GB1316490A - Electroluminescent devices - Google Patents
Electroluminescent devicesInfo
- Publication number
- GB1316490A GB1316490A GB6033070A GB1316490DA GB1316490A GB 1316490 A GB1316490 A GB 1316490A GB 6033070 A GB6033070 A GB 6033070A GB 1316490D A GB1316490D A GB 1316490DA GB 1316490 A GB1316490 A GB 1316490A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- atoms
- diffused
- concentration
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
1316490 Semi-conductor devices FERRANTI Ltd 13 Dec 1971 [17 Dec 1970] 60330/70 Heading H1K [Also in Division C4] A method of manufacturing electroluminescent devices with light emitting pn-junctions 16 comprises depositing an N-type epitaxial layer 12 of gallium phosphide from the liquid phase on to a substrate 11, the layer 12 containing nitrogen or a material having the same electronic nitrogen in the layer, and forming regions 15 of p-type in the layer 12 by diffusion via apertures 14 in an insulating layer 13. The impurity concentration of nitrogen may be 10<SP>16</SP> to 10<SP>19</SP> atoms/cm.<SP>3</SP>, preferably 5 Î 10<SP>17</SP> to 5 Î 10<SP>18</SP> atoms/cc., and the layer 12 may include as an n-type dopant sulphur to a concentration of 10<SP>16</SP> to 5 Î 10<SP>17</SP> atoms/cm.<SP>3</SP>, preferably 5 + 10<SP>16</SP> to 10<SP>17</SP> atoms/cc., or tellurium or silicon. The diffused impurity may be zinc and be diffused from the vapour phase at 650 C. to a concentration of 10<SP>18</SP> to 10<SP>19</SP> atoms/cc. Alternatively the zinc may be diffused from a surface layer. Prior to formation of the insulating layer 13, which may be of silicon oxide-silicon nitride-silicon oxide provided by sputtering, the layer 12 may be lapped. The substrate 11 may be of gallium phosphide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB6033070 | 1970-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1316490A true GB1316490A (en) | 1973-05-09 |
Family
ID=10485438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6033070A Expired GB1316490A (en) | 1970-12-17 | 1970-12-17 | Electroluminescent devices |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2118493A5 (en) |
| GB (1) | GB1316490A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2558757A1 (en) * | 1975-01-07 | 1976-07-08 | Philips Nv | PROCESS AND PRODUCTION OF SEMICONDUCTOR CRYSTALS USING ISO ELECTRONIC NITROGEN TRAP CENTERS AND CRYSTALS PRODUCED BY THIS PROCESS |
-
1970
- 1970-12-17 GB GB6033070A patent/GB1316490A/en not_active Expired
-
1971
- 1971-12-07 FR FR7143898A patent/FR2118493A5/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2558757A1 (en) * | 1975-01-07 | 1976-07-08 | Philips Nv | PROCESS AND PRODUCTION OF SEMICONDUCTOR CRYSTALS USING ISO ELECTRONIC NITROGEN TRAP CENTERS AND CRYSTALS PRODUCED BY THIS PROCESS |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2118493A5 (en) | 1972-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1435590A (en) | Process for the fabrication of a semiconductor structure | |
| GB1221590A (en) | Improvements in or relating to semiconductor devices | |
| GB1359308A (en) | Semiconductor luminescent devices and methods of making them | |
| GB1320043A (en) | Gallium phosphide electroluminescent light sources | |
| US3549434A (en) | Low resisitivity group iib-vib compounds and method of formation | |
| US3178798A (en) | Vapor deposition process wherein the vapor contains both donor and acceptor impurities | |
| GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
| JPS645070A (en) | Vertical insulated gate field effect transistor | |
| GB1173162A (en) | Injection-Luminescent Diodes | |
| GB1316490A (en) | Electroluminescent devices | |
| GB1357650A (en) | Methods of manufacturing semiconductor devices | |
| GB1108774A (en) | Transistors | |
| GB1228717A (en) | ||
| GB1215557A (en) | A semiconductor photosensitive device | |
| US3488542A (en) | Light emitting heterojunction semiconductor devices | |
| GB1098564A (en) | A method for producing gallium arsenide devices | |
| GB1427484A (en) | Method of manufacturing a green light-emitting gallium phosphide device | |
| GB1448606A (en) | Semiconductor luminescence diodes | |
| GB1363524A (en) | Diffusion of impurities into a substrate | |
| GB1282635A (en) | Improvements in or relating to semiconductor devices made of gallium arsenide | |
| GB1101909A (en) | Method for producing gallium arsenide devices | |
| GB1477524A (en) | Red light-emitting gallium phosphide device | |
| GB1533400A (en) | Electroluminescent diode manufacture | |
| JPS55162258A (en) | Semiconductor memory device | |
| GB1392955A (en) | Light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |