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GB1478035A - Transistor storage circuits - Google Patents

Transistor storage circuits

Info

Publication number
GB1478035A
GB1478035A GB3437874A GB3437874A GB1478035A GB 1478035 A GB1478035 A GB 1478035A GB 3437874 A GB3437874 A GB 3437874A GB 3437874 A GB3437874 A GB 3437874A GB 1478035 A GB1478035 A GB 1478035A
Authority
GB
United Kingdom
Prior art keywords
aug
technique
storage circuits
division
transistor storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3437874A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732339735 external-priority patent/DE2339735C3/en
Priority claimed from DE19732341104 external-priority patent/DE2341104A1/en
Priority claimed from DE19732358475 external-priority patent/DE2358475B2/en
Priority claimed from DE19732360897 external-priority patent/DE2360897B2/en
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1478035A publication Critical patent/GB1478035A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

1478035 Integrated circuits SIEMENS AG 5 Aug 1974 [6 Aug 1973 14 Aug 1973 23 Nov 1973 6 Dec 1973] 34378/74 Heading H1K. [Also in Division H3] A memory comprising a pair of cross coupled opposite conductivity FET's (see Division H3) is formed by the sos technique, by solid silicon technique, or by an aluminium gate technique on a substrate of spinel or sapphire. The load resistors of the two transistors may be an n<SP>+</SP> doped region in the p-channel transistor and vice versa, and the circuit may include an MOS capacitor as in Fig. 16 (not shown).
GB3437874A 1973-08-06 1974-08-05 Transistor storage circuits Expired GB1478035A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19732339735 DE2339735C3 (en) 1973-08-06 Static storage element with a storage flip-flop
DE19732341104 DE2341104A1 (en) 1973-08-14 1973-08-14 Static electronic memory element - uses two complementary transistors cross-connected to form bistable multivibrator
DE19732358475 DE2358475B2 (en) 1973-11-23 1973-11-23 COMPLEMENTARY STORAGE ELEMENT
DE19732360897 DE2360897B2 (en) 1973-12-06 1973-12-06 STATIC MOS MEMORY ELEMENT

Publications (1)

Publication Number Publication Date
GB1478035A true GB1478035A (en) 1977-06-29

Family

ID=27431723

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3437874A Expired GB1478035A (en) 1973-08-06 1974-08-05 Transistor storage circuits

Country Status (5)

Country Link
JP (1) JPS5719515B2 (en)
FR (1) FR2240500B1 (en)
GB (1) GB1478035A (en)
IT (1) IT1017853B (en)
LU (1) LU70670A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840278B2 (en) * 1977-12-02 1983-09-05 三菱電機株式会社 memory cell circuit
JPS55108992A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor memory device

Also Published As

Publication number Publication date
FR2240500A1 (en) 1975-03-07
FR2240500B1 (en) 1981-10-09
JPS5719515B2 (en) 1982-04-22
IT1017853B (en) 1977-08-10
JPS5046454A (en) 1975-04-25
LU70670A1 (en) 1974-12-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee