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GB1331912A - Furnaces for production of planar transistors and integrated circuits - Google Patents

Furnaces for production of planar transistors and integrated circuits

Info

Publication number
GB1331912A
GB1331912A GB1034172A GB1034172A GB1331912A GB 1331912 A GB1331912 A GB 1331912A GB 1034172 A GB1034172 A GB 1034172A GB 1034172 A GB1034172 A GB 1034172A GB 1331912 A GB1331912 A GB 1331912A
Authority
GB
United Kingdom
Prior art keywords
semi
furnaces
tube
production
integrated circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1034172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisearch Ltd
Original Assignee
Unisearch Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisearch Ltd filed Critical Unisearch Ltd
Publication of GB1331912A publication Critical patent/GB1331912A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

1331912 Semi-conductor furnaces UNISEARCH Ltd 6 March 1972 [12 March 1971] 10341/72 Heading F4B A furnace for the production of planar transistors and integrated circuits in which the diffusion or epitaxial growth of semi-conductors may be carried out, comprises a transparent quartz tube 10 adapted to receive a susceptor on which the semi-conductor wafers to be processed are placed, an induction heating coil 12 arranged to heat the susceptor, and a tube 14 disposed about the coil such that a cooling fluid (water) can pass over the surface of the quartz tube 10; the surface of the tube 10 being provided with an infra-red reflective surface 11. The surface 11 may be either a reflective layer or a metal cylinder. The surface 11 is provided with a longitudinally extending electrically non- conducting slit 13 throughout its length.
GB1034172A 1971-03-12 1972-03-06 Furnaces for production of planar transistors and integrated circuits Expired GB1331912A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU428371 1971-03-12

Publications (1)

Publication Number Publication Date
GB1331912A true GB1331912A (en) 1973-09-26

Family

ID=3694732

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1034172A Expired GB1331912A (en) 1971-03-12 1972-03-06 Furnaces for production of planar transistors and integrated circuits

Country Status (3)

Country Link
DE (1) DE2211795A1 (en)
GB (1) GB1331912A (en)
NL (1) NL7203147A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4284867A (en) * 1979-02-09 1981-08-18 General Instrument Corporation Chemical vapor deposition reactor with infrared reflector
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus

Also Published As

Publication number Publication date
NL7203147A (en) 1972-09-14
DE2211795A1 (en) 1972-10-05

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed