GB1345698A - Photosensitive detecotrs - Google Patents
Photosensitive detecotrsInfo
- Publication number
- GB1345698A GB1345698A GB4061170A GB1345698DA GB1345698A GB 1345698 A GB1345698 A GB 1345698A GB 4061170 A GB4061170 A GB 4061170A GB 1345698D A GB1345698D A GB 1345698DA GB 1345698 A GB1345698 A GB 1345698A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photo
- array
- output
- circuit
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005286 illumination Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Facsimile Heads (AREA)
Abstract
1345698 Photo-sensitive array circuit INTEGRATED PHOTOMATRIX Ltd 12 Oct 1971 40611/70 Heading G1A In a photo-sensitive array circuit, for detecting local variations in brightness, comprising an array of sub-circuits connected in parallel, each sub-circuit comprises a photo-diode 11, a MOST M1 (Metal oxide silicon transistor) which acts as a gate and a further MOST M2 which acts as an amplifier, the elements being connected to supply rails 12 and 13 and to a negative pulse input rail 15 and an output rail 14 as shown in Fig.1. This sub-circuit is repeated Fig. 2 (not shown) to form the desired array and the circuit is preferably of integrated circuit form. In operation a series of negative (See top waveform Fig.3) are applied to the terminal of rail 15. Each negative pulse recharges all the photodiodes via each MOST M1, to a predetermined reverse bias voltage and, on removing the pulse, the potential on each diode rises independently of the other diodes in the array as charge is lost via reverse bias leakage current (See bottom waveform Fig.3), each amplifying MOST M2 isolating each photo-diode. The rate of discharge depending upon the degree of illumination of the photo-diode concerned. All the outputs of the amplifying MOST's are fed to the output rail 14 which has a resistance R1 Fig. 2 (not shown) connected between it and earth and the final output potential appearing across R1 is determined by the diode which has undergone the least illumination. In a further embodiment Fig. 4 (not shown) the input and output rails are combined. In another embodiment Fig. 6 (not shown) an additional photo-sensitive element is added to the array of circuits, and it is connected in a circuit similar to Fig.1. The additional photosensitive element is physically located in the array of photo-diodes Fig. 7 (not shown) so as to provide an output representative of the mean illumination of the photo-diodes and this output may then be compared with the main output from the diodes 11.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4061170 | 1970-08-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1345698A true GB1345698A (en) | 1974-01-30 |
Family
ID=10415749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4061170A Expired GB1345698A (en) | 1970-08-24 | 1970-08-24 | Photosensitive detecotrs |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1345698A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0046396A1 (en) * | 1980-08-20 | 1982-02-24 | Hitachi, Ltd. | Solid state image pickup device |
| GB2144265A (en) * | 1983-07-28 | 1985-02-27 | Mitsubishi Electric Corp | Solid-state image sensor |
-
1970
- 1970-08-24 GB GB4061170A patent/GB1345698A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0046396A1 (en) * | 1980-08-20 | 1982-02-24 | Hitachi, Ltd. | Solid state image pickup device |
| GB2144265A (en) * | 1983-07-28 | 1985-02-27 | Mitsubishi Electric Corp | Solid-state image sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6541752B2 (en) | Monolithic circuit of active quenching and active reset for avalanche photodiodes | |
| US4145721A (en) | Photosensitive self scan array with noise reduction | |
| GB1240137A (en) | Current stabilizing electrical circuit | |
| GB1464391A (en) | Charge coupled device exposure control | |
| GB1384594A (en) | Solid-state electronic relay | |
| JPS6171658A (en) | Substrate bias generating circuit | |
| GB1370934A (en) | Electrical delay devices | |
| GB1153259A (en) | Improvements in Storage Mode Photodetector with Electronic Shutter Action | |
| US4023048A (en) | Self-scanning photo-sensitive circuits | |
| US3581226A (en) | Differential amplifier circuit using field effect transistors | |
| US2851220A (en) | Transistor counting circuit | |
| GB1345698A (en) | Photosensitive detecotrs | |
| IE33068B1 (en) | Monolithic integrated circuit | |
| GB1204743A (en) | Integrated circuit amplifier | |
| US3397325A (en) | Sensor array coupling circuits | |
| GB1407246A (en) | High voltage switching systems | |
| GB1295525A (en) | ||
| GB1468716A (en) | Charge preamplifier | |
| US3099802A (en) | D.c. coupled amplifier using complementary transistors | |
| US2955265A (en) | Signal wave-form converter | |
| US3548219A (en) | Semiconductor pulse amplifier | |
| US4081793A (en) | Device for reading out the charge condition of a phototransistor | |
| GB748546A (en) | Electrical calculating circuits employing transistors | |
| GB1326560A (en) | Signal transition-responsive circuits | |
| GB808331A (en) | Transistor driver circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |