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GB1319388A - Electronic alement - Google Patents

Electronic alement

Info

Publication number
GB1319388A
GB1319388A GB4672871A GB4672871A GB1319388A GB 1319388 A GB1319388 A GB 1319388A GB 4672871 A GB4672871 A GB 4672871A GB 4672871 A GB4672871 A GB 4672871A GB 1319388 A GB1319388 A GB 1319388A
Authority
GB
United Kingdom
Prior art keywords
condition
threshold value
high resistance
poled
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4672871A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Bolkow Blohm AG filed Critical Messerschmitt Bolkow Blohm AG
Publication of GB1319388A publication Critical patent/GB1319388A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Secondary Cells (AREA)

Abstract

1319388 Semi-conductor device MESSERSCHMITT - BOLKOW - BLOHM GmbH 7 Dot 1971 [9 Oct 1970] 46728/71 Heading H1K A data storage element consists of an amorphous layer comprising a mixture of silicon monoxide and dioxide sandwiched between electrodes of different electronegativity, e.g. aluminium and silver. The element can be switched in as little as 1 Ás. from a high resistance (ca.1M#) condition to a low resistance (ca.300#) condition by application of a negative voltage greater than a threshold value to the more electronegative electrode, and back to the high resistance condition by passing a current exceeding a threshold value through the device when oppositely poled. The resistance state it was last in is memorized by the element after removal of the voltage. A matrix of the elements utilizing a common oxide layer may be formed by vapour deposition techniques. In a modified matrix decoupling is achieved by connecting in series with each element a diode 50 poled that when it is conductive the more electronegative electrode of the element is positive.
GB4672871A 1970-10-09 1971-10-07 Electronic alement Expired GB1319388A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2049658A DE2049658C3 (en) 1970-10-09 1970-10-09 Electronic storage element

Publications (1)

Publication Number Publication Date
GB1319388A true GB1319388A (en) 1973-06-06

Family

ID=5784649

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4672871A Expired GB1319388A (en) 1970-10-09 1971-10-07 Electronic alement

Country Status (4)

Country Link
DE (1) DE2049658C3 (en)
FR (1) FR2112279B1 (en)
GB (1) GB1319388A (en)
IT (1) IT942603B (en)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996041380A1 (en) * 1995-06-07 1996-12-19 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5753947A (en) * 1995-01-20 1998-05-19 Micron Technology, Inc. Very high-density DRAM cell structure and method for fabricating it
US5789277A (en) * 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5812441A (en) * 1996-10-21 1998-09-22 Micron Technology, Inc. MOS diode for use in a non-volatile memory cell
US5814527A (en) * 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US5831276A (en) * 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5837564A (en) * 1995-11-01 1998-11-17 Micron Technology, Inc. Method for optimal crystallization to obtain high electrical performance from chalcogenides
US5841150A (en) * 1995-06-07 1998-11-24 Micron Technology, Inc. Stack/trench diode for use with a muti-state material in a non-volatile memory cell
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US5920788A (en) * 1995-06-07 1999-07-06 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US5970336A (en) * 1996-08-22 1999-10-19 Micron Technology, Inc. Method of making memory cell incorporating a chalcogenide element
US5985698A (en) * 1996-07-22 1999-11-16 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
USRE36518E (en) * 1992-06-23 2000-01-18 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
US6025220A (en) * 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US6087689A (en) * 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6117720A (en) * 1995-06-07 2000-09-12 Micron Technology, Inc. Method of making an integrated circuit electrode having a reduced contact area
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6670713B2 (en) 1996-02-23 2003-12-30 Micron Technology, Inc. Method for forming conductors in semiconductor devices
USRE40790E1 (en) * 1992-06-23 2009-06-23 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3813558A (en) * 1972-06-26 1974-05-28 Ibm Directional, non-volatile bistable resistor logic circuits

