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GB1372414A - Semiconductor memory device arrangements - Google Patents

Semiconductor memory device arrangements

Info

Publication number
GB1372414A
GB1372414A GB3545471A GB3545471A GB1372414A GB 1372414 A GB1372414 A GB 1372414A GB 3545471 A GB3545471 A GB 3545471A GB 3545471 A GB3545471 A GB 3545471A GB 1372414 A GB1372414 A GB 1372414A
Authority
GB
United Kingdom
Prior art keywords
pulse
conducting
memory device
render
long enough
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3545471A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Electronics Ltd
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Priority to GB3545471A priority Critical patent/GB1372414A/en
Publication of GB1372414A publication Critical patent/GB1372414A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Read Only Memory (AREA)

Abstract

1372414 Data storage MARCONI CO Ltd 26 Nov 1971 [28 July 1971] 35454/71 Heading G4C A memory device of the kind comprising an amorphous layer of semi-conducting glass chalcogenide is driven into its conductive state by a first pulse 7 and the conductive state is fixed by a second pulse 6; the first pulse applies a voltage above the theshold value V T for a short time long enough to render the device conducting but not long enough to make the conducting state permanent while the second pulse maintains a smaller current through the device for a longer period such that the device remains conducting after the pulse ends and until a further pulse is applied to render it non conducting. In a two dimensional array of devices (Fig. 7, not shown) the two pulse forms shown in Fig. 8 can be applied by horizontal and vertical lines; only the device at the junction of the two selected lines is then rendered conductive.
GB3545471A 1971-11-26 1971-11-26 Semiconductor memory device arrangements Expired GB1372414A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3545471A GB1372414A (en) 1971-11-26 1971-11-26 Semiconductor memory device arrangements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3545471A GB1372414A (en) 1971-11-26 1971-11-26 Semiconductor memory device arrangements

Publications (1)

Publication Number Publication Date
GB1372414A true GB1372414A (en) 1974-10-30

Family

ID=10377922

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3545471A Expired GB1372414A (en) 1971-11-26 1971-11-26 Semiconductor memory device arrangements

Country Status (1)

Country Link
GB (1) GB1372414A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4225946A (en) * 1979-01-24 1980-09-30 Harris Corporation Multilevel erase pulse for amorphous memory devices
US4228524A (en) * 1979-01-24 1980-10-14 Harris Corporation Multilevel sequence of erase pulses for amorphous memory devices
US6687153B2 (en) 2001-06-29 2004-02-03 Ovonyx, Inc. Programming a phase-change material memory
WO2004025659A1 (en) 2002-09-11 2004-03-25 Ovonyx, Inc. Programming a phase-change material memory
WO2004055828A3 (en) * 2002-12-13 2004-11-04 Ovonyx Inc Memory and access devices
EP1196924A4 (en) * 1999-06-22 2005-12-07 Ovonyx Inc Method of programming phase-change memory element

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4225946A (en) * 1979-01-24 1980-09-30 Harris Corporation Multilevel erase pulse for amorphous memory devices
US4228524A (en) * 1979-01-24 1980-10-14 Harris Corporation Multilevel sequence of erase pulses for amorphous memory devices
EP1196924A4 (en) * 1999-06-22 2005-12-07 Ovonyx Inc Method of programming phase-change memory element
US6687153B2 (en) 2001-06-29 2004-02-03 Ovonyx, Inc. Programming a phase-change material memory
WO2004025659A1 (en) 2002-09-11 2004-03-25 Ovonyx, Inc. Programming a phase-change material memory
GB2407707A (en) * 2002-09-11 2005-05-04 Ovonyx Inc Programming a phase-change material memory
CN100449647C (en) * 2002-09-11 2009-01-07 奥翁尼克斯公司 Program Phase Change Material Memory
DE10297786B4 (en) * 2002-09-11 2012-11-08 Ovonyx Inc. Programming a phase change material memory
WO2004055828A3 (en) * 2002-12-13 2004-11-04 Ovonyx Inc Memory and access devices
CN100552812C (en) * 2002-12-13 2009-10-21 奥沃尼克斯股份有限公司 Storage device and access device

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee