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GB1320379A - Circuit arrangement utilizing oscillatory diode - Google Patents

Circuit arrangement utilizing oscillatory diode

Info

Publication number
GB1320379A
GB1320379A GB4448770A GB1320379DA GB1320379A GB 1320379 A GB1320379 A GB 1320379A GB 4448770 A GB4448770 A GB 4448770A GB 1320379D A GB1320379D A GB 1320379DA GB 1320379 A GB1320379 A GB 1320379A
Authority
GB
United Kingdom
Prior art keywords
diode
pulse
oscillation
input
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4448770A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7605869A external-priority patent/JPS4811495B1/ja
Priority claimed from JP44075578A external-priority patent/JPS519273B1/ja
Priority claimed from JP44075579A external-priority patent/JPS519513B1/ja
Priority claimed from JP7476569A external-priority patent/JPS548063B1/ja
Priority claimed from JP44075574A external-priority patent/JPS519272B1/ja
Priority claimed from JP45008300A external-priority patent/JPS5032778B1/ja
Priority claimed from JP45008301A external-priority patent/JPS4942192B1/ja
Priority claimed from JP877670A external-priority patent/JPS4936343B1/ja
Priority claimed from JP45052189A external-priority patent/JPS5032780B1/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1320379A publication Critical patent/GB1320379A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K7/00Modulating pulses with a continuously-variable modulating signal
    • H03K7/06Frequency or rate modulation, i.e. PFM or PRM
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03CMODULATION
    • H03C3/00Angle modulation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/15Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
    • H03K5/15013Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with more than two outputs
    • H03K5/15026Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with more than two outputs with asynchronously driven series connected output stages
    • H03K5/1504Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with more than two outputs with asynchronously driven series connected output stages using a chain of active delay devices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Radar Systems Or Details Thereof (AREA)

