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GB1444542A - Radiation sensitive solid state devices - Google Patents

Radiation sensitive solid state devices

Info

Publication number
GB1444542A
GB1444542A GB4395772A GB4395772A GB1444542A GB 1444542 A GB1444542 A GB 1444542A GB 4395772 A GB4395772 A GB 4395772A GB 4395772 A GB4395772 A GB 4395772A GB 1444542 A GB1444542 A GB 1444542A
Authority
GB
United Kingdom
Prior art keywords
layer
radiation sensitive
rectifying
solid state
state devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4395772A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB4395772A priority Critical patent/GB1444542A/en
Priority to DE19732345686 priority patent/DE2345686A1/en
Priority to DE19732345679 priority patent/DE2345679A1/en
Priority to US398480A priority patent/US3894295A/en
Priority to JP10584673A priority patent/JPS561737B2/ja
Priority to JP10584573A priority patent/JPS4987229A/ja
Priority to FR7334100A priority patent/FR2213591B1/fr
Priority to FR7334099A priority patent/FR2200633B1/fr
Priority to US05/555,604 priority patent/US3931633A/en
Publication of GB1444542A publication Critical patent/GB1444542A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

1444542 Electroluminescence MULLARD Ltd 16 Aug 1973 [22 Sept 1972] 43957/72 Heading C4S [Also in Division H1] In a radiation sensitive JUGFET structure the channel of which is located in a semiconductor layer of one conductivity type the gate electrodes, situated at or in one surface of the layer and forming a rectifying junction therewith, is isolated from a gate connection by an integrated storage capacitor at or adjacent that surface, through which it can be charged to a reverse biased state, the arrangement being such that charge carriers generated within a diffusion length of the associated depletion region by incident radiation tend to discharge it. An array of transverse FETs may form part of an image intensifier as described in detail w.r.t. Fig. 13 where layer 89 of electroluminescent ZnS is disposed between the N type layer 81 and the source electrodes 90 which are thinned or apertured centrally to expose the intensified image. Suggested modifications are the use of rectifying PN junctions, Schottky barriers or heterojunctions as capacitors. Specifications 1,444,541 and 1,444,543 are referred to.
GB4395772A 1972-09-22 1972-09-22 Radiation sensitive solid state devices Expired GB1444542A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GB4395772A GB1444542A (en) 1972-09-22 1972-09-22 Radiation sensitive solid state devices
DE19732345686 DE2345686A1 (en) 1972-09-22 1973-09-11 IMAGE REPLAY AND / OR CONVERSION DEVICE
DE19732345679 DE2345679A1 (en) 1972-09-22 1973-09-11 SEMI-CONDUCTOR COLD CATHODE
US398480A US3894295A (en) 1972-09-22 1973-09-18 Solid state image display and/or conversion device
JP10584673A JPS561737B2 (en) 1972-09-22 1973-09-19
JP10584573A JPS4987229A (en) 1972-09-22 1973-09-19
FR7334100A FR2213591B1 (en) 1972-09-22 1973-09-24
FR7334099A FR2200633B1 (en) 1972-09-22 1973-09-24
US05/555,604 US3931633A (en) 1972-09-22 1975-03-05 Electron tube including a photocathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4395772A GB1444542A (en) 1972-09-22 1972-09-22 Radiation sensitive solid state devices

Publications (1)

Publication Number Publication Date
GB1444542A true GB1444542A (en) 1976-08-04

Family

ID=10431121

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4395772A Expired GB1444542A (en) 1972-09-22 1972-09-22 Radiation sensitive solid state devices

Country Status (1)

Country Link
GB (1) GB1444542A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956686A (en) * 1986-02-04 1990-09-11 Texas Instruments Incorporated Two color infrared focal plane array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956686A (en) * 1986-02-04 1990-09-11 Texas Instruments Incorporated Two color infrared focal plane array

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee