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GB1330526A - Process for the manufacture of fibrous silicon carbide - Google Patents

Process for the manufacture of fibrous silicon carbide

Info

Publication number
GB1330526A
GB1330526A GB5268970A GB5268970A GB1330526A GB 1330526 A GB1330526 A GB 1330526A GB 5268970 A GB5268970 A GB 5268970A GB 5268970 A GB5268970 A GB 5268970A GB 1330526 A GB1330526 A GB 1330526A
Authority
GB
United Kingdom
Prior art keywords
carbon
silicon carbide
vapour
nov
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5268970A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elektroschmelzwerk Kempten GmbH
Original Assignee
Elektroschmelzwerk Kempten GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elektroschmelzwerk Kempten GmbH filed Critical Elektroschmelzwerk Kempten GmbH
Publication of GB1330526A publication Critical patent/GB1330526A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Fibers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

1330526 Silicon carbide whiskers ELEKTROSCHMELZWERK KEMPTEN GmbH 5 Nov 1970 [5 Nov 1969] 52689/70 Heading C1A SiC whiskers, e.g. having a length of 5-50 mm. and a diameter of 1-3 Ám, are prepared by heating Si or SiO 2 , optionally containing carbon and a doping agent, in an atmosphere of a carbon-containing vapour at a temperature of 1000-1700‹ C. in the presence of one or more of the elements of groups IIIa or IVa or a halide or oxyhalide of such an element, other than metallic lanthanum, as catalyst. The preferred catalyst is LaCl 3 or HfCl 3 . The carbon containing vapour may be CO, a hydrocarbon (e.g. CH 4 , C 2 H 6 or C 6 H 6 ), an organosilicon compound, (e.g. organosilane, halogenated organosilane, or an organosiloxane). The vapour phase may also contain a halogen, N 2 or H,.
GB5268970A 1969-11-05 1970-11-05 Process for the manufacture of fibrous silicon carbide Expired GB1330526A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1955683A DE1955683C3 (en) 1969-11-05 1969-11-05 Process for the production of fibrous silicon carbide

Publications (1)

Publication Number Publication Date
GB1330526A true GB1330526A (en) 1973-09-19

Family

ID=5750204

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5268970A Expired GB1330526A (en) 1969-11-05 1970-11-05 Process for the manufacture of fibrous silicon carbide

Country Status (7)

Country Link
BE (1) BE758530A (en)
CA (1) CA929446A (en)
CH (1) CH544575A (en)
DE (1) DE1955683C3 (en)
FR (1) FR2068985A5 (en)
GB (1) GB1330526A (en)
NL (1) NL7016160A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6044280B2 (en) * 1982-02-25 1985-10-02 東海カ−ボン株式会社 Method for producing silicon carbide whiskers
JPS6052120B2 (en) * 1982-06-04 1985-11-18 タテホ化学工業株式会社 Silicon carbide manufacturing method
JPS6170013A (en) * 1984-09-13 1986-04-10 Nikkiso Co Ltd Production of extra fine fiber
DE102015102953A1 (en) * 2015-03-02 2016-09-08 Universität Paderborn Process for producing a fiber-reinforced transparent composite material and transparent fiber-reinforced composite material

Also Published As

Publication number Publication date
CH544575A (en) 1973-11-30
SU430537A3 (en) 1974-05-30
FR2068985A5 (en) 1971-09-03
DE1955683B2 (en) 1973-09-13
CA929446A (en) 1973-07-03
DE1955683A1 (en) 1971-05-19
DE1955683C3 (en) 1974-04-18
NL7016160A (en) 1971-05-07
BE758530A (en) 1971-05-05

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee