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GB1454322A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1454322A
GB1454322A GB4104574A GB4104574A GB1454322A GB 1454322 A GB1454322 A GB 1454322A GB 4104574 A GB4104574 A GB 4104574A GB 4104574 A GB4104574 A GB 4104574A GB 1454322 A GB1454322 A GB 1454322A
Authority
GB
United Kingdom
Prior art keywords
contact
traps
semiconductor
injecting
charge carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4104574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Berlin Brandenburg Academy of Sciences and Humanities
Original Assignee
Berlin Brandenburg Academy of Sciences and Humanities
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Berlin Brandenburg Academy of Sciences and Humanities filed Critical Berlin Brandenburg Academy of Sciences and Humanities
Publication of GB1454322A publication Critical patent/GB1454322A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

1454322 Semiconductor devices AKADEMIE DER WISSENSCHAFTEN DER DDR 20 Sept 1974 [3 Oet 1973] 41045/74 Heading H1K A semiconductor device for light integration, e.g. for use in a target array of a t.v. camera, consists of a semiconductor body 1 containing deep traps, a first electrical contact 2 for injecting charge carriers which are captured by the traps and a second electrical contact 3, which may be capacitively coupled to the body 1 through a thin insulating layer 4 as shown, and which does not inject charge carriers. At the commencement of an integration period the application of the voltage pulse causes charge carriers, which may be of either majority or minority types, to be injected from contact 2 into body 1 where they become trapped. Absorption of light, either directly at the traps or elsewhere in the body, frees a proportion of the trapped charges so that, at the end of the integration period, they contribute to a measurement current pulse. The injecting contact 2 may be a metal-semiconductor contact or a P<SP>+</SP>-P or N<SP>+</SP>-N barrier. The deep trap may be ion inplanted inpurities or radiation-induced defects. Where the non-injecting contact 3 is capacitive as shown it may, in an array of such devices, form part of a charge-coupled shift register. A particular embodiment comprises a body 1 of N type 500 #cm. Si containing Au or Ag deep acceptors in excess of the donor concentration. The N<SP>+</SP> contact 2 is formed by P-diffusion to a degenerate level.
GB4104574A 1973-10-03 1974-09-20 Semiconductor device Expired GB1454322A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD173705A DD114174A1 (en) 1973-10-03 1973-10-03

Publications (1)

Publication Number Publication Date
GB1454322A true GB1454322A (en) 1976-11-03

Family

ID=5492887

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4104574A Expired GB1454322A (en) 1973-10-03 1974-09-20 Semiconductor device

Country Status (5)

Country Link
JP (1) JPS5062785A (en)
DD (1) DD114174A1 (en)
DE (1) DE2439827A1 (en)
GB (1) GB1454322A (en)
SU (1) SU652629A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125217A (en) * 1982-08-06 1984-02-29 Secr Defence Infra red detector arrays
GB2189075A (en) * 1986-03-01 1987-10-14 Anamartic Ltd Light to electrical energy transducer cell

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1564107A (en) * 1976-11-05 1980-04-02 Mullard Ltd Charge coupled devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125217A (en) * 1982-08-06 1984-02-29 Secr Defence Infra red detector arrays
GB2189075A (en) * 1986-03-01 1987-10-14 Anamartic Ltd Light to electrical energy transducer cell
GB2189075B (en) * 1986-03-01 1990-03-14 Anamartic Ltd Light to electrical energy transducer cell

Also Published As

Publication number Publication date
SU652629A1 (en) 1979-03-15
DE2439827A1 (en) 1975-04-10
DD114174A1 (en) 1975-07-12
JPS5062785A (en) 1975-05-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee