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GB1495864A - Inverse planar transistors - Google Patents

Inverse planar transistors

Info

Publication number
GB1495864A
GB1495864A GB51227/75A GB5122775A GB1495864A GB 1495864 A GB1495864 A GB 1495864A GB 51227/75 A GB51227/75 A GB 51227/75A GB 5122775 A GB5122775 A GB 5122775A GB 1495864 A GB1495864 A GB 1495864A
Authority
GB
United Kingdom
Prior art keywords
zone
region
schottky contact
base zone
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51227/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1495864A publication Critical patent/GB1495864A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P30/21—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/461—Inverted vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10P30/204—

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1495864 Semi-conductor devices SIEMENS AG 15 Dec 1975 [19 Feb 1975] 51227/75 Heading H1K An inverse planar transistor comprises a semi-conductor body having a P (or N) surface base zone 5, an N (or P) emitter zone consisting of a region 14 adjacent to the base zone 5 and an N (or P) region 3 connected to the surface by an N (or P) zone 4, and a collector formed as a Schottky contact 20 on the surface of the base zone 5. The doping concentration of region 3 increases with increasing distance from the surface, and the doping concentration of the base zone 5 is not greater than 10<SP>17</SP> atoms/cm.<SP>3</SP> in the region of the Schottky contact 20. P (or N) zones 9, 10 may provide an isolating ring round the transistor. An oxidized, diffused, or implanted zone (not shown) may be provided around Schottky contact 20 to reduce edge leakage currents in use of the transistor. A P (or N) injector zone 6, which includes a more highly doped region 8, may serve as an injection zone to control current for the base zone.
GB51227/75A 1975-02-19 1975-12-15 Inverse planar transistors Expired GB1495864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752507148 DE2507148A1 (en) 1975-02-19 1975-02-19 INVERSE PLANAR TRANSISTOR

Publications (1)

Publication Number Publication Date
GB1495864A true GB1495864A (en) 1977-12-21

Family

ID=5939287

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51227/75A Expired GB1495864A (en) 1975-02-19 1975-12-15 Inverse planar transistors

Country Status (5)

Country Link
JP (1) JPS51107778A (en)
DE (1) DE2507148A1 (en)
FR (1) FR2301924A1 (en)
GB (1) GB1495864A (en)
IT (1) IT1055195B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8410572B2 (en) 2008-10-24 2013-04-02 Epcos Ag Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5276887A (en) * 1975-12-22 1977-06-28 Fujitsu Ltd Semiconductor device
JPS5267275A (en) * 1976-10-08 1977-06-03 Sony Corp Semiconductor unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
JPS4911659U (en) * 1972-05-09 1974-01-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8410572B2 (en) 2008-10-24 2013-04-02 Epcos Ag Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production

Also Published As

Publication number Publication date
FR2301924A1 (en) 1976-09-17
IT1055195B (en) 1981-12-21
FR2301924B1 (en) 1982-04-23
DE2507148A1 (en) 1976-09-02
JPS51107778A (en) 1976-09-24

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee