the substrate
EP2339053A3 (en) * 2009-12-24 2012-04-04 Denso Corporation Manufacturing apparatus and manufacturing method of silicon carbide single crystal

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009558A1 (en) * 1978-08-21 1980-04-16 International Business Machines Corporation Method and device for modifying a surface by means of a plasma
US4395433A (en) 1979-11-22 1983-07-26 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having regions of different thermal conductivity
GB2163181A (en) * 1984-07-16 1986-02-19 Japan Res Dev Corp Method of manufacturing GaAs single crystals
GB2203757A (en) * 1987-04-16 1988-10-26 Philips Electronic Associated Deposition of alternate cdte and hgte layers in electronic device manufacture
US4874634A (en) * 1987-04-16 1989-10-17 U.S. Philips Corp. Vapor phase deposition of cadmium and mercury telluride for electronic device manufacture
GB2203757B (en) * 1987-04-16 1991-05-22 Philips Electronic Associated Electronic device manufacture
US7955645B2 (en) 2004-11-24 2011-06-07 Sensirion Ag Method for applying selectively a layer to a structured substrate by the usage of a temperature gradient in the substrate
EP2339053A3 (en) * 2009-12-24 2012-04-04 Denso Corporation Manufacturing apparatus and manufacturing method of silicon carbide single crystal

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee