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GB1494518A - Heterostructure lasers - Google Patents

Heterostructure lasers

Info

Publication number
GB1494518A
GB1494518A GB470175A GB470175A GB1494518A GB 1494518 A GB1494518 A GB 1494518A GB 470175 A GB470175 A GB 470175A GB 470175 A GB470175 A GB 470175A GB 1494518 A GB1494518 A GB 1494518A
Authority
GB
United Kingdom
Prior art keywords
aluminium
region
gaas
modified
gaas region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB470175A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB470175A priority Critical patent/GB1494518A/en
Priority to FR7602887A priority patent/FR2300440A2/en
Priority to BE2054803A priority patent/BE838255R/en
Priority to AU10836/76A priority patent/AU501325B2/en
Publication of GB1494518A publication Critical patent/GB1494518A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

1494518 Semi-conductor lasers STANDARD TELEPHONES & CABLES Ltd 4 Feb 1975 4701/75 Addition to 1273284 Headings H1C and H1K In the GaAs-GaAlAs heterostructure laser described in parent Specification in which either a heterojunction or the PN junction are non- planar and intersect so as to restrict the injection current to a narrow strip PN junction region, the laser life is stated to be extended by adding aluminium to the GaAs region and by adjusting the aluminium content of the remaining regions so that their bandgaps remain greater than that of the modified GaAs region. As described, the modified GaAs region consists of Ga 0À95 Al 0À05 As, and the remaining regions of higher bandgap are formed of Ga 0À7 Al 0À3 As, the upper limits of added aluminium being 37 atomic per cent for the higher bandgap regions with 20 to 30 atomic per cent less aluminium for the modified GaAs region.
GB470175A 1975-02-04 1975-02-04 Heterostructure lasers Expired GB1494518A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB470175A GB1494518A (en) 1975-02-04 1975-02-04 Heterostructure lasers
FR7602887A FR2300440A2 (en) 1975-02-04 1976-02-03 GALLIUM ARSENIDE INJECTION LASER DEVELOPMENTS
BE2054803A BE838255R (en) 1975-02-04 1976-02-04 INJECTION LASER IMPROVEMENTS
AU10836/76A AU501325B2 (en) 1975-02-04 1976-02-04 Heterostructure laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB470175A GB1494518A (en) 1975-02-04 1975-02-04 Heterostructure lasers

Publications (1)

Publication Number Publication Date
GB1494518A true GB1494518A (en) 1977-12-07

Family

ID=9782183

Family Applications (1)

Application Number Title Priority Date Filing Date
GB470175A Expired GB1494518A (en) 1975-02-04 1975-02-04 Heterostructure lasers

Country Status (4)

Country Link
AU (1) AU501325B2 (en)
BE (1) BE838255R (en)
FR (1) FR2300440A2 (en)
GB (1) GB1494518A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127218A (en) * 1982-08-16 1984-04-04 Omron Tateisi Electronics Co Semiconductor laser

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2822146C2 (en) * 1978-05-20 1982-11-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostructure semiconductor laser diode and method for manufacturing a heterostructure semiconductor diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3163562A (en) * 1961-08-10 1964-12-29 Bell Telephone Labor Inc Semiconductor device including differing energy band gap materials
US3893044A (en) * 1973-04-12 1975-07-01 Ibm Laser device having enclosed laser cavity
FR2299730A1 (en) * 1975-01-31 1976-08-27 Thomson Csf ELECTROLUMINESCENT DIODES AND THEIR MANUFACTURING PROCESS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127218A (en) * 1982-08-16 1984-04-04 Omron Tateisi Electronics Co Semiconductor laser

Also Published As

Publication number Publication date
FR2300440B2 (en) 1980-11-07
AU501325B2 (en) 1979-06-14
FR2300440A2 (en) 1976-09-03
BE838255R (en) 1976-08-04
AU1083676A (en) 1977-08-11

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Legal Events

Date Code Title Description
PS Patent sealed