GB1343331A - Method of growing an epitaxial layer of grou iii-v compound semiconductor from the vapour phase - Google Patents

Abstract

1343331 Group III-V compounds HITACHI Ltd 19 April 1971 [30 March 1970] 25590/71 Heading C1A An epitaxial layer of Group III-V semiconductors is grown by (i) passing a gaseous mixture of (a) nitrogen or a mixture thereof with a minor proportion of an inert diatomic gas having an isobaric specific heat not substantially dissimilar from that of nitrogen (b) Group V element or a gaseous compound thereof, and if (b) does not contain chlorine, (c) chlorine or a gaseous compound containing chlorine over the Group III element to produce in situ a chloride of the Group III element and thence by reaction with the Group V element or compound thereof to produce the Group III-V semi-conductor, (ii) carrying the resulting Group III-V semiconductor in the component (a) gas into contact with a silicon or germanium or Group III-V semi-conductor substrates and (iii) growing an epitaxial layer of the Group III-V semi-conductor formed in (i) on the substrate. The Group III element is gallium or indium and the Group V element phosphorus, arsenic or antimony. In Example 1, AsCl 3 and N 2 are passed over Ga, the resulting gaseous mixture reacting a GaAs substrate. In Example 2, HClAsH 3 , PH 3 , N 3 together with a minute amount of H 2 S are passed over the Ga. The vapour may also contain Zn. In Example 3, HCl, SbH 3 , AsH 3 , N 2 together with a minute amount of TeH 2 and passed over In, the resulting gaseous mixture reaching an InAs substrate.