GB1313891A - Methods of manufacturing semiconductor devices - Google Patents

Abstract

1313891 Crystallizing melts PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 30 June 1970 [1 July 1969] 31704/70 Heading BIS [Also in Divisions H1 and Cl] The manufacture of a semiconductor device includes the step of epitaxially depositing on a substrate consisting of a single or mixed A<SP>III</SP>B<SP>V</SP> compound a layer of a single or mixed A<SP>II</SP>B<SP>IV</SP>C 2 <SP>V</SP> compound from a melt containing its components. A<SP>II</SP> is one of beryllium, magnesium, zinc, cadmium and mercury, B<SP>IV</SP> is germanium, silicon or tin and C<SP>V</SP> is nitrogen, phosphorus, arsenic or antimony. The melt may consist of a solution of the A<SP>II</SP>B<SP>IV</SP>C 2 <SP>V</SP> compound, formed by vapour transport reaction, in one or more of tin, lead, bismuth, zinc and cadmium, and may contain excess of A<SP>II</SP> or B<SP>IV</SP> or conventional dopants such as Ga Al, S, Se and Te to provide acceptor or donor doping. The belt and substrate may be contained in a crucible as described in Specification 1299610 in which a withdrawable slide allows the melt and substrate to be brought into contact. The lattice constants of the substrate and layer should match within 5% as in the structures specifically described which comprise ZnSiAs 2 and CdSiP 2 and GaP. The heterojunction with the substrate may also form a PN junction of the device, or the substrate may be used as a semi-insulating support, or as an electrode and support. A two stage epitaxial growth may be used to provide a PN junction in the layer or a junction 4 formed by a subsequent vapour phase diffusion as in the light-emitting diode of Fig. 1. In this device an aluminium injecting contact may replace the junction. Other devices described are a Schottky-barrier voltage-dependent diode capacitor and a Schottky diode with a passive substrate, the Schottky contacts being of gold and tin respectively.