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GB1348750A - Semiconductor devices having stable high-voltage junctions - Google Patents

Semiconductor devices having stable high-voltage junctions

Info

Publication number
GB1348750A
GB1348750A GB2815772A GB2815772A GB1348750A GB 1348750 A GB1348750 A GB 1348750A GB 2815772 A GB2815772 A GB 2815772A GB 2815772 A GB2815772 A GB 2815772A GB 1348750 A GB1348750 A GB 1348750A
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
stable high
voltage junctions
junctions
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2815772A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1348750A publication Critical patent/GB1348750A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W42/60—
    • H10W44/401—
    • H10W74/131—
GB2815772A 1971-06-23 1972-06-15 Semiconductor devices having stable high-voltage junctions Expired GB1348750A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15583271A 1971-06-23 1971-06-23

Publications (1)

Publication Number Publication Date
GB1348750A true GB1348750A (en) 1974-03-20

Family

ID=22556970

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2815772A Expired GB1348750A (en) 1971-06-23 1972-06-15 Semiconductor devices having stable high-voltage junctions

Country Status (15)

Country Link
JP (1) JPS5126789B1 (en)
AU (1) AU464764B2 (en)
BE (1) BE785286A (en)
BR (1) BR7203959D0 (en)
CA (1) CA984059A (en)
DD (1) DD97096A5 (en)
DE (1) DE2229605A1 (en)
ES (1) ES403881A1 (en)
FR (1) FR2143097B1 (en)
GB (1) GB1348750A (en)
HU (1) HU166762B (en)
IT (1) IT951158B (en)
NL (1) NL7208569A (en)
PL (1) PL83293B1 (en)
SE (1) SE378708B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3942419A1 (en) * 1988-12-22 1990-06-28 Fuji Electric Co Ltd Semiconductor substrate having P-region and N-region - in which field electrode is formed on oxide film and overlaps both sides of junction

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2047461A (en) * 1979-04-19 1980-11-26 Philips Electronic Associated Semiconductor device
US4388635A (en) * 1979-07-02 1983-06-14 Hitachi, Ltd. High breakdown voltage semiconductor device
FR2633141B1 (en) * 1988-06-17 1992-02-14 Sgs Thomson Microelectronics CHIP CARD WITH PROTECTION SCREEN
DE102009043598A1 (en) * 2009-09-25 2011-04-21 Siemens Aktiengesellschaft Method for controlling an inverter and arrangement for controlling an inverter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3942419A1 (en) * 1988-12-22 1990-06-28 Fuji Electric Co Ltd Semiconductor substrate having P-region and N-region - in which field electrode is formed on oxide film and overlaps both sides of junction

Also Published As

Publication number Publication date
AU4328472A (en) 1973-12-13
IT951158B (en) 1973-06-30
JPS5126789B1 (en) 1976-08-09
DD97096A5 (en) 1973-04-12
DE2229605A1 (en) 1972-12-28
BR7203959D0 (en) 1973-08-09
HU166762B (en) 1975-05-28
FR2143097B1 (en) 1977-12-23
AU464764B2 (en) 1975-08-21
CA984059A (en) 1976-02-17
BE785286A (en) 1972-10-16
NL7208569A (en) 1972-12-28
FR2143097A1 (en) 1973-02-02
SE378708B (en) 1975-09-08
ES403881A1 (en) 1975-05-01
PL83293B1 (en) 1975-12-31

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee