GB1311404A - Photoelectric conductor devices - Google Patents
Photoelectric conductor devicesInfo
- Publication number
- GB1311404A GB1311404A GB3858971A GB3858971A GB1311404A GB 1311404 A GB1311404 A GB 1311404A GB 3858971 A GB3858971 A GB 3858971A GB 3858971 A GB3858971 A GB 3858971A GB 1311404 A GB1311404 A GB 1311404A
- Authority
- GB
- United Kingdom
- Prior art keywords
- selenide
- layer
- cadmium
- selenium
- sulphide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 title 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 5
- 150000003346 selenoethers Chemical class 0.000 abstract 5
- 239000011669 selenium Substances 0.000 abstract 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- 150000001661 cadmium Chemical class 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- 239000001301 oxygen Substances 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 229910052711 selenium Inorganic materials 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000005083 Zinc sulfide Substances 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 2
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical compound [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 2
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 abstract 2
- MCAHWIHFGHIESP-UHFFFAOYSA-N selenous acid Chemical compound O[Se](O)=O MCAHWIHFGHIESP-UHFFFAOYSA-N 0.000 abstract 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 230000032683 aging Effects 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 abstract 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229940000207 selenious acid Drugs 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
1311404 Image pick-up tubes; phoioconductive devices TOKYO SHIBAURA ELECTRIC CO Ltd 17 Aug 1971 [17 Aug 1970] 38589/71 Headings H1D and H1K A photoconductive target comprises a first layer comprising photoconductive cadmium selenide, a second layer comprising a cadmium salt of an oxy-acid, and a high resistance third layer comprising a compound other than cadmium selenide. Typically the layers are deposited in the above order on a nesa glass signal electrode. The first layer may consist of CdSe which is substantially pure or doped with copper, silver, gold, indium, gallium, aluminium, halogens, tellurium antimony, bismuth, lead, tin, or alkali or alkaline earth metals. The second layer, which is preferably less than 2000 thick, may consist of the cadmium salt of selenious acid with or without an admixture of cadmium oxide, while suitable materials for the third layer, which may consist of a number of sublayers, are one or more of zinc sulphide, arsenic dier tri-sulphide, arsenic tri-selenide, germanium selenide, thallium sulphide or selenide, bismuth trisulphide or selenide, zinc selenide, cadmium telluride and antimony trisulphide or selenide. For solid state scanning the target may be additionally provided with strip electrodes on the third layer and for improved resolution the signal electrode may also be divided into strips. The targets exhibit lower dark currents varying less with ageing while retaining the sensitivity of known targets. A typical target is made by first vacuum depositing CdSe, then heating it for 15 minutes at 600 C, in nitrogen, for 30 minutes at 500 C. in Se vapour, and then heating in nitrogen containing oxygen and selenium vapour and cooling rapidly to form the selenious acid salt. Finally zinc sulphide is vacuum deposited to a thickness of 0À1 Á. Alternatively, after deposition the cadmium selenide is heated at 500 C. for 10- 50 minutes in nitrogen containing oxygen and selenium and the oxygen and selenium content reduced to zero while cooling rapidly. In this case the third layer is arsenic triselenide vacuum deposited to a thickness of 0À4 Á. Another way of forming the cadmium salt is by heating the selenide layer to 300 C. in the presence of selenium dioxide. A single crystal slice of the selenide may be stuck to the nesa glass in place of the deposited layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45071392A JPS4830193B1 (en) | 1970-08-17 | 1970-08-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1311404A true GB1311404A (en) | 1973-03-28 |
Family
ID=13459185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3858971A Expired GB1311404A (en) | 1970-08-17 | 1971-08-17 | Photoelectric conductor devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3816787A (en) |
| JP (1) | JPS4830193B1 (en) |
| CA (1) | CA922421A (en) |
| DE (1) | DE2141233B2 (en) |
| FR (1) | FR2112921A1 (en) |
| GB (1) | GB1311404A (en) |
| NL (1) | NL161613C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2273074C1 (en) * | 2004-07-20 | 2006-03-27 | ОАО "Центральный научно-исследовательский институт "Электрон" | Vidicon target |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1424608A (en) * | 1972-10-12 | 1976-02-11 | Matsushita Electric Industrial Co Ltd | Method for manufacturing a target for an image pickup tube |
| DE2452934A1 (en) * | 1973-12-07 | 1975-06-12 | Xerox Corp | XEROGRAPHIC ELEMENT |
| US3947717A (en) * | 1975-03-31 | 1976-03-30 | Rca Corporation | Photoconductor of cadmium selenide and aluminum oxide |
| JPS58147414U (en) * | 1982-03-29 | 1983-10-04 | チロン・ジヤパン株式会社 | Accessories |
| JP2753264B2 (en) * | 1988-05-27 | 1998-05-18 | 株式会社日立製作所 | Imaging tube |
| CN119029054B (en) * | 2024-10-24 | 2025-04-04 | 正泰新能科技股份有限公司 | Edge-passivated crystalline silicon battery and perovskite crystalline silicon laminated battery and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2843772A (en) * | 1953-03-25 | 1958-07-15 | Rca Corp | Cathode ray tube and target |
| GB840763A (en) * | 1955-08-17 | 1960-07-13 | Emi Ltd | Improvements in light sensitive targets |
| DE1614753A1 (en) * | 1966-01-11 | 1970-12-10 | Tokyo Shibaura Electric Co | Photoelectric conductors |
| US3346755A (en) * | 1966-03-31 | 1967-10-10 | Rca Corp | Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials |
| US3571646A (en) * | 1967-07-17 | 1971-03-23 | Tokyo Shibaura Electric Co | Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride |
-
1970
- 1970-08-17 JP JP45071392A patent/JPS4830193B1/ja active Pending
-
1971
- 1971-08-17 CA CA120703A patent/CA922421A/en not_active Expired
- 1971-08-17 GB GB3858971A patent/GB1311404A/en not_active Expired
- 1971-08-17 NL NL7111347.A patent/NL161613C/en not_active IP Right Cessation
- 1971-08-17 FR FR7129957A patent/FR2112921A1/fr not_active Withdrawn
- 1971-08-17 DE DE2141233A patent/DE2141233B2/en not_active Ceased
- 1971-08-17 US US00172541A patent/US3816787A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2273074C1 (en) * | 2004-07-20 | 2006-03-27 | ОАО "Центральный научно-исследовательский институт "Электрон" | Vidicon target |
Also Published As
| Publication number | Publication date |
|---|---|
| NL161613C (en) | 1980-02-15 |
| NL161613B (en) | 1979-09-17 |
| FR2112921A1 (en) | 1972-06-23 |
| US3816787A (en) | 1974-06-11 |
| NL7111347A (en) | 1972-02-21 |
| DE2141233A1 (en) | 1972-02-24 |
| JPS4830193B1 (en) | 1973-09-18 |
| CA922421A (en) | 1973-03-06 |
| DE2141233B2 (en) | 1973-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
| PCNP | Patent ceased through non-payment of renewal fee |