GB1465328A - Compression bond assembly for a planar semiconductor device - Google Patents

Abstract

1465328 Semi-conductor devices WESTING- HOUSE ELECTRIC CORP 3 June 1974 [19 June 1973] 24454/74 Heading H1K A semi-conductor structure comprises a planar semi-conductor device 11 including a first region 15 of one conductivity type extending from one major planar surface into a second region of the opposite conductivity type and having an interdigitated surface configuration, and first and second electrodes 36, 18 having planar surfaces sandwiching the device 11, good electrical and thermal contact being established between the first electrode 36 and the region 15 by means of a planar conductive preform 20 congruent and in contact with the first region 15, and means for holding the first electrode 36 in pressurized contact with the preform 20. The semi-conductor regions form respectively the emitter and base of a transistor but the device may be other than a transistor. The other major surface may also have interdigitated semi-conductor regions and a similar pressure contact. Better contacts may be obtained by vapour depositing aluminium or gold on the semi-conductor regions and plating the preform 20, which may be molybdenum, tungsten or one of several listed metals, with gold, and the preform 20 may be fixed to the semi-conductor body 12 by one of several listed means including metallurgical and adhesive bonding. The housing is completed by an insulating spacer 28, an electrode 23 with spring flanges, a ceramic tube 26 and a base contact 29.