Abstract

1320379 Pulse generating diode circuits MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 17 Sept 1970 [19 Sept 1969 20 Sept 1969 (4) 28 Jan 1970 (2) 30 Jan 1970 15 June 1970] 44487/70 Heading H3T A circuit arrangement for producing a pulse signal in response or in dependence on an applied input signal, comprises an oscillatory diode 10, Fig. 7(a) having an N-type Ga As wafer bearing spaced electrodes and having a v-layer doped with iron adjacent to one of the electrodes, biasing means 22 for applying a bias voltage to the electrodes, input means 25 for superposing the input signal on the bias voltage so as to initiate or control oscillation of the diode and output means 26, for picking up the oscillation of the diode. The iron doped layer provides a resistive layer and may be formed by diffusion or crystal growth. The electrodes may be of tin alloy or a mixture of gold and germanium. When the voltage applied across the diode is above an oscillation starting threshold (V 1 , Figs. 2 and 3, not shown) avalanche multiplication of carriers and trapping effects take place in the resistive layer and oscillations are produced. The diode 10 may be biased by source 22 below the oscillation terminating voltage so that an input trigger pulse (Fig. 6(a), not shown) of sufficient length and amplitude to raise the voltage across the diode above the oscillation threshold voltage causes a train of output pulses to be generated at 26. Shorter width input pulses each cause only a single output pulse to be generated by the diode (Fig. 6(b), not shown). Applying an input pulse train having a shorter period than that of the output pulses causes the diode to act as a pulse divider (Fig. 6(c), not shown) which may be used for counting such as in a shift register. With the bias voltage from 22 between the oscillation starting and terminating voltages the diode may be triggered by a pulse to produce a pulse train (Fig. 6(d), not shown) until stopped by triggering with a negative input pulse at 25. When the bias voltage is above the oscillation starting voltage a pulse train is obtained the frequency of which depends on the bias voltage. By applying an input sinusoidal trigger signal (Fig. 6(e), not shown) above the oscillation starting voltage the output pulse train is frequency modulated. By omitting load impedance 23 and taking the output across the diode 10 (Fig. 5(b), not shown) an inverted output signal is obtained. By connecting further inputs via capacitors 24 to this modification a NOR circuit is provided (Fig. 9(b), not shown). Similarly by connecting inputs via further capacitors 24 to the circuit comprising 10, 21, 22, 23 in Fig. 7(a) an OR circuit is provided (Fig. 9(a), not shown). These NOR and OR circuits may be combined to form logic circuits. In the pulse delaying circuit Fig. 7(a) an input pulse to 25 causes diode 10 to generate an output pulse across 26 delayed by the time taken for the input to diode 10 to reach its oscillation threshold. This is repeated for diodes 10<SP>1</SP> and 10<SP>11</SP> to produce further delayed outputs at 32, 33. A scanning device may be provided by using all the outputs 26, 32, 33. The delaying circuit can be formed on a singlecrystal substrate in matrix form. In the pulse generator shown in Fig. 8(a) the diodes 10, 10<SP>1</SP>, 10<SP>11</SP> are biased below the oscillation terminating voltage and are interconnected by delaying elements 35, 36. A pulse input (b-1, Fig. 8(b), not shown) to 37 causes diode 10 to generate an output pulse (b-2) at 41 and due to the delay elements 35 and 36 the diodes 10<SP>1</SP> and 10<SP>11</SP> produce sequentially delayed output pulses (b-3, b-4) (6-4) so that a pulse train of three pulses is produced for each trigger pulse applied at 37. The delaying elements 35, 36 may be identical or different. The pulse train produced may be useful for pulse radar. The pulse generating circuit comprising 21-25 and 10 of Fig. 7(a) may be used to drive high frequency oscillator elements such as an avalanche or Gunn effect diode (43, Fig. 10, not shown) or electroluminescent elements or a radiative diode (45) which luminesces when the diode 10 produces oscillation. The high frequency oscillator arrangement (43) may be applied to radar for measuring an object located at a close distance. Specification 1,275,545 is referred to.
GB4448770A 1969-09-19 1970-09-17 Circuit arrangement utilizing oscillatory diode Expired GB1320379A (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP7605869A JPS4811495B1 (en) 1969-09-19 1969-09-19
JP44075578A JPS519273B1 (en) 1969-09-20 1969-09-20
JP44075579A JPS519513B1 (en) 1969-09-20 1969-09-20
JP7476569A JPS548063B1 (en) 1969-09-20 1969-09-20
JP44075574A JPS519272B1 (en) 1969-09-20 1969-09-20
JP45008300A JPS5032778B1 (en) 1970-01-28 1970-01-28
JP45008301A JPS4942192B1 (en) 1970-01-28 1970-01-28
JP877670A JPS4936343B1 (en) 1970-01-30 1970-01-30
JP45052189A JPS5032780B1 (en) 1970-06-15 1970-06-15

Publications (1)

Publication Number Publication Date
GB1320379A true GB1320379A (en) 1973-06-13

Family

ID=27576566

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4448770A Expired GB1320379A (en) 1969-09-19 1970-09-17 Circuit arrangement utilizing oscillatory diode

Country Status (4)

Country Link
CA (1) CA919266A (en)
DE (1) DE2046243C2 (en)
FR (1) FR2062391A5 (en)
GB (1) GB1320379A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0800272A3 (en) * 1996-04-04 1999-04-21 Nippon Telegraph And Telephone Corporation Periodic Waveform generating circuit
US8928353B2 (en) 2010-07-01 2015-01-06 Manchester Metropolitan University Binary half-adder using oscillators

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3324361A (en) * 1964-12-11 1967-06-06 Texas Instruments Inc Semiconductor contact alloy
US3487338A (en) * 1966-09-21 1969-12-30 Rca Corp Three terminal semiconductor device for converting amplitude modulated signals into frequency modulated signals

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0800272A3 (en) * 1996-04-04 1999-04-21 Nippon Telegraph And Telephone Corporation Periodic Waveform generating circuit
US8928353B2 (en) 2010-07-01 2015-01-06 Manchester Metropolitan University Binary half-adder using oscillators

Also Published As

Publication number Publication date
DE2046243C2 (en) 1982-09-02
FR2062391A5 (en) 1971-06-25
DE2046243A1 (en) 1971-04-15
CA919266A (en) 1973-01-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years