Cited By (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE40790E1 (en) * 1992-06-23 2009-06-23 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
USRE36518E (en) * 1992-06-23 2000-01-18 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
US6096596A (en) * 1995-01-20 2000-08-01 Micron Technology Inc. Very high-density DRAM cell structure and method for fabricating it
US5753947A (en) * 1995-01-20 1998-05-19 Micron Technology, Inc. Very high-density DRAM cell structure and method for fabricating it
US6077729A (en) * 1995-06-07 2000-06-20 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cellis thereof
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5831276A (en) * 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US6391688B1 (en) 1995-06-07 2002-05-21 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US5841150A (en) * 1995-06-07 1998-11-24 Micron Technology, Inc. Stack/trench diode for use with a muti-state material in a non-volatile memory cell
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US5920788A (en) * 1995-06-07 1999-07-06 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US7271440B2 (en) 1995-06-07 2007-09-18 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US6916710B2 (en) 1995-06-07 2005-07-12 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6831330B2 (en) 1995-06-07 2004-12-14 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US6797978B2 (en) 1995-06-07 2004-09-28 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6118135A (en) * 1995-06-07 2000-09-12 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US6002140A (en) * 1995-06-07 1999-12-14 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6117720A (en) * 1995-06-07 2000-09-12 Micron Technology, Inc. Method of making an integrated circuit electrode having a reduced contact area
US8017453B2 (en) 1995-06-07 2011-09-13 Round Rock Research, Llc Method and apparatus for forming an integrated circuit electrode having a reduced contact area
WO1996041380A1 (en) * 1995-06-07 1996-12-19 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US6653195B1 (en) 1995-06-07 2003-11-25 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
JP3245174B2 (en) 1995-06-07 2002-01-07 ミクロン テクノロジー、インコーポレイテッド Memory array having multi-state emergent and method for forming the array or cells of the array
US6534780B1 (en) 1995-06-07 2003-03-18 Micron Technology, Inc. Array of ultra-small pores for memory cells
US7687796B2 (en) 1995-06-07 2010-03-30 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US6104038A (en) * 1995-06-07 2000-08-15 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6429449B1 (en) 1995-06-07 2002-08-06 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5837564A (en) * 1995-11-01 1998-11-17 Micron Technology, Inc. Method for optimal crystallization to obtain high electrical performance from chalcogenides
US6670713B2 (en) 1996-02-23 2003-12-30 Micron Technology, Inc. Method for forming conductors in semiconductor devices
US6700211B2 (en) 1996-02-23 2004-03-02 Micron Technology, Inc. Method for forming conductors in semiconductor devices
US6025220A (en) * 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US6392913B1 (en) 1996-06-18 2002-05-21 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US6229157B1 (en) 1996-06-18 2001-05-08 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US8264061B2 (en) 1996-07-22 2012-09-11 Round Rock Research, Llc Phase change memory cell and devices containing same
US7494922B2 (en) 1996-07-22 2009-02-24 Micron Technology, Inc. Small electrode for phase change memories
US6797612B2 (en) 1996-07-22 2004-09-28 Micron Technology, Inc. Method of fabricating a small electrode for chalcogenide memory cells
US7838416B2 (en) 1996-07-22 2010-11-23 Round Rock Research, Llc Method of fabricating phase change memory cell
US5985698A (en) * 1996-07-22 1999-11-16 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US7273809B2 (en) 1996-07-22 2007-09-25 Micron Technology, Inc. Method of fabricating a conductive path in a semiconductor device
US6111264A (en) * 1996-07-22 2000-08-29 Micron Technology, Inc. Small pores defined by a disposable internal spacer for use in chalcogenide memories
US5814527A (en) * 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US6492656B2 (en) 1996-07-22 2002-12-10 Micron Technology, Inc Reduced mask chalcogenide memory
US6531391B2 (en) 1996-07-22 2003-03-11 Micron Technology, Inc. Method of fabricating a conductive path in a semiconductor device
US6635951B1 (en) 1996-07-22 2003-10-21 Micron Technology, Inc. Small electrode for chalcogenide memories
US7687881B2 (en) 1996-07-22 2010-03-30 Micron Technology, Inc. Small electrode for phase change memories
US6316784B1 (en) 1996-07-22 2001-11-13 Micron Technology, Inc. Method of making chalcogenide memory device
US5789277A (en) * 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5970336A (en) * 1996-08-22 1999-10-19 Micron Technology, Inc. Method of making memory cell incorporating a chalcogenide element
US6153890A (en) * 1996-08-22 2000-11-28 Micron Technology, Inc. Memory cell incorporating a chalcogenide element
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US5978258A (en) * 1996-10-21 1999-11-02 Micron Technology, Inc. MOS diode for use in a non-volatile memory cell background
US5812441A (en) * 1996-10-21 1998-09-22 Micron Technology, Inc. MOS diode for use in a non-volatile memory cell
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US6534368B2 (en) 1997-01-28 2003-03-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US6114713A (en) * 1997-01-28 2000-09-05 Zahorik; Russell C. Integrated circuit memory cell having a small active area and method of forming same
US6287919B1 (en) 1997-01-28 2001-09-11 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US6777705B2 (en) 1997-05-09 2004-08-17 Micron Technology, Inc. X-point memory cell
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US7453082B2 (en) 1997-05-09 2008-11-18 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6087689A (en) * 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6225142B1 (en) 1997-06-16 2001-05-01 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6252244B1 (en) 1997-06-16 2001-06-26 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
USRE40842E1 (en) * 2000-07-14 2009-07-14 Micron Technology, Inc. Memory elements and methods for making same
US7504730B2 (en) 2000-07-14 2009-03-17 Micron Technology, Inc. Memory elements
US6607974B2 (en) 2000-07-14 2003-08-19 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
US8076783B2 (en) 2000-07-14 2011-12-13 Round Rock Research, Llc Memory devices having contact features
US8362625B2 (en) 2000-07-14 2013-01-29 Round Rock Research, Llc Contact structure in a memory device
US8786101B2 (en) 2000-07-14 2014-07-22 Round Rock Research, Llc Contact structure in a memory device
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same

Also Published As

Publication number Publication date
FR2112279A1 (en) 1972-06-16
DE2049658B2 (en) 1975-01-16
IT942603B (en) 1973-04-02
DE2049658C3 (en) 1975-08-28
FR2112279B1 (en) 1974-05-10
DE2049658A1 (en) 1972-04-13

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees