GB1466007A - Data storage apparatus employing variable threshold field effect semiconductor devices - Google Patents
Data storage apparatus employing variable threshold field effect semiconductor devicesInfo
- Publication number
- GB1466007A GB1466007A GB2376274A GB2376274A GB1466007A GB 1466007 A GB1466007 A GB 1466007A GB 2376274 A GB2376274 A GB 2376274A GB 2376274 A GB2376274 A GB 2376274A GB 1466007 A GB1466007 A GB 1466007A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gate
- storage
- strips
- source
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000013500 data storage Methods 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 239000000969 carrier Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- 210000004027 cell Anatomy 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 230000005764 inhibitory process Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 210000000352 storage cell Anatomy 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
1466007 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 29 May 1974 [29 June 1973] 23762/74 Heading H1K [Also in Division G4] A memory cell of the type constituted by a variable-threshold IGFET whose gate insulation 16 (Fig. 6) is capable of storing charges injected therein from the channel region includes at least one capacitive control gate 24 isolated from the storage gate 22 and located between the storage gate 22 and one of the source and drain regions 12, 14. Application of an appropriate potential to the control gate 24 inhibits the formation of a channel therebeneath and so isolates the storage area 40 of the device from the source or drain region. A single control gate may be provided or, as shown, interconnected control gates 24, 24<SP>1</SP> may be provided on both sides of the storage gate 22. Channel inhibition beneath the control gates 24, 24<SP>1</SP> enables an optical write mechanism to be employed, whereby carriers are generated in the storage area 40 by the absorption of light, an appropriate potential on storage gate 22 causing carriers to tunnel into the gate insulation 16, which preferably comprises silicon nitride or silicon oxide. A more conventional electrical writing mechanism employing carriers injected from the source or drain regions 12, 14 requires the application of a channel-inducing potential on the control gates 24, 24<SP>1</SP>, and this is also the case for both read and erase processes. An orthogonal array of such storage cells is described (Fig. 9), in which source/drain regions common to all cells in a column are provided by diffused strips 46, the control gates are provided by polycrystalline silicon strips 24, 24<SP>1</SP> parallel to the source/drain strips 46, and the storage gates are provided by aluminium strips 22 perpendicular to the strips 24, 24<SP>1</SP> and isolated therefrom by insulation 48.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37522273A | 1973-06-29 | 1973-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1466007A true GB1466007A (en) | 1977-03-02 |
Family
ID=23480012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2376274A Expired GB1466007A (en) | 1973-06-29 | 1974-05-29 | Data storage apparatus employing variable threshold field effect semiconductor devices |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5024038A (en) |
| FR (1) | FR2235454B1 (en) |
| GB (1) | GB1466007A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0003413A3 (en) * | 1978-01-19 | 1979-08-22 | Sperry Corporation | Improvements relating to semiconductor memories |
| JPS54136224A (en) * | 1978-04-14 | 1979-10-23 | Matsushita Electronics Corp | Target electrode for color pick up tube and its manufacture |
| JPS5512688A (en) * | 1978-07-14 | 1980-01-29 | Matsushita Electronics Corp | Target electrode for color camera |
| JPS5584976A (en) * | 1978-12-22 | 1980-06-26 | Nippon Telegraph & Telephone | Surface treatment of transparent electrode layer |
| JPS55138278A (en) * | 1979-04-11 | 1980-10-28 | Hitachi Ltd | Semiconducor non-volatile memory |
| JPS55156371A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Non-volatile semiconductor memory device |
| JPS5641644A (en) * | 1979-09-14 | 1981-04-18 | Hitachi Ltd | Manufacture of image pick-up tube |
| JPS5641640A (en) * | 1979-09-14 | 1981-04-18 | Hitachi Ltd | Manufacture of image pick-up tube |
| JPS5654702A (en) * | 1979-10-11 | 1981-05-14 | Hitachi Ltd | Method of manufactuping transparent conductive film |
| DE3138947A1 (en) * | 1981-09-30 | 1983-04-21 | Siemens AG, 1000 Berlin und 8000 München | STORAGE CELL WITH A DOUBLE GATE FIELD EFFECT TRANSISTOR AND METHOD FOR THEIR OPERATION |
| JPH063762B2 (en) * | 1985-10-30 | 1994-01-12 | ロ−ム株式会社 | Method for manufacturing metal oxide film resistor |
-
1974
- 1974-05-17 JP JP5462174A patent/JPS5024038A/ja active Pending
- 1974-05-21 FR FR7418491A patent/FR2235454B1/fr not_active Expired
- 1974-05-29 GB GB2376274A patent/GB1466007A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2235454B1 (en) | 1977-09-30 |
| JPS5024038A (en) | 1975-03-14 |
| FR2235454A1 (en) | 1975-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5592415A (en) | Non-volatile semiconductor memory | |
| Johnson et al. | A 16Kb electrically erasable nonvolatile memory | |
| DE3687108D1 (en) | SEMICONDUCTOR CELLS FOR INTEGRATED CIRCUITS. | |
| ES8204209A1 (en) | FET cell usable in storage or switching devices. | |
| US20070247921A1 (en) | Scalable high performance non-volatile memory cells using multi-mechanism carrier transport | |
| US7276760B2 (en) | Low power memory subsystem with progressive non-volatility | |
| JPS55124259A (en) | Semiconductor device | |
| ATE238609T1 (en) | SELF-ADJUSTING FLASH EEPROM CELL WITH DOUBLE-BIT SPLIT GAT | |
| JPS6046554B2 (en) | Semiconductor memory elements and memory circuits | |
| KR0179175B1 (en) | Method of manufacturing semiconductor memory device | |
| EP0083194A3 (en) | Electrically erasable programmable read only memory cell having a single transistor | |
| WO1987001859A3 (en) | Nonvolatile memory cell | |
| EP0085550A3 (en) | Electrically-programmable and electrically-erasable mos memory device | |
| GB1466007A (en) | Data storage apparatus employing variable threshold field effect semiconductor devices | |
| GB1480940A (en) | Memory cell | |
| JPS5792488A (en) | Nonvolatile memory | |
| EP0034244A3 (en) | Non-destructive read-out one-fet cell memory matrix | |
| JPS57105890A (en) | Semiconductor storage device | |
| KR910020897A (en) | Nonvolatile Semiconductor Memory | |
| JPH065873A (en) | Nonvolatile semiconductor memory | |
| SU974412A1 (en) | Matrix accumulator | |
| JPS5798190A (en) | Semiconductor storage device | |
| JP2807382B2 (en) | Nonvolatile storage device and method for writing information therefor | |
| JPS52104078A (en) | Semiconductor unit | |
| JPS6322398B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |