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GB1234665A - - Google Patents

Info

Publication number
GB1234665A
GB1234665A GB1234665DA GB1234665A GB 1234665 A GB1234665 A GB 1234665A GB 1234665D A GB1234665D A GB 1234665DA GB 1234665 A GB1234665 A GB 1234665A
Authority
GB
United Kingdom
Prior art keywords
july
anodizing
wafer
silicon nitride
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1234665A publication Critical patent/GB1234665A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H10P14/6324—
    • H10P14/6304—
    • H10P14/69215—
    • H10P50/282—
    • H10P50/283—
    • H10P95/00—
    • H10W74/43—
    • H10P14/69433—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

1,234,665. Anodizing silicon nitride. SIEMENS A.G. July 5, 1968 [July 7, 1967], No.32113/68. Heading C7B. [Also in Division H1 A silicon nitride layer 2 on a silicon wafer 1 is masked by means of a layer of photo-varnish 3 and the exposed area anodized to convert it to silicon dioxide which is then removed by etching in dilute HF. During the anodizing steps the wafer is held against an electrode 4 by means of suction. The electrolyte may be a non-aqueous tetrahydrofurfuryl alcohol solution containing ammonium nitrate, or may be glycol borate.
GB1234665D 1967-05-07 1968-07-05 Expired GB1234665A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1967S0110710 DE1644012B2 (en) 1967-05-07 1967-05-07 METHOD OF DIFFUSING DOPANT FROM THE GAS PHASE INTO A SEMICONDUCTOR SURFACE LOCALLY MASKED WITH A SILICON NITRIDE LAYER

Publications (1)

Publication Number Publication Date
GB1234665A true GB1234665A (en) 1971-06-09

Family

ID=7530433

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1234665D Expired GB1234665A (en) 1967-05-07 1968-07-05

Country Status (7)

Country Link
AT (1) AT292786B (en)
CH (1) CH484700A (en)
DE (1) DE1644012B2 (en)
FR (1) FR1573470A (en)
GB (1) GB1234665A (en)
NL (1) NL6809330A (en)
SE (1) SE337361B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006706A1 (en) * 1978-06-14 1980-01-09 Fujitsu Limited Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
DE102015102454A1 (en) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers and environmental sensor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0154670B1 (en) * 1978-06-14 1991-05-08 Fujitsu Limited Process for producing a semiconductor device having insulating film
JPS5621372A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
FR2675824B1 (en) * 1991-04-26 1994-02-04 Alice Izrael PROCESS FOR TREATING THE ENGRAVED SURFACE OF A SEMICONDUCTOR OR SEMI-INSULATING BODY, INTEGRATED CIRCUITS OBTAINED ACCORDING TO SUCH A PROCESS AND ANODIC OXIDATION APPARATUS FOR CARRYING OUT SUCH A PROCESS.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006706A1 (en) * 1978-06-14 1980-01-09 Fujitsu Limited Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
DE102015102454A1 (en) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers and environmental sensor
US10566210B2 (en) 2015-02-20 2020-02-18 Osram Opto Semiconductors Gmbh Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor
US10872783B2 (en) 2015-02-20 2020-12-22 Osram Oled Gmbh Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

Also Published As

Publication number Publication date
SE337361B (en) 1971-08-09
DE1644012B2 (en) 1976-08-12
AT292786B (en) 1971-08-15
DE1644012A1 (en) 1970-09-24
NL6809330A (en) 1969-01-09
CH484700A (en) 1970-01-31
FR1573470A (en) 1969-07-04

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee